1N6137US Search Results

1N6137US

Contextual Info: Transient Voltage Suppressor SM PART NUMBER: 1N6137US PACKAGE STYLE:MELFTVS CONFIGURATION:Transient Voltage Suppressor SM -All ratings are @ Tc = 25 °C unless otherwise specified. MAXIMUM RATINGS / ELECTRICAL CHARACTERISTICS SYMBOL VALUE UNITS MIN BREAKDOWN VOLTAGE

Contextual Info: Square ended SMD 1N6102US,&A thru 1N6137US.&A 500 watt Voidless TZS Hard GlassTungsten MELF "B" Package Applications Symmetrical, bidirectional Transient voltage protection against static (ESD), power and lightening. The hard glass voidless construction is especially suited for the hostile

TVS diode MELF

Abstract: 1N6133 1n6121 1N6102 1N6102A 1N6102AUS 1N6102US 1N6137 1N6137A 1N6137AUS
Contextual Info: tSENSITRON SEMICONDUCTOR AXIAL LEAD / MELF, TRANSIENT VOLTAGE SUPPRESSOR BI- DIRECTIONAL DIODES Peak Pulse Power 500 W Unidirectional Chip AXIAL 1N6102 - 1N6137 1N6102A - 1N6137A 1N6461 – 1N6468 1C6102 - 1C6137 1C6102A - 1C6137A 1C6461 – 1C6468 MELF 1N6102US - 1N6137US

1N6121A JANTX

Abstract: 1N6122A JANTX 1N6109 JANS 1N6120 1n6110 1N6103AUS 1N6133 1n6107 jans 1N6102US 1N6137
Contextual Info: 1N6102US thru 1N6137US 1N6103AUS thru 1N6137AUS 500W Bipolar Transient Voltage Suppressor Surface Mount US POWER DISCRETES Description Features Quick reference data Low dynamic impedance Hermetically sealed non-cavity construction 500 watt peak pulse power

PSKE

Abstract: JANTXV1N6137 EM 189 PSKE160A ha+13627
Contextual Info: Transient Voltage Suppressors Mcmsemi I Part Number Microsemi Division K i s f B f 'P f p . Scottsdale Scottsdale SA48CA Scottsdale SA5.0 Scottsdale SMAJ150 SMAJ150A Scottsdale Santa Ana 1N6137 Santa Ana 1N6137US Santa Ana JAN1N6137 1N6137US Santa Ana

1N6133

Abstract: 1N6102 1N6102US 1N6103 1N6103AUS 1N6137 1N6137AUS 1N6137US 1N6122A JANTX 1N6112 JANTX
Contextual Info: 1N6102US thru 1N6137US 1N6103AUS thru 1N6137AUS 500W Bipolar Transient Voltage Suppressor Surface Mount US POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ VBR MIN = 6.12 -180V VRWM = 5.2 - 152V VC (max) = 11 - 273V I(BR) 1N6102 - 1N6137 = 5mA - 175mA

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

1N6122A JANTX

Abstract: 93/bbc 598 479 DIODE 1N6116A 1N6160A 1N6173US J610X 1N6138 1N6111 1N6162A JANTX 1N6102A
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 September 2009. INCH-POUND MIL-PRF-19500/516E 5 June 2009 SUPERSEDING MIL-PRF-19500/516D 23 July 1999 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE

diode 1n6

Abstract: 1N6102 1N6102US 1N6103AUS 1N6118AUS 1N6137AUS 1N6138US 1N6173A 1N6173AUS Microsemi micronote series 701
Contextual Info: 1N6102US thru 1N6137AUS and 1N6138US thru 1N6173AUS Voidless-Hermetically-Sealed Surface Mount Bidirectional Transient Suppressors SCOTTSDALE DIVISION APPEARANCE This surface mount series of industry recognized voidless-hermeticallysealed Bidirectional Transient Voltage Suppressor TVS designs is

melfas

Abstract: 1N6650-1 1N5819UR-1 1N6650 1N5819-1 1N6138AUS
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC SILICON SCHOTTKY BARRIER DIODES SC H O T T K Y BARRIER DIO DES TYPE NUMBERS PEAK INVERSE VOLTAGE MAX AVG. DC OUTPUT CURRENT i Volts MAXIMUM REVERSE CURRENT @PIV Tj 25°C mA Amps 100CC

Contextual Info: 1N6103A – 1N6137A Available on commercial versions Voidless Hermetically Sealed Bidirectional Transient Voltage Suppressors Qualified to MIL-PRF-19500/516 Qualified Levels: JAN, JANTX, JANTXV and JANS* DESCRIPTION This series of industry recognized voidless, hermetically sealed bidirectional Transient Voltage

he804

Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
Contextual Info: Edition 1.2. Space- & Military Level Components 2008/08 2 Introduction and Table of Contents If you are working on a program for military, industrial and/or space equipments & need product with extended temperature performance, MSA Components can help. To support the customer needs

2730A

Abstract: DSAIH0002550
Contextual Info: Square ended SMD ^ r . «1ft 500 watt Voidless TZS) ' ' 1 N6102US.&A Hard GlassTungsten MELF "B" Package 1 N6137US.&A lU . Applications . ’.|J Sym m etrical, bidirectional Transient voltage protection against static (ESD )3 power and lightening. The hard glass voidless construction is especially suited for the hostile

1N6103 JANTX

Abstract: 1N6172AUS 1N6103 1N6103AUS 1N6103US 1N6137AUS 1N6138US 1N6139US 1N6173A 1N6173AUS
Contextual Info: 1N6103US thru 1N6137AUS and 1N6139US thru 1N6173AUS Voidless-Hermetically-Sealed Surface Mount Bidirectional Transient Suppressors SCOTTSDALE DIVISION APPEARANCE This surface mount series of industry recognized voidless-hermeticallysealed Bidirectional Transient Voltage Suppressor TVS designs is

1N6133

Abstract: spb25 jan 1N6113US 1N4245 JTX 1N6650-1 mil-prf-19500/1N5553US
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision MIL-PRF-19500 QUALIFIED PRODUCTS LIST Part Number 1N3611 1N3612 1N3613 1N3614 1N3957 1N4245 1N4246 1N4247 1N4248 1N4249 1N4942 1N4944 1N4946 1N4947 1N4948 1N5186 1N5187 1N5188 1N5190 1N5415 1N5415US

1n6127aus

Abstract: 1N6160AUS 1N6149AUS 1N6172AUS 1N6102 1N6102US 1N6103AUS 1N6118AUS 1N6138AUS 1N6138US
Contextual Info: 1N6102US thru 1N6137AUS and 1N6138US thru 1N6173AUS Voidless-Hermetically-Sealed Surface Mount Bidirectional Transient Suppressors SCOTTSDALE DIVISION APPEARANCE This surface mount series of industry recognized voidless-hermeticallysealed Bidirectional Transient Voltage Suppressor TVS designs is

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/516D 23 July 1999 SUPERSEDING MIL-S-19500/516C 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE