1835A Search Results

LA7831

Abstract: 7Q04 LA-78 SIP10H
Contextual Info: ¡No. 1835A = ^ m m w -= L-x 3 / J.- .- X 8230 Na «í 1835 t £ L A 'X .X < t¿ LA7831-^_r? * S ' •>'y ? ') - r m t 0 » L A 7 8 3 lû t, * □ « * 9 ~ t*U tíSi»BrSrtÜ*lM* / '/ i/ >y* / / > 1ß'PU <|gätÄ1fcflT& í ■ t'-r ♦-ÿa 1C L A 7 j Í¿ 0

Contextual Info: DCR1830F22 Phase Control Thyristor Preliminary Information DS5866-2 November 2009 LN26930 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2200V 1835A 24500A 1500V/µs 300A/µs * Higher dV/dt selections available

DCR1830F22

Abstract: DCR1830F18 DCR1830F20
Contextual Info: DCR1830F22 Phase Control Thyristor Preliminary Information DS5866-1.1 August 2007 LN25532 KEY PARAMETERS FEATURES Double Side Cooling VDRM IT(AV) ITSM dV/dt* dI/dt High Surge Capability APPLICATIONS 2200V 1835A 24500A 1500V/µs 300A/µs * Higher dV/dt selections available

415v two phase welding machine str CIRCUIT DIAGRAM

Abstract: shell tellus c10 oil toroid international ltd P/N TT63-630 shell tellus c10 oil data sheet 33-20l capacitor
Contextual Info: ELMARK Has been a registered trademark for Europe since the year of 2000 and is part of the international company ELMARK HOLDING SC. Our company is licensed for the manufacture of the full range of professional low-voltage electrical equipment. The Headquarters of ELMARK HOLDING AD are situated in Varna, Bulgaria. There is our logistics center which

LT8900

Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Contextual Info: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array

thyristor 1100A

Contextual Info: DCR1830F22 Phase Control Thyristor Preliminary Information DS5866-1.0 September 2005 LN24195 FEATURES • Double Side Cooling • High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS • High Power Drives • High Voltage Power Supplies

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Contextual Info: AP9A437 semiconductor 256 x 36 x 2 Synchronous BiFlFO Features request, and read/write control signals. At the maximum operating frequency, the clock duty cycle may vary from 40 to 60%. At lower frequencies, the clock waveform may be quite asymmetric, as long as the minimum pulse-width con­

BMA16X16

Contextual Info: SI GE C P L E S S E Y MARCH 1997 S E M I C O N D U C T O R S CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. Improvements in design combined with

1N1373R

Abstract: 10191RA 1N600 1N1052 1N1059 3AF1 1N1056 1N1695 ZENER 18-2 5t HVC1800
Contextual Info: JEDEC TO SARKES TARZIAN RECTIFIER CROSS REFERENCE Jedec No. S. T. Type No. 1N248 1N248A 1N248B 1N248C 1N249 1N249A 1N249B 1N249C 1N250 1N250A 1N250B 1N250C ST3A10P ST410P ST410P ST410P ST3A10P ST410P ST410P ST420P ST3A20P ST420P ST420P ST420P 1N253 1N254 1N255

8007B

Abstract: 6111A hp 5328a HP 5004a 1809A 3476a 1805a Data Display 7474
Contextual Info: SECTION IV PERFORMANCE TESTS 4-1. INTRODUCTION 4-2. Th e procedures in this section test the instrument's electrical perform ance using the specifications of Table 1-1 as the perform ance standards. A ll tests can be perform ed without access to the interior of the 5004A. A simpler operational test is included in Section III under