1N17 Search Results

1N17

Abstract: 1N18 1N19
Contextual Info: 1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere FEATURES R-1 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Guardring for overvoltage protection

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • • 1N17 THRU 1N19 1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts High Current Capability Low Power loss High Efficiency

1N17

Abstract: 1N18 1N19
Contextual Info: 1N17 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N19 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching

1N1733

Abstract: 1N173
Contextual Info: 1N1733 Silicon Rectifier 19.90 Diodes Silicon Rectifiers General-Purpose American Mic. Page 1 of 1 Enter Your Part # Home Part Number: 1N1733 Online Store 1N1733 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

1N17

Abstract: 1N19 CJ110
Contextual Info: 1N17 thru 1N19 Reverse Voltage 20 to 40 Volts Schottky Barrier Rectifiers Forward Current 1.0 Ampere Features ‹ Low power loss, high efficiency ‹ Low leakage ‹ Low forward voltage ‹ High current capability ‹ High speed switching ‹ High surge capabitity

Contextual Info: MCC TM Micro Commercial Components 1N17 THRU 1N19
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • High Current Capability Low Power loss High Efficiency

1N1710

Abstract: 1N17 1N18 1N19
Contextual Info: 1N17 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N19 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching

Contextual Info: 1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High reliability

1N18

Abstract: 1N17 1N19
Contextual Info: 1N17 THRU 1N19 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • • 1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts High Current Capability Low Power loss High Efficiency Low Forward Voltage Drop

TH3001

Abstract: IN19 1N17 1N19 IN17 IN18
Contextual Info: BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER 1N17- - - 1N19 VOLTAGE RANGE: 20 - 40 V CURRENT: 1.0 A FEATURES R-1 Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free

1N1742A

Contextual Info: MIL- S-19500/298 USAF AMENDMENT 3 24July ) 68 SUPERSEDÜJÔ AMENDMENT 2 13 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N1742A This amendment forms a part oi Military Specif teat ion MIL-fe-Tgg&6/2B8 (USAF), toted 21 O ctSer 1964,~

IN1733A

Abstract: 1N1733A IN1733 1N173A 1N1731A IN1731A 1N1734A I960 MIL-STD-750 METHOD 2036 conditions E ML-733
Contextual Info: MIL-S-19500/K2A 13 May 196/« SUPERSEDING MIL-S-19500/142 SigC 20 September I960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, SILICON, HIGH VOLTAGE RECTIFIER TYPES 1N1731A, 1N1733A, AND 1N173AA Tliis specification has been approved by the Department of Defense and is man­

MC 4011 B

Abstract: 1N1733A 1N1734A 1N1731A mc 4011 1N1734
Contextual Info: MIL- S -19500/142A AMENDMENT 3 1 / 20 A ugust 1968 SUPERSEDING AMENDMENT 2 21 D ecem ber 1966 MILITARY SPECIFICATION SEMICONDUCTOR D EVICES, SILICON, HIGH VOLTAGE RECTIFIER TYPES 1N1731A, 1N1733A, AND 1N1734A This amendment form s a p a rt of M ilitary Specification MIL-S-19500/142A,

1N17

Abstract: 1N18 1N19
Contextual Info: 1N17 ~ 1N19 SCHOTTKY BARRIER RECTIFIERS Reverse Voltage – 20 to 40 Volts Forward current – 1.0 Amperes R-1 Features • • • • • Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability low forward voltage drop

IN4773

Abstract: IN2976 IN4773A IN536 1N29B IN4772 1H28 IN2822 IN2621 1N137
Contextual Info: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.

Contextual Info: 1N1787 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage47 @I(Z) (A) (Test Condition)15m Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.64 Temp Coef pp/10k Maximum Operating Temp (øC)175’ Package StyleDO-13

Contextual Info: 1N1735 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage6.2 @I(Z) (A) (Test Condition)7.5m Tolerance (%)5 P(D) Max. (W)200m Z(z) Max. (ê) Dyn. Imped.20 Temp Coef pp/10k80 Maximum Operating Temp (øC)150# Package StyleAxial-13

Contextual Info: 1N1785 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage39 @I(Z) (A) (Test Condition)15m Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.45 Temp Coef pp/10k Maximum Operating Temp (øC)175’ Package StyleDO-13

1N623A

Abstract: 1N623 silicon voltage reference diodes TN945 DO13 1n2169 1NB25A 1N2621A 1N428 1N2164A
Contextual Info: lomitronlcr discrete devices SEMICONDUCTORS Sem itronics C orp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Type Norn. Zener Dynamic Zener Voltage, Impedance, Current Vz volts Zz (ohms) lz (mA) 1N428 1N1735 6.2 6.2

Contextual Info: 1N17 thru 1N19 1.0 Amp. Schottky Barrier Rectifiers Voltage Range 20 to 40 Volts Forward Current 1.0 Ampere Features ‹ Low power loss, high efficiency ‹ Low leakage ‹ Low forward voltage ‹ High current capability ‹ High speed switching ‹ High surge capabitity

Contextual Info: 1N1779A General-Purpose Reference/Regulator Diode 13.73 Diodes Reference/Regulato. Page 1 of 1 Enter Your Part # Home Part Number: 1N1779A Online Store 1N1779A Diodes General-Purpose Reference/Regulator Diode Transistors Integrated Circuits Optoelectronics

1N1780

Contextual Info: 1N1780 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N1780 Availability Online Store

1N1731

Contextual Info: 1N1731 Silicon Rectifier 14.50 Diodes Silicon Rectifiers General-Purpose American Mic. Page 1 of 1 Enter Your Part # Home Part Number: 1N1731 Online Store 1N1731 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER 1N17- 1N19 VOLTAGE RANGE: 20 - 40 V CURRENT: 1.0 A FEATURES R-1 Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free