1878 TRANSISTOR Search Results

2N6758

Abstract: 2N6902 QPL-19500
Contextual Info: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,

BOW83

Abstract: BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d
Contextual Info: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright O 1997, Power Innovations Limited. UK • AUGUST 1878 - REVISED MARCH 1997 Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D • 150 W at 2S°C Case Temperature

23A18

Contextual Info: Low Saturation Voltage Switching Transistors E-pack SMD E-pack (Lead type) ITO-220 Bipolar transistors HSV series Bipolar transistors Absolute Maximum Ratings Type No. Electrical Characteristics VcEO VcBO VcEO V ebo Ic Ib Pt Tstg Tj [V] [V] [V ] [A ] [A ]

tf s 544 a

Abstract: 2sc4978 2sc497
Contextual Info: Low Saturation Voltage Sw itching Transistors L S V series Bipolar transistors Parts No. EIAJ No. Absolute Maximum Ratings V cbo VCEO V eb o lc Ib Pt [V] [V] [V] [A] [A] [W ] -5 1796 -7 1679 -5 -60 -7 1600 -12 1601 -15 2SC4668 7 4669 10 4148 7 60 7 40 12 4151

Contextual Info: Low Saturation Voltage Switching Transistors E-pack S M D E-pack (Lead type) ITO-220 Bipolar transistors Absolute Maximum Ratings Electrical Characteristics VCEO h fE (sus) (min) [V ] (min) V cE V be 0jc fi too ts tf (sat) (sat) (max) (max) (max) (typ) (max) (max) (max)

SM 4151

Abstract: 2sc497
Contextual Info: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo

2sa1876

Contextual Info: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]

smd transistor P2D

Abstract: p2d smd smd code p2d PMBTA92 smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE
Contextual Info: • bb53'ì31 □□2 Sa ciö 12Ö ■ APX N AMER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E T> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.

Contextual Info: bbS3^31 DDaSa^fi 126 • APX N AUER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E » 7 V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.

TO-92variant

Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)

k-band gaas schottky diode

Abstract: transistor 1877 1878 TRANSISTOR microwave transistor bfy193 Siemens Microwave BFY193 Microx 1882 hirel Microwave Semiconductors BAT DIODES
Contextual Info: SIEMENS HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 1870 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 1870 1870 1871 1871

SGSP256

Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Contextual Info: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

TH3L10

Abstract: c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795
Contextual Info: HIGH VOLTAGE • HIGH SPEED SWITCHING TRANSISTORS HDT series ITO-220 Bipolar transistors NPN Absolute Maximum Ratings VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 6 3 10 15 4 6 800 7 hFE (min) VCE (sat) (max) VBE (sat)

2SC1871

Abstract: n 1895 1878 TRANSISTOR 2SA893
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

BDW740

Abstract: BDW748 B0W74B D 1878 TRANSISTOR BOW74C
Contextual Info: BDW74, BDW74A, BDW74B, BOW74C, BDW74D PNP SILICON POWER DARLINGTONS CopyilgW 0 1997. Power Innovations UmHed, UK AUG UST 1978 - REVISED M ARCH 1997 Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D TO-220 PACKAGE TOP VIEW 80 W at 25°C Case Temperature

U893BS

Abstract: U832BS U893BSE 7812 AA PF2470 u893 D 1878 TRANSISTOR
Contextual Info: U832BS 3-GHz Frequency Divider Description U832BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. Features Benefits D U832BS divides by 2

U832BS

Abstract: D 1878 TRANSISTOR U832 U832BS-FP U893BSE RFDC
Contextual Info: U832BS 3-GHz Frequency Divider Description U832BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. Features Benefits D U832BS divides by 2

U891BS

Abstract: 1878 TRANSISTOR D 1878 TRANSISTOR U891 TRANSISTOR 7812 U893BSE U832BS 7812 ACT datasheet RS 7812 U834BS
Contextual Info: U832BS / U834BS 3-GHz Frequency Divider Description U832BS and U834BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. D U832BS divides by 2

D 1878 TRANSISTOR

Abstract: TRANSISTOR B 834 7812 pin out U834BS Telefunken u 690 ic 7848 Transistor 834 pin diagram of three pin ic 7812 7812 MAX INPUT VOLTAGE U834B
Contextual Info: U 832 BS-FP U 834 BS-FP TELEFUNKEN Semiconductors 3-GHz Frequency Divider Description U 832 BS and U 834 BS use TELEFUNKEN’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application.

PowerMOS Transistors

Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)

kc 2462

Abstract: ED36 symposium ED-36 gunn diode datasheet Betel d 1878 transistors A102
Contextual Info: ADI Reliability Handbook Table XII. 1200 ؎500 ppm 38 @ 90% C.I. ELFR FIT Rate No Failures Occurred in Other Stress Tests Conducted, e.g., HAST, T/C, etc. The ppm figure obtained in Table XII was at the time of qualification and based on a limited sample size. Recent figures based on statistically valid sample sizes indicate that the ELFR is running at less

lmd18245

Abstract: stepper motor driver full bridge 6A 230v dc motor drive circuit diagram 4000 watts power amplifier circuit diagram LMD18245T TA15A 12 dc to 8v dc chopper electrical diagrams 12V BIPOLAR STEPPER MOTOR LT1234 12v DC SERVO MOTOR CONTROL circuit 2A
Contextual Info: N a t i o n a l LMD18245 & S e m i c o n d u c t o r LMD18245 3A, 55V DMOS Full-Bridge Motor Driver General Description Features The LMD18245 full-bridge power amplifier incorporates all the circuit blocks required to drive and control current In a brushed type DC motor or one phase of a bipolar stepper

c4460

Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4

MSC 5010

Abstract: Microwave Semiconductors MIL883 leak
Contextual Info: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and