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1rfz30 Abstract: 1RFU220 irfu110 IRFU121 irfu310 IRFU020 IRFU111 IRFU120 IRFU210 IRFU212 Text: - 266 - f ft A £ m € tt € Id Pd V Vd s Vg s or * /CH * /CH t Vdg K V IRFZ30 IRFZ32 1RFZ34 IR IR IR IR IR IR fR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR * + UPchiNc IRFU02O IRFUQ22 IRFUI10 IRFU111 IRFU120 IRFU121 ( RFU210	OCR Scan	PDF	IRFU020 T0-251AA 1RFU022 O-251AA RFU310 1RFU32Ã 1RFU411 IRFU420 IRFU901Ã IRFU9012 1rfz30 1RFU220 irfu110 IRFU121 irfu310 IRFU111 IRFU120 IRFU210 IRFU212
1rfz44 Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022 Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € ± € % Pd Id Ig s s Vg s th) Idss /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & typ (A) Id (A) Vg s (V) typ (S) (typ) (typ) (*typ) (max) (max) (max)	OCR Scan	PDF	IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5TO-220 IRL510 1rfz44 MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
1RFZ34 Abstract: STM TO-220 marking IRFZ34 IRFZ34 international Text: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements	OCR Scan	PDF	5S452 0Q1577Ö IRFZ34 O-220 S5452 1RFZ34 STM TO-220 marking IRFZ34 IRFZ34 international
IRF34N Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B Text: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss	OCR Scan	PDF	IRFZ34N O-220 a9246 IRF34N 1RFZ34N 1RFZ34 dioda rectifier V145M 100MS IRF1010 VIQR9246 dioda 12B
1RFZ46N Abstract: 1RFZ34N 1rf5305 1RFZ34 1rfbf20l Text: HEXFEl Power MOSFETs International IöR Rectifier *D >0 V BR DSS Port Number Droin-to-Source Breakdown Voltage (V) Continuous R R DS(on) Continuous PD Drain Current On-State Drain Current Max. Thermal Max. Power 100" Resistance Resistance Dissipation	OCR Scan	PDF	1RFZ34NL 1RFZ46NL 1RFBF20L 1RF5305L O-262 O-220AB O-220 1RFZ46N 1RFZ34N 1rf5305 1RFZ34
1rfz24n Abstract: 1RFZ34N 1RFBE30 IRF3205 IR 1rfz44 1RFZ44F 1RFZ24 IRF3205 1RFZ34 IR 37 0023 Text: HEXFEl Power MOSFETs International IQ R Rectifier Part Number v BR 0SS Drain-to-Source Breakdown VoNage (V) ^DS(on) On-State Resistance in •d ■d Continuous R PD Continuous Drain Current Max. Thermal Max. Power Drain Current 100e Resistance Dissipation	OCR Scan	PDF	1RFZ24N 1RFZ34N IRF3205 1RFZ44F, -220AB 9I47-7 904X2 IRF2807 IRF520N IRF530N 1RFBE30 IRF3205 IR 1rfz44 1RFZ44F 1RFZ24 1RFZ34 IR 37 0023
1RFZ34 Abstract: SMD IRFZ34 AN-994 IRFZ34 IRFZ34S SMD-220 Text: International ^¡Rectifier PD-9.509B IRFZ34 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d s s ~ 60V ^DS(on = 0 - 0 5 0 0 ID = 30A Description DATA	OCR Scan	PDF	IRFZ34 O-22Q O-220 1RFZ34 SMD IRFZ34 AN-994 IRFZ34S SMD-220
1RFZ34A Abstract: IRFZ344 1RFZ34 IRFZ34A Text: IRFZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BV0SS = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1 7 5 t Operating Temperature Lower Leakage Current : 10 m A M ax. @	OCR Scan	PDF	IRFZ34A 1RFZ34A 1RFZ34A IRFZ344 1RFZ34 IRFZ34A