1SS373 Search Results

1SS373

Contextual Info: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

marking code RB

Abstract: rb marking code 1SS373WT
Contextual Info: 1SS373WT SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 RB Top View Marking Code: "RB" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

Contextual Info: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

diode sy 180 10

Abstract: 1ss373
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol

1ss373

Contextual Info: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

diode sy 200

Abstract: 1ss373 diode sy 180 10
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High speed switching 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

Contextual Info: TOSHIBA 1SS373 TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE HIGH SPEED SWITCHING APPLICATION • Small Package • Low Forward Voltage : Vf = 0.23V TYP. @Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT Vn'llncr#» VRM 15 V Reverse Voltage

diode sy

Abstract: diode sy 160 diode sy 200 1ss373 diodes SY 200
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High speed switching 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

Contextual Info: 1SS373 T O S H IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE • S m a ll Package • Low Forward Voltage : V p = 0.23V TYP. @ Ip U n it in mm = 5mA M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse

Contextual Info: 1SS373 T O S H IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE • S m a ll Package • Low Forward Voltage : V p = 0.23V TYP. @ Ip U n it in mm = 5mA M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse

1ss373

Contextual Info: 1SS373 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm Small Package Low Forward Voltage : Vjn = 0.23V TYP. @Ijr = 5mA 0.8 ±0.1 MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC

diode sy 180 10

Abstract: 1ss373 diode sy
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol

Contextual Info: Product specification 1SS373 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low forward voltage :VF = 0.23V TYP. IF = 5mA +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25 Characteristic

"MARKING CODE N"

Abstract: MARKING CODE N
Contextual Info: 1SS373WT SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 N Top View Marking Code: "N" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value

maxim package marking

Abstract: maxim package "marking" 1ss373
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS373 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low forward voltage :VF = 0.23V TYP. IF = 5mA +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25

diode sy 180 10

Abstract: 1ss373
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16