1206-8 chipfet
Abstract: Vishay DaTE CODE 1206-8 si5903dc si5903dc-t1-e3
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si5903DC
2002/95/EC
Si5903DC-T1-E3
Si5903DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
1206-8 chipfet
Vishay DaTE CODE 1206-8
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PDF
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Vishay DaTE CODE 1206-8
Abstract: AN811 SI5424DC-T1-GE3 1206-8 chipfet layout
Text: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC
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Original
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Si5424DC
Si5424DC-T1-E3
Si5424DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE 1206-8
AN811
1206-8 chipfet layout
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PDF
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marking code g1
Abstract: mil 43
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Original
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Si5515CDC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code g1
mil 43
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5920DC Vishay Siliconix Dual N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si5920DC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TSM43 Vishay Sfernice Surface Mount Cermet Trimmers Multi-turn Cermet Sealed, Industrial Grade FEATURES • Sealed to withstand board wash processing • Pick and place centering design, with flush adjustment • 4.0mm design meets EIA SMD standard trimmer footprint
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Original
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TSM43
TSM43
08-Apr-05
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PDF
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5A02
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C
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Original
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UL94-V0
23-AVR-09
17-NOV-08
31-DEC-07
23-FEB-07
19-DEC-06
19-JAN-04
5A02
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PDF
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B 103 Potentiometers SFERNICE
Abstract: TS53YL 106M T53Y TS53Y TS53YJ
Text: TS53Y Vishay Sfernice Surface Mount Miniature Trimmers Single-Turn Cermet Sealed FEATURES • 0.20 Watt at 85°C • GAM T1 • For PCB version see T53Y series • Excellent stability • Wide ohmic range • Low temperature coefficient • Low contact resistance variation
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TS53Y
TR500
19-Jan-04
B 103 Potentiometers SFERNICE
TS53YL
106M
T53Y
TS53Y
TS53YJ
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PDF
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mosfet 23 Tsop-6
Abstract: No abstract text available
Text: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.5 0.025 at VGS = 2.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
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Original
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Si5406DC
Si5406DC-T1-E3
Si5406DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
mosfet 23 Tsop-6
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PDF
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AN811
Abstract: S0915
Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 7.6 - 12 0.041 at VGS = - 2.5 V - 6.6 0.054 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Original
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Si5475DC
2002/95/EC
Si5475DC-T1-E3
Si5475DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
AN811
S0915
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Original
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Si5515CDC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V
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Original
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Si5515DC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21
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Original
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Si5933DC
2002/95/EC
Si5933DC-T1-E3
Si5933DC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = -10 V -3.7 0.235 at VGS = -4.5 V -2.8 1206-8 8 1.
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Original
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Si5504BDC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21
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Original
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Si5513DC
2002/95/EC
Si5513DC-T1-E3
Si5513DC-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5975DC Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.127 at VGS = - 2.5 V - 3.4 0.164 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si5975DC
2002/95/EC
Si5975DC-T1-E3
Si5975DC-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. REVISIONS LTR DESCRIPTION REV PER EC 0S12- 0024- 04 114.3 DWN APVD 19JAN04 BC AS [4.500] MAX 105.61 0.9 4 ± 0.0 5 DATE
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OCR Scan
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19JAN04
31MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G 3H — 0 0 0 8 — 0 4 DWN 19JAN04 APVD JR MS D B ACTIVE 20141-03 STANDARD
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19JAN04
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G 3H — 0 0 0 9 — 0 4 DWN 19JAN04 APVD JR MS D D SIGHT B B □ BSEILETE
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19JAN04
31MAR2000
18APR01
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 6 T H I S DRAWI NG C OPYRI GHT I S UNP UB L I S HE D. 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. LOC DIST REVISIONS A L L R I GH T S R ES ERVED. LTR DESCRIPTION RELEASE -1 REV 0520-0726-04 PER THRU -12 DATE DWN APVD 19JAN04 TS JH
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14JUN04
19JAN04
INCHE51
/home/usOI5872/edmmod
00T79
JUN97
-JAN-04
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G 3H — 0 0 0 8 — 0 4 DWN 19JAN04 APVD JR MS D D B B □ BSEILETE 20501-11-45
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19JAN04
P-11-45
31MAR2000
18APR01
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION REV PER 0G3H— 0 0 0 9 — 04 DATE DWN APVD 19JAN04 JR MS D D ±.005 .275 -H DIA. .400 +.015.
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19JAN04
L2-6147
31MAR2000
20APR01
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PDF
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838300
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G3H— 0 0 0 7 — 04 DWN 19JAN04 APVD JR MS D D © & STAMPED □N UNDERSIDE
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19JAN04
31MAR2000
19APR01
838300
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION REV PER 0G 3H — 0 0 0 8 — 0 4 DATE DWN APVD 19JAN04 JR MS D D ±.010 ± .0 0 5 ,461 DIA,
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19JAN04
18APR01
31MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS AD 00 P LTR H 1 . ASSEMBLY MAY BE BROKEN TO THE DESIRED NUMBER OF POSITIONS 2. TRUE POSITION TOLERANCE OF THE POST TIPS APPLIES WHEN THE HEADER
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0G3C--0040--
19JAN04
19JAN0
19JAN05
31MAR2000
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