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    1873 TRANSISTOR Search Results

    1873 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1873 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MAX1102

    Abstract: MAX1103 MAX1104 MAX7418 MAX7426 Nippon capacitors
    Text: 19-1873; Rev 0; 12/00 8-Bit CODECs _Applications Analog I/O for Microcontrollers Analog System Signal Supervision Voice Recording and Playback Features ♦ 8-Bit ADC ±1LSB INL Built-In Track-and-Hold 48dB of SINAD ♦ 8-Bit DAC ±1LSB INL


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    MAX1102) MAX1103) MAX1104) 25ksps MAX1102 MAX1103 MAX1102/MAX1103) MAX1102EUA MAX1102/MAX1103/MAX1104 MAX1102 MAX1103 MAX1104 MAX7418 MAX7426 Nippon capacitors PDF

    LMP2011

    Abstract: LMP7731 AN-1873
    Text: National Semiconductor Application Note 1873 Debbie Lai June 19, 2008 VOS Input Offset Voltage there is a voltage present at the output. This voltage is due to the number of mismatches of the op-amp's internal transistors and resistance. The value of Vos is determined by the voltage


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    LMP7731 AN-1873 LMP2011 LMP7731 AN-1873 PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: 19-1873; Rev 0; 12/00 8-Bit CODECs _Applications Analog I/O for Microcontrollers Analog System Signal Supervision Voice Recording and Playback Features ♦ 8-Bit ADC ±1LSB INL Built-In Track-and-Hold 48dB of SINAD ♦ 8-Bit DAC ±1LSB INL


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    MAX1102/MAX1103/MAX1104 MAX1102/MAX1103 MAX1104 MAX1102 MAX1102/MAX1103/MAX1104 Nippon capacitors PDF

    light sensor abstract

    Abstract: APP1873 MAX1615 MAX4040 MAX6605
    Text: Maxim > App Notes > TEMPERATURE SENSORS and THERMAL MANAGEMENT Keywords: analog, temperature sensors, temperature, 4-20mA, temp sensor, loop powered Feb 03, 2003 APPLICATION NOTE 1873 4mA–20mA Loop Powered Temperature Sensor Abstract: A simple circuit that allows a 4mA–20mA to power an analog temperature sensor.


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    4-20mA, com/an1873 MAX1615: MAX4040: MAX6605: AN1873, APP1873, Appnote1873, light sensor abstract APP1873 MAX1615 MAX4040 MAX6605 PDF

    PowerMOS Transistors

    Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)


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    OT54variant O-92variant) O-220AB) OT96-1 OT137-1 OT186 O-220 OT186A O-220) OT223 PowerMOS Transistors 075E05 MS-012AA SO24 SSOP16 SSOP24 PDF

    k thermocouple amplification circuit diagram

    Abstract: AD594 AD595 AD594CD drawn pin configuration of ic 7402 J type thermocouple AD594A AD594AD AD594C AD595A
    Text: a Monolithic Thermocouple Amplifiers with Cold Junction Compensation AD594/AD595 FEATURES Pretrimmed for Type J AD594 or Type K (AD595) Thermocouples Can Be Used with Type T Thermocouple Inputs Low Impedance Voltage Output: 10 mV/؇C Built-In Ice Point Compensation


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    AD594/AD595 AD594) AD595) O-116 k thermocouple amplification circuit diagram AD594 AD595 AD594CD drawn pin configuration of ic 7402 J type thermocouple AD594A AD594AD AD594C AD595A PDF

    B0539

    Abstract: b0539c 539A
    Text: BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright «> 1997, Power Innovations LimHed, U K _ JUNE 1873 - R EVISED MARCH 1897 • Designed for Complementary Use with the BD540 Series •


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    BD539, BD539A, BD539B, BD539C, BD539D BD540 BD539 BD539A BD539B 8D539C B0539 b0539c 539A PDF

    2N6895 JANTXV

    Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
    Text: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds


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    2N6895 2N689S 2N6895 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6895 JANTXV qpl-19500 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX PDF

    TO-92variant

    Abstract: No abstract text available
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)


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    OT54variant O-92variant) O-220AB) OT96-1 OT137-1 T0-220 OT186A O-220) OT223 OT226 TO-92variant PDF

    HOA-1873

    Abstract: 187313 1873 TRANSISTOR ST DARLINGTON TRANSISTOR honeywell hoa transistor ac 050 HOA 1873-12
    Text: HOA 1873 — Transmissive Switch i7 *-'* * Com­ ponents Characteristics Sensor aperture Test condition On-«taie collector current Off-state collector current Saturation voltage LED forward voltage VCE - 5 V lF as shown VCE - 10 V lF - 0 lc and lF as shown


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    SMD TRANSISTOR MARKING 76

    Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
    Text: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.


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    k-band gaas schottky diode

    Abstract: transistor 1877 1878 TRANSISTOR microwave transistor bfy193 Siemens Microwave BFY193 Microx 1882 hirel Microwave Semiconductors BAT DIODES
    Text: SIEMENS HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 1870 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 1870 1870 1871 1871


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    BAS40, BXY42, BFY180, BFY193, BFY405, CFY25, CFY66, CLY29, CLY27, HPAC140 k-band gaas schottky diode transistor 1877 1878 TRANSISTOR microwave transistor bfy193 Siemens Microwave BFY193 Microx 1882 hirel Microwave Semiconductors BAT DIODES PDF

    Untitled

    Abstract: No abstract text available
    Text: • bb53^31 00256=14 562 H A P X N AMER PHILIPS/DISCRETE b?E D _ PMBTA55 PMBTA56 J SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature SMD plastic envelope intended for surface mounted applications.


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    PMBTA55 PMBTA56 PDF

    SD1862

    Abstract: SD1875 TCC20L15 TCC2100 SD1845 SD1876 20236
    Text: s i MMiyitglTtiMOtgS ^ 7# SGS-THOMSON TELECOM AND DATA COMMUNICATIONS RF & MICROWAVE TRANSISTORS .230 2 L F L TO 215 AA .400 MAT FL 2 . 4 GHz microwave transistors for class A operation Package Typo SD P/N TC C 2100 TCC 20 L 08 TC C 20L15 TCC 20 L 25 SD 1850


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    TCC2100 TCC20L15 SD1862 SD1875 SD1845 SD1876 20236 PDF

    x1rv

    Abstract: SGSP151 SGSP252 sgsp251 P252 C SGSP351 FT04c
    Text: S G S-THOMSON 07E D | 712^237 001703 1 3 73C 17 3 28 o 7 7 3 *1 -0 7 S A L V N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.


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    SGSPI51/P152 SGSP251/P252 SGSP351/P352 OT-82 O-220 SGSP151 SGSP251 SGSP351 SGSP152 SGSP252 x1rv P252 C FT04c PDF

    high frequency diode

    Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
    Text: 1. Using Device Selection Flowchart 1. Using Device Selection Flowchart 17 1. Using Device Selection Flowchart 1.1 General Purpose Low Frequency Transistor Selection Method Start I S ig n a l Frequency H igh Frequency ~ G H Z Low Frequency (D C ~ S e v e ra l M HZ)


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    RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S PDF

    2SC1871

    Abstract: n 1895 1878 TRANSISTOR 2SA893
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    frc-25 2SC1871 n 1895 1878 TRANSISTOR 2SA893 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q62702-F1215 T-143 E3Sb05 23SLQ5 PDF

    2SA675

    Abstract: t430 transistor t430 T591 PA33 ss-3r
    Text: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £


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    2SA675 2SA675 t430 transistor t430 T591 PA33 ss-3r PDF

    Untitled

    Abstract: No abstract text available
    Text: R aM T R O N \ FM 1008/1108/1208/1308/1408 FRAM 1,024-16,384-Bit Nonvolatile Static RAM Family c o f^ p o ira rio M Product Preview F e a tu re s • Nonvolatile CMOS Static RAM with > 10 Year Data Retention Without Power • Endurance Rated at >1010 Read/Write Cycles


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    384-Bit 100ns 200ns 24-Pin 24-Pin) PDF

    2sc 1203

    Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
    Text: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240


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    1815L 2SC2240 2SC1627 2SC752G SC-70) SC-59) 2SC2713 2SC4210 2SA1621 2SC4209 2sc 1203 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23 PDF

    FM1108

    Abstract: 512X8 from 128x8 ram FM1208
    Text: R AMT RON CORP 2 QE RaM IRO N X c 0 « \ P 0 R a T i0 N D • 7SSSQ1S Q00DDti3 7 ■ FM 1008/1108/1208/1408 FRAM : . . . . 1,024-Bit to 16,384-Bit N onvolatile S tatic RAM Fam ily Product Preview _T - ¥ A - 2 3 - ! Z Features • True Nonvolatile CMOS Static RAM with > 10 Year Data


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    Q00DDti3 024-Bit 384-Bit 100ns 200ns 150mW Compatible098 24-pin) FM1108 512X8 from 128x8 ram FM1208 PDF

    SCT T

    Abstract: No abstract text available
    Text: RA MTRO N R a M V H E CORP D | 7555015 DGOGGEfc, FMx 801 FRAMTM T R Q N 1 I T - 4 6 -*3-57 256 x 1 Nonvolatile Static RAM c o r p o r a t io n Design Goal Specification Features 1Ferroelectronic Random Access Memory FRAM Demonstration Vehicle • "True" Nonvolatile CMOS Static RAM


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    100ns 7S55015 T-46-23-37 100ns/V. SCT T PDF

    MSC 5010

    Abstract: Microwave Semiconductors MIL883 leak
    Text: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and


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