1N6532 equivalent
Abstract: 1N6528 M100UFG JX6528 1n6535 jantxv RM117 1N6531 1N6535 1N6530 1N6532
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. INCH-POUND MIL-PRF-19500/577C 6 October 2006 SUPERSEDING MIL-PRF-19500/577B 19 February 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,
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MIL-PRF-19500/577C
MIL-PRF-19500/577B
1N6528
1N6535,
MIL-PRF-19500.
1N6532 equivalent
M100UFG
JX6528
1n6535 jantxv
RM117
1N6531
1N6535
1N6530
1N6532
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE RECTIFIERS 70nS RECOVERY AXIAL LEADED HERMETICALLY SEALED in. mm 1N6532 1N6533 1N6534 1N6535 VRWM= 4000 -10000V l F = 25m A -50m A T rr = 70nS JANTX JANTXV 1.30(33.02) ' 1.00(25.4) A ,095±.035 (2.41 ±.89) •020±.003 (.50±.08) 1N6532 1N6533
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1N6532
1N6533
1N6534
1N6535
-10000V
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1N6532
Abstract: 1N6533 1n6535 jantxv 1N6535 1N6534 t514a 100-C T514
Text: b3E D • ^14054 □□00345 7flfl * V n i HIGH VOLTAGE RECTIFIERS 70nS RECOVERY AXIAL LEADED HERMETICALLY SEALED 1N6532 1N6533 1N6534 1N6535 JANTX JANTXV V RWM ~ 4000 -10000V I F = 25mA - 50mA T rr = 70nS VOLTAGE MULTIPLIERS INC in. mm 1.30(33.02)_ 1.00(25.4)
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0DQ0345
1N6532
1N6533
1N6534
1N6535
-10000V
1N6533
1n6535 jantxv
1N6535
t514a
100-C
T514
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high temperature reverse bias
Abstract: METHOD-1032 1N6535 JAN
Text: SCREENING GUIDE FOR HIGH RELIABILITY APPLICATIONS The following screening guide for discretes and assemblies is suggested for high reliability applications, and can be adjusted or modified to suit your requirements. This is taken from Table IV in MIL-PRF-19500, JANTX screening.
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MIL-PRF-19500,
MIL-STD-750
MIL-PRF-19500
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
high temperature reverse bias
METHOD-1032
1N6535 JAN
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X200SG
Abstract: Z100SG 1N6521U
Text: QUICK SELECTION GUIDE Part No. Vrwm Volts l°(A) (55°C) Trr (ns) DISCRETE RECTIFIER DIODE 1N5415 50 5.000 150 150 1N5416 100 5.000 1N5615 200 1.500 150 1N5614 200 1.500 2000 1N5417 200 5.000 150 1N5550 200 5.000 2000 1N5617 1.500 150 400 1N5616 400 1.500 2000
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M50FF3
M50FF5
1N6533
M50UFG
M50FG
M50SG
X50FF3
X50FF5
1N6525
X50UFG
X200SG
Z100SG
1N6521U
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1N6528
Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117
Text: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart
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MIL-S-19500/577
1N6528
1N6535
MIL-S-19500.
RA642
RA645
RM121
RM131
M60FG
M60UFG
M25UFG
RA641
58A2
RA644
11n65
RM109
M50FG
RM117
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1N6512
Abstract: No abstract text available
Text: HIGH VOLTAGE RECTIFIERS 70ns Recovery • Axial Leaded • Hermetic • JANTX • JANTXV E LE C TR IC AL C H A R A C TE R IS TIC S AND M AXIM UM RATING S Part Number Working Reverse Voltage Average Rectified Current Vrwm (1) (lo) Volts Reverse Current @ Vrwm
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1N6512
1N6513
1N6514
1N6515
1N6516
1N6517
1N6518
1N6519
1N6520
1N6521
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