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Amphenol Piher MSX360-1A-C0004-ERA360-05K MINIATURE HALL-EFFECT ROTARY POS
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DigiKey	MSX360-1A-C0004-ERA360-05K	Bulk	100		1	1 $22.85 10 $22.85 100 $15.8017 1000 $14.91788 10000 $14.91788	Buy Now
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Amphenol Piher MSX360-1A-C0022-ERA090-05K MINIATURE HALL-EFFECT ROTARY POS
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Amphenol Piher PSC360G2-F-1A-C0037-ERA045-05K HALL-EFFECT END-OF-SHAFT ROTARY
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Newark	PSC360G2-F-1A-C0037-ERA045-05K	Bulk	12		1	1 $53.17 10 $44 100 $40.33 1000 $39.72 10000 $39.72	Buy Now
Amphenol Piher PST360G2-1A-C0011-ERA090-REK HALL-EFFECT POSITION SENSOR (THO
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Amphenol Piher PST360G2-B-1A-C0011-ERA090-05K HALL-EFFECT THROUGH-SHAFT ROTARY
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1AC00 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UM0560 Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S Text: UM0560 User manual STM8L/S bootloader 1 Introduction This user manual contains the bootloader specifications for STM8L/S devices which contain a bootloader embedded in the system memory of the device the ROM . Through this firmware, the device memory can be erased and programmed using one of the standard	Original	PDF	UM0560 UM0560 STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
Ericsson TSR 491 628 Abstract: NT 1307c ericsson TSR 491 641 Ericsson nokia 1600 schematic diagram schematic diagram UPS active power 600 schematic diagram UPS 600 Power free marking code H02 schematic diagram UPS active power 400 tsi620-10gclv Text: Tsi620 RapidIO Switch / RapidIO-to-PCI Bridge User Manual Preliminary October 2007 80D7000_MA001_02 Titlepage Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi620, and Silicon Behind the Network, are trademarks of Tundra Semiconductor Corporation.	Original	PDF	Tsi620TM 80D7000 Tsi620, Tsi620 Ericsson TSR 491 628 NT 1307c ericsson TSR 491 641 Ericsson nokia 1600 schematic diagram schematic diagram UPS active power 600 schematic diagram UPS 600 Power free marking code H02 schematic diagram UPS active power 400 tsi620-10gclv
A039h Abstract: 3A400 Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.	Original	PDF	16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400
SA452 Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this	Original	PDF	Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
JS28F512M29 Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers	Original	PDF	M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Spansion S29GL512N11 Abstract: No abstract text available Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages	Original	PDF	S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11
SGA23 Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.	Original	PDF	16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23
asme SA388 Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ	Original	PDF	S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
FAA064 Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	PDF	S29GL-N S29GL256N, S29GL128N S29GL-N FAA064 SPANSION S29GL128 S29GL128 S29GL-P GL128N GL256N S29GL128N S29GL256N
ST3215 Abstract: No abstract text available Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by	Original	PDF	RL78/G13 16-Bit R01UH0146EJ0310 ST3215
120R Abstract: C8800 Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	PDF	Am29LV2562M 120R C8800
l256mh113 Abstract: L256ML123R Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	PDF	Am29LV256M l256mh113 L256ML123R
Untitled Abstract: No abstract text available Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,	Original	PDF	S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N,
BCM 4709 Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841 Text: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアルハードウェア編 16 ビット・シングルチップ・マイクロコントローラ本資料に記載の全ての情報は本資料発行時点のものでありルネサスエレクトロニクスは、	Original	PDF	78K0R/Fx3 78K0R/FB3: PD78F1804 78F1805 78F1806 78F1807 78F1804 BCM 4709 78F1830 78F1834 78f1835 78f1845 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841

L256MH113R Abstract: L256ML113R Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG	Original	PDF	Am29LV256M L256MH113R L256ML113R
Untitled Abstract: No abstract text available Text: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	PDF	S29NS-P S29NS512P, S29NS256P, S29NS128P
a22t Abstract: S19G S29GL-N Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications	Original	PDF	S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G
S29GL-N Abstract: 1E300 Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this	Original	PDF	S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300
7be0 Abstract: No abstract text available Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers	Original	PDF	M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0
s29gl032m10tair Abstract: No abstract text available Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics	Original	PDF	S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte BGA-80P-M02 s29gl032m10tair
UM0560 Abstract: stm8s family 177FFh STM8S105x6 EEPROM EXAMPLE STM8s Text: UM0560 User manual STM8S bootloader user manual 1 Introduction This user manual contains the bootloader specifications for STM8S devices which contain a bootloader embedded in the system memory of the device the ROM memory . Through this firmware, the device memory can be erased and programmed using one of the standard	Original	PDF	UM0560 UM0560 stm8s family 177FFh STM8S105x6 EEPROM EXAMPLE STM8s
S70GL01GN00 Abstract: S29GL01GP S29GL512N Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP	Original	PDF	S70GL01GN00 S70GL01GN S29GL01GP S29GL01GP S29GL512N
pdl128g70 Abstract: SA90 1D400 Text: ADVANCE INFORMATION Am29PDL128G 128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 128Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4	Original	PDF	Am29PDL128G 16-Bit/4 32-Bit) 128Mbit 16-bit) Am29F Am29LV LAB080 pdl128g70 SA90 1D400
SA293 Abstract: SA273 988000 Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations	Original	PDF	Am29LV256M 16-Bit/32 16-word/32-byte 56-pi SA293 SA273 988000

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Amphenol Piher MSX360-1A-C0004-ERA360-05K

Amphenol Piher MSX360-1A-C0022-ERA090-05K

Amphenol Piher PSC360G2-F-1A-C0037-ERA045-05K

Amphenol Piher PST360G2-1A-C0011-ERA090-REK

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1AC00 Datasheets Context Search

UM0560

Ericsson TSR 491 628

A039h

SA452

JS28F512M29

Spansion S29GL512N11

SGA23

asme SA388

FAA064

ST3215

120R

l256mh113

Untitled

BCM 4709

L256MH113R

Untitled

a22t

S29GL-N

7be0

s29gl032m10tair

UM0560

S70GL01GN00

pdl128g70

SA293