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    1P503S Price and Stock

    Anaren Microwave 1P503SR

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    Bristol Electronics 1P503SR 14,432
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    Anaren Microwave 1P503S

    1700MHZ - 2000MHZ RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.25DB INSERTION LOSS-MAX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1P503S 15
    • 1 $4.95
    • 10 $2.475
    • 100 $2.475
    • 1000 $2.475
    • 10000 $2.475
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    1P503S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1P503S Anaren Hybrid Couplers 3 dB, 90° Original PDF

    1P503S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Model 1P503S Rev. B Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable


    Original     		PDF 1P503S 1P503S

    1P503S

    Abstract: ghz hybrid coupler
    Text: Model 1P503S Rev. B Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable


    Original     		PDF 1P503S 1P503S ghz hybrid coupler

    Untitled

    Abstract: No abstract text available
    Text: Model 1P503S Rev. C Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable


    Original     		PDF 1P503S 1P503S

    1P503S

    Abstract: ghz hybrid coupler
    Text: Model 1P503S Rev. A Hybrid Couplers 3 dB, 90°° Description The 1P503S Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503S is designed for balanced amplifiers, variable


    Original     		PDF 1P503S 1P503S ghz hybrid coupler

    MRF8P20140WH/HS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN AFT20P140-4WNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT

    OP6180

    Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118
    Text: AN10921 BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier Rev. 01 — 16 July 2010 Application note Document information Info Content Keywords BLF7G20LS-200, Doherty, RF, LDMOS Abstract This application note describes the design and performance of a power


    Original     		PDF AN10921 BLF7G20LS-200 BLF7G20LS-200, OP6180 OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118

    GRM32ER7YA106K88L

    Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E
    Text: AN10847 Doherty RF performance analysis using the BLF6G20-230PRN Rev. 01 — 29 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty amplifiers, main amplifier, peak amplifier, AB amplifiers, RF performance, Digital PreDistortion DPD , base station


    Original     		PDF AN10847 BLF6G20-230PRN BLF6G20-230PRN, AN10847 GRM32ER7YA106K88L 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E

    MRF8P20140WHS

    Abstract: mrf8p20140 J473 MRF8P20140W
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W

    C5750X7S2A106KT

    Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN AFT20P140-4WNR3 AFT20P140--4WN C5750X7S2A106KT AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501

    1P503

    Abstract: 1P503S EIA-481-2 ghz hybrid coupler
    Text: Model 1P503 Rev. B Hybrid Couplers 3 dB, 90° Description The 1P503 Pico Xinger is a low profile, miniature 3dB hybrid coupler in an easy to use surface mount package designed for DCS and PCS applications. The 1P503 is designed for balanced amplifiers, variable


    Original     		PDF 1P503 1P503 1P503) 1P503* EIA-481-2. 1P503S EIA-481-2 ghz hybrid coupler

    Untitled

    Abstract: No abstract text available
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


    Original     		PDF AN10944 BLF7G20LS-200 BLF7G20LS-200 1J503S 1P503S

    MRF8P20100HR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN 1880-2025dated AFT20P140-4WNR3 AFT20P140-4WGNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN AFT20P140-4WNR3 AFT20P140-4WGNR3 1/2014Semiconductor,