19MAY2006 Search Results

Contextual Info: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s Description P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b OOrder codes e t e l

Contextual Info: SN74AUP1T58 SINGLE-SUPPLY VOLTAGE-LEVEL TRANSLATOR WITH NINE CONFIGURABLE GATE LOGIC FUNCTIONS www.ti.com SCES612D – OCTOBER 2004 – REVISED JUNE 2006 FEATURES • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Single-Supply Voltage Translator

Contextual Info: SN74AUP1T58 SINGLE-SUPPLY VOLTAGE-LEVEL TRANSLATOR WITH NINE CONFIGURABLE GATE LOGIC FUNCTIONS www.ti.com SCES612C – OCTOBER 2004 – REVISED DECEMBER 2005 FEATURES • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages

Contextual Info: SN74AUP1T98 SINGLE-SUPPLY VOLTAGE-LEVEL TRANSLATOR WITH NINE CONFIGURABLE GATE LOGIC FUNCTIONS www.ti.com SCES614C – OCTOBER 2004 – REVISED JUNE 2006 FEATURES • • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages

marking b37a

Contextual Info: SO-8 single/dual OPA237 OPA2237 OPA4237 SSOP-16 quad SOT-23-5 single MSOP dual SINGLE-SUPPLY OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION ● MICRO-SIZE, MINIATURE PACKAGES Single: SOT-23-5, SO-8 Dual: MSOP-8, SO-8 Quad: SSOP-16

DB-54008L-830

Abstract: 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L GRM426X7R104K50 PD54008
Contextual Info: DB-54008L-830 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 800 - 830MHz ■ Supply voltage: 7.2V ■ Output power: 7W ■ Power gain: 7.9 ± 0.3dB ■ Efficiency: 56% - 59%

PD54008L

Abstract: PD54008L-E DB-54008L-470 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50
Contextual Info: DB-54008L-470 Evaluation board using PD54008L-E for 2-way UHF radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 7.2 V ■ Output power: 8 W ■ Power gain: 12.0 ± 1.0 dB ■ Efficiency: 56 % - 68 % ■ Load mismatch: 20:1

smd u2.8

Abstract: in4148 0805 RS738 in4148 smd ST205x 1E 5W BC557 in smd package LM238 SMD LD3 bc558 SMD
Contextual Info: UM0242 User manual USB Power Switch demonstrator kit Introduction The objective of this demonstrator is to display to the user the features and capabilities of the USB Power switches ST204x and ST205x developed by STMicroelectronics using a Windows -based host software application and one of several USB low-speed

st 393

Abstract: BUL805 JESD97
Contextual Info: BUL805 High voltage fast-switching NPN Power Transistor Preliminary Data General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed

Contextual Info: OPA685 OPA 685 OPA 685 For most current data sheet and other product information, visit www.burr-brown.com Ultra-Wideband, Current-Feedback OPERATIONAL AMPLIFIER With Disable TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ●

tms320f2812 adc

Contextual Info: TMS320R2811, TMS320R2812 Digital Signal Processors Data Manual Literature Number: SPRS257B June 2004 − Revised Febrtuary 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production

Contextual Info: SN74LVC1G17-EP www.ti.com SGLS336 – APRIL 2006 SINGLE SCHMITT-TRIGGER BUFFER FEATURES • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing

Contextual Info: bq2058 Lithium Ion Pack Supervisor for 3- and 4-Cell Packs Features General Description ➤ Protects and individually monitors three or four Li-Ion series cells for overvoltage, undervoltage The bq2058 Lithium Ion Pack Supervisor is designed to control the charge

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 1 20 REVISIONS ALL RIGHTS RESERVED. BY - 20 2 3 P LTR DESCRIPTION K ECO-13-012991 DWN APVD JM 14AUG2013 TE 6 1 D DATE 2 7 11 5 9 1 D 10 1 I.D. TAG TE INSTRUCTION SHEETS AND MANUFACTURER'S

BUL805

Abstract: JESD97
Contextual Info: BUL805 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Description 3 The device is manufactured using high voltage

MCS7820CV

Abstract: MCS7820 MCS7820-EVB DM 7820 AN-7820 6B000000 16c450 rs485 8H10
Contextual Info: MCS7820 USB-2.0 to Two Serial Ports Features • USB-2.0 Device Controller • On-Chip USB-2.0 PHY • On-Chip Voltage Regulators • Two 16c450/16c550 compatible UARTs • Supports SIR IrDA Mode on any/all ports • Supports RS-232, RS-485 and RS-422 Serial Ports

Contextual Info: SN74AUP1T98 SINGLE-SUPPLY VOLTAGE-LEVEL TRANSLATOR WITH NINE CONFIGURABLE GATE LOGIC FUNCTIONS www.ti.com SCES614B – OCTOBER 2004 – REVISED DECEMBER 2005 FEATURES • • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages

STU6N62K3

Abstract: 4.7 B1 zener diode 6N62K3 isd 2100 6n62 6N62K
Contextual Info: STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages Datasheet − production data Features Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3

diode zener 7.2v

Abstract: rf power amplifier circuit by 400-470mhz 3214W-1-103E DB-54008L-470 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L H3460
Contextual Info: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%

JESD97

Abstract: M74HC09 M74HC09B1R M74HC09M1R M74HC09RM13TR TSSOP14
Contextual Info: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ■ Low power dissipation: ICC = 1µA (Max.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28 % VCC (Min.) DIP-14 ■ Balanced propagation delays: tPLH ≅ tPHL

sil 9024

Abstract: sil 9002 2418E SP3485EN-L 144971 6724E sp3485e 1682e 891045E 7860E
Contextual Info: Product Characterization Report for the SP3485 Family of Products Revision 2 Prepared By: Velvet Doung & Greg West Date: Aug 16, 2006 SP3485 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure Data Summary for Key Parameters

STP75N20

Abstract: W75N20 P75N20 JESD97 STB75N20 STB75N20T4 STW75N20
Contextual Info: STB75N20 STP75N20 - STW75N20 N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STB75N20 200V <0.034Ω 75A 3 1 STP75N20 200V <0.034Ω 75A STW75N20 200V <0.034Ω 75A •

165nH

Contextual Info: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%

BUL805

Abstract: JESD97
Contextual Info: BUL805 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Description 3 The device is manufactured using high voltage