1SS29 Search Results

Contextual Info: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •

1SS294

Contextual Info: 1SS294 SILICON EPITAXIAL PLANAR TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Unit in mm . Low Forward Voltage V f =0 .54V Typ. . Low Reverse Current lR=5MA(Max.) . Small Package SC-59 +0.5 2.5 -0.3 +0.25 1.5-0.15 1 0.3 - MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

Contextual Info: Product specification 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF 3 = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5

ss295

Contextual Info: 1SS295 TO SHIBA TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr= 10mV Max. : ACT = 0.1pF(Max.) M A X IM U M RATINGS (Ta = 25°C)

ss295

Abstract: 1SS295 SS29
Contextual Info: TOSHIBA 1SS295 TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) E +0.5 2.5-0.3

Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic

Contextual Info: Diode, switching, leaded 1SS290 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Dimensions U n its: mm CATHODE BAND «¿0.4±0.l Features • available in DO-34 package • part marking, see following table

1ss212

Abstract: 1SS291
Contextual Info: ^ K /D io d es M H /D is c o n tin u e d Types List • JjIanS— Discontinued Types List ftH p “p Replacem ent ft# p Dp Replacement Type Replacement Type 1SS212 1SS254 1SS216 1SS135 TZ Series MTZ Series 1SS213 1SS136 1SS217 1SS290 DAP211 DAP208 1SS253 1SS214

NMR14

Abstract: BLM21PG600SN1 TANTAL 16V Tantal 22uF/16V B3FS-1002 sw dip-4 DPC 31 SW-DIP-4 1SS294 B3F-1002
Contextual Info: 5 4 3 2 1 D D SCL 3.3V 3.3V 3 2 1 JP1 XJ8C-0311 DPC R1 GPIO7 SW5 R2 10k R3 10k U2 10k B3FS-1002 8 7 6 5 GPIO6 SW4 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 3.3V M24C32-WBN6 B3FS-1002 CP1 3.3V 3.3V D1 1SS294 0.1uF R4 1.5k RESET GPIO5 SW1 B3FS-1002 R8 R6 R7 1K R9

1SS294

Contextual Info: 1SS294 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS294 ○ 低電圧高速スイッチング用 単位: mm : SC-59 : VF 3 = 0.54V (標準) : IR = 5 A (最大) z 外形が小さい。 z 順電圧が小さい。 z 逆電流が小さい。

1SS295

Contextual Info: 1SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm UHF B A N D M IXER APPLICATIONS. • • • + 0 .5 2 .5 - 0 .3 Small Package Small Delta Forward Voltage Small Delta Total Capacitance + 0 .2 5 1.5 - 0 . 15^ : AVp>= lOmV Max. : ACx = 0.1pF (Max.)

Contextual Info: SILICO N EP IT A X IA L S C H O T T K Y B A R R IE R T Y P E DIODE -1SS295 UHF B A N D M IX E R A PPLIC A TIO N S. • • • U n it in m m Small Package Small Delta Forward Voltage Small Delta Total Capacitance : A V j'= lOmV Max. : ACx = 0.1pF (Max.) M A X IM U M R A T IN G S (Ta = 25°C)

Contextual Info: 1SS293 TO SHIBA TO SHIBA DIODE 1 SS293 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5fuA (Max.) Small Package 0.55M A X CTl 1.27 1.27

1SS293

Contextual Info: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS293 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse surrent : IR = 5 A (max) z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic

1SS294

Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse surrent : IR = 5 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)

1SS295

Contextual Info: 1SS295 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS295 ○ UHF バンド受信ミキサ用 • 単位: mm 小型パッケージです。 • 順電圧偏差が小さい。 • 端子間容量偏差が小さい。 : ΔCT = 0.1 pF 最大

1SS291

Abstract: 1SS292 ROHM 1SS292
Contextual Info: 1SS290/1SS291 /1SS292 $ ' ' i ^ — K /D iodes - r — 's+ A V t^ V S » ^ A>4 1SS290/1SS291 /1 SS292 Silicon Epitaxial Planar Low-Leakage Switching Mini-Diodes 1 'h f 7 ^ 7 DSiSJi A • Ü / D i m e n s i o n s ( U n it : m m ) • t i V — K / ' i > K f e g y / C a t h o d e B a n d C o lo r

1SS294

Contextual Info: TOSHIBA 1SS294 TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59

TOSHIBA DIODE

Abstract: 1SS294
Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic

TOSHIBA DIODE

Abstract: 1SS293
Contextual Info: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package Maximum Ratings (Ta = 25°°C) Characteristic Symbol

Contextual Info: 1SS294 TOSHIBA TOSHIBA DIODE 1SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. + 0.5 2 . 5 - 0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : I r = 5/¿A (Max.) Small Package : SC-5Ô + 0.25 1. 5 - 0.15

transistor XM

Abstract: marking 724 diode diode marking code xm sot-23 marking code 1SS294 Semtech
Contextual Info: 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low reverse current • Low forward voltage 3 1 Absolute Maximum Ratings Ta = 25 OC Parameter Marking Code: "XM" SOT-23 Plastic Package 2 Symbol Value Unit

Contextual Info: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low-Voltage High-Speed Switching z Low forward voltage: VF 3 = 0.54 V (typ.) z Low reverse current: IR = 5 A (max) Unit: mm z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: Product specification 1SS295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ÄVF = 10 mV Max 1 Small Delat total capacitance: ÄCT = 0.1pF(Max) 0.55 Small Delat forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1