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Catalog Datasheet	Type	Document Tags	PDF
RZ2731B45W Contextual Info: N AMER PHILIPS/DISCRETE GhE D • bbSBTBl □□1S531 b ■ X RZ2731B45W T - 3 3 - I 3 PULSED MICROWAVE POWER TRANSISTOR N P N silic o n planar e p ita x ia l m icrow ave pow er transistor, intended fo r use in a com m on-base class-C broadband pulse pow er a m p lifie r w ith a frequency range o f 2,7 to 3,1 G H z .	OCR Scan	1S531 RZ2731B45W RZ2731B45W	PDF
DIODE S4 29 Contextual Info: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be	OCR Scan		PDF

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RZ2731B45W

Contextual Info: N AMER PHILIPS/DISCRETE GhE D • bbSBTBl □□1S531 b ■ X RZ2731B45W T - 3 3 - I 3 PULSED MICROWAVE POWER TRANSISTOR N P N silic o n planar e p ita x ia l m icrow ave pow er transistor, intended fo r use in a com m on-base class-C broadband pulse pow er a m p lifie r w ith a frequency range o f 2,7 to 3,1 G H z .

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1S531 RZ2731B45W RZ2731B45W

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DIODE S4 29

Contextual Info: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be

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