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    1880 MINATO Search Results

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    2SK1880STL-E Renesas Electronics Corporation Nch Mosfet For Switching Visit Renesas Electronics Corporation
    10118807-003LF Amphenol Communications Solutions HPCE VERT REC 48P12S Visit Amphenol Communications Solutions
    65188-001LF Amphenol Communications Solutions Din Accessory, Backplane Connectors, Latching Frame 3x32 Visit Amphenol Communications Solutions
    RJE021880310 Amphenol Communications Solutions Modular Jack - Right Angle, Input Output Connectors 8P8C, Shield. Visit Amphenol Communications Solutions
    RJE031880310 Amphenol Communications Solutions Modular Jack - Right Angle, Input Output Connectors 8P8C, Without Shield, Without Panel Stop. Visit Amphenol Communications Solutions

    1880 MINATO Datasheets Context Search

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    MHW1810

    Abstract: MHW1810-1 MHW1810-2
    Text: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF Line PCS Band RF Power LDMOS Amplifiers • Specified 26 Volts, 1805–1880 MHz, Class AB Characteristics Output Power = 16 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts MHW1810–1


    Original     		PDF MHW1810/D MHW1810-1 MHW1810-2 MHW1810 301AW MHW1810-1 MHW1810-2

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1810-1 MHW1810-2 PCS Band RF Power LDMOS Amplifiers 1805ā–ā1880 MHz, 10 W RF POWER LDMOS AMPLIFIERS CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF MHW1810/D MHW1810-1 MHW1810-2 301AWâ MHW1810â

    Untitled

    Abstract: No abstract text available
    Text: JRC SAW FILTER NSVS718 Application PCS USA TX HALF BAND ( 2 IN - 2 OUT ) Electrical Specification: (Table 1) The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Parameter Input and Output Impedance Nominal Center Frequency(f0)


    Original     		PDF NSVS718 1880MHz 1910MHz 1500MHz 1750MHz 1960MHz

    MHW1810

    Abstract: MHW1810-1 MHW1810-2
    Text: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF Line PCS Band RF Power LDMOS Amplifiers 1805ā–ā1880 MHz, 10 W RF POWER LDMOS AMPLIFIERS CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF MHW1810/D MHW1810-1 MHW1810-2 301AW MHW1810 MHW1810-1 MHW1810-2

    zo 405 mf

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 zo 405 mf

    SMD Transistor z6

    Abstract: MRF18060A BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060AS 465A-04 smd 4-pin
    Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF18060A/D MRF18060A MRF18060AS GSM1805 MRF18060A SMD Transistor z6 BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060AS 465A-04 smd 4-pin

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 MRF18030A/D

    RF POWER TRANSISTOR NPN, motorola

    Abstract: MRF18060 MRF18060A
    Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060A/D GSM1805 MRF18060A MRF18060AR3 MRF18060ASR3 RF POWER TRANSISTOR NPN, motorola MRF18060

    IRL 724 N

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 IRL 724 N

    400S

    Abstract: MRF18030A MRF18030AR3 MRF18030ASR3
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 400S MRF18030A MRF18030ASR3

    MRF18030A

    Abstract: IRL 724 N 400S MRF18030ALR3 MRF18030ALSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3


    Original     		PDF MRF18030A/D MRF18030ALR3 MRF18030ALSR3 MRF18030ALR3 MRF18030A IRL 724 N 400S MRF18030ALSR3

    MRF18030A

    Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 MRF18030A 2019 gain 400S MRF18030ASR3 1003 c2 J1022

    Transistor z1

    Abstract: MRF18060A
    Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060AS Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF18060A/D MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3 GSM1805 MRF18060ASR3 Transistor z1

    MRF18030ALSR3

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030AR3 RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ASR3 Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ALR3 MRF18030ASR3 MRF18030ALSR3 MRF18030ALSR3 MRF18030A/D

    transistor smd z3

    Abstract: BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060ALSR3 MRF18060AR3 MRF18060ASR3 SMD transistor Z2
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF18060A/D GSM1805 MRF18060AR3 MRF18060ASR3 MRF18060ALSR3 transistor smd z3 BC847 GSM1800 LP2951 MRF18060 MRF18060ALSR3 SMD transistor Z2

    DEMO 0365 R

    Abstract: SMD Transistor z6 Transistor z1 MRF18060A transistor smd z3 BC847 SOT-23 PACKAGE 0805 smd z5 transistor 927 SOT23 GSM1805 LP2951
    Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF18060A/D MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 GSM1805 MRF18060A MRF18060AR3 MRF18060ALSR3 DEMO 0365 R SMD Transistor z6 Transistor z1 transistor smd z3 BC847 SOT-23 PACKAGE 0805 smd z5 transistor 927 SOT23 GSM1805 LP2951

    J5-18

    Abstract: MRF18085A
    Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF18085A/D MRF18085A MRF18085AR3 MRF18085ALSR3 J5-18

    MRF18085ALS

    Abstract: MRF18085A
    Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF18085A/D MRF18085A MRF18085AR3 MRF18085ALSR3 MRF18085ALS

    MRF18085A

    Abstract: GSM1800 MRF18085ALSR3 MRF18085AR3 MRF18085ALS
    Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF18085A/D MRF18085A MRF18085AR3 MRF18085ALSR3 MRF18085A MRF18085AR3 GSM1800 MRF18085ALSR3 MRF18085ALS

    MRF18085A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF18085A/D MRF18085AR3 MRF18085ALSR3 MRF18085A

    smd transistor wb1

    Abstract: wb1 sot package sot-23
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090A/D MRF18090A MRF18090AS smd transistor wb1 wb1 sot package sot-23

    smd wb1

    Abstract: smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090A MRF18090AS
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090A/D MRF18090A MRF18090AS MRF18090A smd wb1 smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090AS

    MRF18085A

    Abstract: AN1955 GSM1800 MRF18085ALSR3 MRF18085AR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3


    Original     		PDF MRF18085A/D MRF18085AR3 MRF18085ALSR3 MRF18085AR3 MRF18085A AN1955 GSM1800 MRF18085ALSR3

    MRF18085A

    Abstract: AN1032 AN1938 GSM1800 motorola application note amplifier power power rf transistor study
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1938/D AN1938 Sensitivity of High Power RF Transistors to Source and Output Loads Freescale Semiconductor, Inc. Prepared by: Béatrice Branger and Olivier Lembeye


    Original     		PDF AN1938/D AN1938 MRF18085A AN1032 AN1938 GSM1800 motorola application note amplifier power power rf transistor study