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    Untitled

    Abstract: No abstract text available
    Text: 19-0 94 1 ; R ev 2 ; 7/95 J V \ J V X A J V \ . General Description TheMX7541A is high performance CMOS multiplying 12-bit digital-to-analog converter DAC . Low power operation and 12 bit (0.012%) linearity make it suitable for a wide range of precision data acquisition and


    OCR Scan     		PDF TheMX7541A 12-bit MX7541A AD7541A AD7541. 18-lead

    MX7541

    Abstract: No abstract text available
    Text: y u y jx iy k i CMOS 12 B it M ultiplying D/A Convertor - Features ♦ 12 Bit Linearity 1/2 LSB + 1 LSB Gain Accuracy + Guaranteed Monotonic + Low Power Consumption + Four-Quadrant Multiplication + TTL and CMOS Compatible


    OCR Scan     		PDF MX7541A 12-bit AD7541A AD7541. 18-lead MX7541

    41C1000

    Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
    Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000C KM41C1000C 576x1 KM41C1000C-6 KM41C1000C-7 KM41C100 20-LEAD 41C1000 KM41C1000CJ-7 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7

    1000CLP

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 KM41C1000CL-7 KM41inued) 20-LEAD 1000CLP

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns GD1S412

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS D im e n sio n s in M ilim e ters 8 - D P -3 0 0 n n r~i n 12-D IPH -300 12 n n n n n n LS □ 6 !o U T T ' LT U 167 Cl CP ELECTRONICS PACKAGE DIMENSIONS D im e n sio n s in M ilim e ters 14-DIPH-300 ~i i— i : • o “ci! cn cn □


    OCR Scan     		PDF 14-DIPH-300 -300A 18-PLCC-REC 32-PLCC-REC.

    Untitled

    Abstract: No abstract text available
    Text: b?E J> m SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 0Ü1S3ÖG SS3 KM41C1000C CMOS DRAM 1Mx1 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra n g e : T h e S am sung KM41C1000C is a C M O S high speed 1,048,576x1 D ynam ic R andom A ccess M emory. Its


    OCR Scan     		PDF KM41C1000C KM41C1000C 576x1 110ns KM41C1000C-7 130ns KM41C1000C-8 KM41C1000C-6 150ns

    KM41C1000CJ-6

    Abstract: KM41C1000cJ-7 KM41C1000C-6 KM41C1000C-8 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7
    Text: SAMSUNG E L E C TRONICS INC b?E ]> • 7=îtim42 0G153Ö0 553 I SMGK KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF b4142 KM41C1000C KM41C1000C-6 110ns KM41C1000C-7 130ns KM41C1000C-8 150ns 256Kx4 KM41C1000CJ-6 KM41C1000cJ-7 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7

    KM41C1000CLP

    Abstract: KM41C1000CLJ DRAM 18DIP KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 Scans-001144 samsung hv capacitor
    Text: SAMSUNG ELECTRONICS INC b7E T> 7RbMmH 00153^7 flS7 • CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C1000CL KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns 200fiA cycle/64ms 256Kx4 KM41C1000CLP KM41C1000CLJ DRAM 18DIP Scans-001144 samsung hv capacitor

    DRAM 18DIP

    Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
    Text: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL-6 110ns KM41C1000CSL-7 130ns KM41C1000CSL-8 150ns 100fiA 100/A cycle/128ms DRAM 18DIP DRAM 256kx4

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> 7 = ^ 4 1 4 2 0 0 1 5 4 1 4 7bb H S f l G K CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL 576x1 KM41C1000CSL-6 110ns 130ns KM41C1000CSL-8 KM41C1000CSL-7 150ns 20-LEAD

    47IlF

    Abstract: T3D85 T3D 8 KM41C1000CSLP6
    Text: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL 576x1 KM41C1000CSL-6 KM41C1nches 20-LEAD 47IlF T3D85 T3D 8 KM41C1000CSLP6