TSOP34838
Abstract: TSAL6200 TSOP348 TSOP34830 TSOP34833 TSOP34836 TSOP34837 TSOP34840 TSOP34856
Text: TSOP348. VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP348.
D-74025
19-May-03
TSOP34838
TSAL6200
TSOP348
TSOP34830
TSOP34833
TSOP34836
TSOP34837
TSOP34840
TSOP34856
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A10036
Abstract: SUM85N03-07P
Text: SUM85N03-07P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 85 D D D D 0.010 @ VGS = 4.5 V 71 APPLICATIONS PRODUCT SUMMARY V(BR)DSS (V) 30 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency
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SUM85N03-07P
O-263
S-03919--Rev.
19-May-03
A10036
SUM85N03-07P
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70IAS
Abstract: Si4320DY Si4320DY-T1
Text: Si4320DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Gen II D Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET Technology PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.003 @ VGS = 10 V 25 APPLICATIONS 0.004 @ VGS = 4.5 V
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Si4320DY
Si4320DY-T1
S-03921--Rev.
19-May-03
70IAS
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JEDEC TO-252
Abstract: No abstract text available
Text: MBRD835L New Product Vishay Semiconductors formerly General Semiconductor Low VF Surface Mount Schottky Rectifier TO-252 DPAK 0.265 (6.73) 0.255 (6.48) 0.094 (2.39) 0.087 (2.21) 0.198 (5.03) 0.190 (4.83) Reverse Voltage 35V Forward Current 8A Forward Voltage
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MBRD835L
O-252
19-May-03
JEDEC TO-252
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M40Z300W
Abstract: M41T315V M48T254V M68Z512W A1827
Text: M48T254V 3.3V, 16 Mbit 2Mb x 8bit TIMEKEEPER SRAM with Phantom Clock NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V ± 10% INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY AND CRYSTAL
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M48T254V
M40Z300W
M41T315V
M48T254V
M68Z512W
A1827
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Si2321DS
Abstract: Si2321DS-T1
Text: Si2321DS New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.057 @ VGS = - 4.5 V - 3.3 0.076 @ VGS = - 2.5 V - 2.8 0.110 @ VGS = - 1.8 V - 2.3 APPLICATIONS D Load Switch
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Si2321DS
O-236
OT-23)
Si2321DS-T1
S-03986--Rev.
19-May-03
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Si4390DY
Abstract: Si4390DY-T1
Text: Si4390DY New Product Vishay Siliconix N-Channel Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 12.5 0.0135 @ VGS = 4.5 V
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Si4390DY
Si4390DY-T1
S-03920--Rev.
19-May-03
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vrm circuit testing
Abstract: CTLH089-006 CTLH089-008 DSA0032747
Text: 501-569 Qualification Test Report 22Oct03 Rev O EC 0990-1417-03 High Current Card Edge Connector Assembly 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics High Current Card Edge Connector Assembly to determine its conformance to the requirements of Product Specification 108-2148 Revision A.
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22Oct03
19May03
09Sep03.
vrm circuit testing
CTLH089-006
CTLH089-008
DSA0032747
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TSOP32238
Abstract: tsop32256
Text: TSOP322. VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP322. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP322.
D-74025
19-May-03
TSOP32238
tsop32256
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tsop31236
Abstract: TSOP31238 TSOP31230 TSOP31240 TSOP312 TSOP31256 TSOP31233 tsop3123
Text: TSOP312. VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP312. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP312.
D-74025
19-May-03
tsop31236
TSOP31238
TSOP31230
TSOP31240
TSOP312
TSOP31256
TSOP31233
tsop3123
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SUP90N08-06
Abstract: No abstract text available
Text: SUP90N08-06 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.006 @ VGS = 10 V 90 a D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive - Boardnet 42-V EPS and ABS
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SUP90N08-06
O-220AB
S-03918--Rev.
19-May-03
SUP90N08-06
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Untitled
Abstract: No abstract text available
Text: Si2321DS New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.057 @ VGS = - 4.5 V - 3.3 0.076 @ VGS = - 2.5 V - 2.8 0.110 @ VGS = - 1.8 V - 2.3 APPLICATIONS D Load Switch
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Si2321DS
O-236
OT-23)
Si2321DS-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUP90N08-06 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.006 @ VGS = 10 V 90 a D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive - Boardnet 42-V EPS and ABS
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SUP90N08-06
O-220AB
08-Apr-05
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SUD50N02-04P
Abstract: No abstract text available
Text: SUD50N02-04P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 34 APPLICATIONS 0.006 @ VGS = 4.5 V 28 D Synchronous Buck Converter - Low-Side - Desktop, Servers, Desknote D Synchronous Rectification
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SUD50N02-04P
O-252
S-03917--Rev.
19-May-03
SUD50N02-04P
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0919
Abstract: SUM85N03-07P
Text: SUM85N03-07P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 85 D D D D 0.010 @ VGS = 4.5 V 71 APPLICATIONS PRODUCT SUMMARY V(BR)DSS (V) 30 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency
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SUM85N03-07P
O-263
S-0919--Rev.
19-May-03
0919
SUM85N03-07P
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tsop32138
Abstract: TSOP32136 "RCMM" protocol TSOP32156 TSOPxxxx TSOP32130
Text: TSOP321. VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP321. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP321.
D-74025
19-May-03
tsop32138
TSOP32136
"RCMM" protocol
TSOP32156
TSOPxxxx
TSOP32130
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Untitled
Abstract: No abstract text available
Text: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8
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Si6441DQ
Si6441DQ-T1
08-Apr-05
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Si4320DY
Abstract: Si4320DY-T1 MS3543 70IAS
Text: Si4320DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Gen II D Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET Technology PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.003 @ VGS = 10 V 25 APPLICATIONS 0.004 @ VGS = 4.5 V
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Si4320DY
Si4320DY-T1
S-03921--Rev.
19-May-03
MS3543
70IAS
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Si4511DY
Abstract: Si4511DY-T1 s03987
Text: Si4511DY New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.0145 @ VGS = 10 V 9.6 0.017 @ VGS = 4.5 V 8.6 0.033 @ VGS = - 4.5 V - 6.2 0.050 @ VGS = - 2.5 V
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Si4511DY
Si4511DY-T1
S-03987--Rev.
19-May-03
s03987
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Si6441DQ
Abstract: Si6441DQ-T1
Text: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8
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Si6441DQ
Si6441DQ-T1
S-03984--Rev.
19-May-03
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M40Z300W
Abstract: M41T315V M48T254V M68Z512W M4T32-BR12SHTR A1827
Text: M48T254V 3.3V, 16 Mbit 2 Mb x 8 bit TIMEKEEPER SRAM WITH PHANTOM CLOCK • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY AND CRYSTAL ■ REAL TIME CLOCK KEEPS TRACK OF TENTHS/HUNDREDTHS OF SECONDS, SECONDS, MINUTES, HOURS, DAYS, DATE,
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M48T254V
100ns
M40Z300W
M41T315V
M48T254V
M68Z512W
M4T32-BR12SHTR
A1827
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SUP90N08-06
Abstract: No abstract text available
Text: SUP90N08-06 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.006 @ VGS = 10 V 90 a D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive - Boardnet 42-V EPS and ABS
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SUP90N08-06
O-220AB
18-Jul-08
SUP90N08-06
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lt 6223
Abstract: No abstract text available
Text: 2 3 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D BY TYCO ELECTRONICS CORPORATION. COPYRIGHT FOR ALL PUBLIC ATIO N RIG HTS LOC RESERVED . REVISIONS D IS T J LTR A D E S C R IP T IO N RELEASE DATE ECR —05 —001 941 19MAY03 DWN APVD c.w I. E D 2 .5 4
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19MAY03
19APR05
5175677-E
31MAR2000
lt 6223
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 0 0 REVISIONS P LTR A DESCRIPTION ECO —05 —00671 5 DATE DWN APVD 20DEC04 RB MS S PECIFIC ATIO NS MAKE-BEFORE-BREAK
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20DEC04
UL94HB,
MHS--123
20DEC05
19MAY03
31MAR2000
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