18B DIODE Search Results

ct60am18b

Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A

ct60am

Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V

CT60AM-18B

Abstract: resonant inverter IGBT CT60AM CT60AM18B ct60am
Contextual Info: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT60AM-18B RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 2 •— ' V c e s . 900V ' l e .60A

Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE Dimensions in mm OUTLINE DRAWING 5 ‘ 2 0.5 • VCES . 900V @ •3 © GATE COLLECTOR EMITTER COLLECTOR

Marking 18A

Abstract: MARKING 8S SOT-23
Contextual Info: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details HSD2-18B Product Details Military/Aerospace High Performance Relays

ZENER DIODES SOT-23

Abstract: marking 18j sot23 MARKING 8S SOT-23
Contextual Info: CÎ! |t y p e n o . ZENER DIODES SOT-23 CASE ZZK TEST ZENER CURRENT VOLTAGE IZ=.25mA @10%Mod MAX VR V MARKING VZ +5% Nominal ohms MAX ohms Max MMBZ5221BL 20 2.4 1200 30 100 1.0 18A MMBZ5222BL MMBZ5223BL MMBZ5224BL 20 20 20 20 20 2.5 2.7 30 30 18B 30 29 28

DS75-08B

Contextual Info: |B B j J Rectifier Diodes Avalanche Diodes DS75 DSI75 DSA75 DSAI75 ^FRMS ^FAVM v¥ 1 .Anode vR R U . B R , r f n v’ R S M V on stud V V V 1 ^ •f- on stud - DS75-08B DS75-12B DSI75-08B DSI 75-12B 1300 1760 1950 1200 1600 1800* DSA75-12B DSA75-16B DSA75-18B

gz zener

Abstract: 39A zener diode RZ33A 6AR6 GZ33AR GZ47A GZ27AR 34 GZ gz 77 diodes 415 39a
Contextual Info: y zener diodes diodes zener THOMSON-CSF Type» Vc min 10 W / Tease GZ 6A, GZ 8A, GZ 10A, GZ 12A, GZ 15A, GZ 18A, GZ 22A, GZ 27A, GZ 33A, GZ39A, GZ 47A, GZ 56A, GZ68A, GZ 82A, GZ 10B, GZ 12B, GZ 15B, GZ 18B, R (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R)

RZ18B

Abstract: RZ39A RZ47A RZ15A RZ12BR
Contextual Info: STC D I S G S— THOMSON 7 ^ 2 3 7 QÜÜSSQQ 4 f ? ^ 590 02500 O D T H O M S O N -C S F R Z 6 A DIVISION SEMICONDUCTEURS — R Z 18B . • ZENER DIODES DIODES ZENER 50 W silicon Zener diodes : • • • Hermetically sealed metal according to normalization CCTU : F 10'and JEDEC DO-5.

Contextual Info: T-1 3/4 5mm SOLID STATE LAMP Part Number: L-7113CGCK Green Features Description z Low power consumption. The Green source color devices are made with AlGaInP on z Popular T-1 3/4 diameter package. GaAs substrate Light Emitting Diode. z General purpose leads.

Contextual Info: T-1 3mm SOLID STATE LAMP Part Number: L-34GD Green Features Description z Low power consumption. The Green source color devices are made with Gallium z Popular T-1 diameter package. Phosphide Green Light Emitting Diode. z General purpose leads. z Reliable and rugged.

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012CGCK Green Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode. z Wide viewing angle.

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP Part Number: KPT-1608SYCK Super Bright Yellow Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.

Contextual Info: 3.4mm RIGHT ANGLE LED INDICATOR Part Number: L-1384AD/1GD Green Features Description z Ideal for card edge status indication. The Green source color devices are made with Gallium z Wide viewing angle. Phosphide Green Light Emitting Diode. z High reliability-life measured in years.

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP Part Number: KPH-1608SYCK Super Bright Yellow Features Description  1.6mmX0.8mm SMT LED, 0.65mm thickness. The Super Bright Yellow device is made with AlGaInP on  Low power consumption. GaAs substrate light emitting diode chip.

Contextual Info: 3.0mmx1.0 mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3010CGCK Green Features Description z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode.

Contextual Info: 3.4mm RIGHT ANGLE LED INDICATOR Part Number: L-1384AD/1GD Green Features Description z Ideal for card edge status indication. The Green source color devices are made with Gallium z Wide viewing angle. Phosphide Green Light Emitting Diode. z High reliability-life measured in years.

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SYCK Super Bright Yellow Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.

Contextual Info: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP Part Number: KPA-2106CGCK Green Features Description  2.1mmX0.6mm right angle SMT LED, 1.0mm thickness. The Green source color devices are made with AlGaInP on  Low power consumption. GaAs substrate Light Emitting Diode.

irf 100v 200A

Abstract: irf 345 irg4pc50sdpbf C-150
Contextual Info: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,

IGBT 200V 50A

Contextual Info: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,

diode T-77

Abstract: T-72 diode 5.6B ZENER MTZJ T-72 16B 5.6B DIODE 24B ZENER DIODE 9.1B 7.5B 35 DIODE MTZJ-8.2B 36b 75
Contextual Info: MTZJ36B Diodes Zener diode MTZJ36B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2

MTZJ T-72 16B

Abstract: MTZJ18B T-77 T-72 diode MTZJ 15 T-72 MTZJ 7.5 B T-72 diode T-77 diode T-72 5.1B mtzj diode T77 MTZJ T-72 12B
Contextual Info: MTZJ30B Diodes Zener diode MTZJ30B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2