1N582X Search Results

1N5821

Abstract: DB-113
Contextual Info: 1N5821 THRU 1N5822 3.0AMP. Schottky Barrier Rectifier VOLTAGE:30 TO 40V CURRENT:3.0A AXIAL LEAD DO-201AD Specification Features: Case: Epoxy, Molded DEVICE MARKING DIAGRAM Weight:1.2Gram Approximately 1N582X KEL High current capability,Low Forward Voltage Drop

1N5820

Abstract: 1N5821 1N5822 diode do-201
Contextual Info: Spec. No. : C330LA Issued Date : 2003.04.16 Revised Date : Page No. : 1/3 CYStech Electronics Corp. 3.0Amp. Axial Leaded Schottky Barrier Diodes 1N582XLA Series Features • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

Part Marking STMicroelectronics

Abstract: ST Low Forward Voltage Schottky Diode DIODE 1N5822 1N5821 1N5822 data sheet forward converter LOW DROP POWER SCHOTTKY RECTIFIER 1N5820 1N5822
Contextual Info: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD

1N5821

Abstract: 1N5820 1N5822
Contextual Info: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP

1N5821

Abstract: 1N5820 1N5822 1N5822 st
Contextual Info: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD

N5821

Abstract: 1N5821 diode do-201
Contextual Info: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I f a v 3A V rrm 40 V Vf 150°C Tj (max) 0.475 V FEATURES AND BENEFITS • ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP

Contextual Info: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS 3A I f a v V rrm 40 V Tj 150°C Vf (max) 0.475 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP

5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5821

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822 PACKAGE

Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5820

Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5820 thru 1N5822 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Contextual Info: 1N5820 - 1N5822 3.0AMPS. Schottky Barrier Rectifiers DO-201AD Features ­ Low power loss, high efficiency ­ High current capability, Low VF ­ High reliability ­ High surge current capability ­ Exitaxial construction ­ Guard-ring for transient protection

Contextual Info: 1N5820 thru 1N5822 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

half bridge LLC inverter

Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822 data sheet

Abstract: 1N5820 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 3.0 AMP. Schottky Barrier Rectifier FEATURES • • • • DO-201AD Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protection applications

Contextual Info: 1N5820 thru 1N5822 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

1N5821-1

Contextual Info: 1N5820 - 1N5822 CREAT BY ART 3.0AMPS. Schottky Barrier Rectifiers DO-201AD Features — Low power loss, high efficiency — High current capability, Low VF — High reliability — High surge current capability — Exitaxial construction — Guard-ring for transient protection

DIODE 1N5822

Abstract: 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E
Contextual Info: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

Contextual Info: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability

Contextual Info: 1N5820 – 1N5822 3.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip     Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency

1N5822RL

Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

Contextual Info: 1N5820 - 1N5822 CREAT BY ART Pb 3.0AMPS. Schottky Barrier Rectifiers DO-201AD RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, Low VF — High reliability — High surge current capability — Exitaxial construction — Guard-ring for transient protection