MAX1452EVKIT-NS
Abstract: No abstract text available
Text: 19-1829; Rev 1; 6/01 KIT ATION EVALU E L B A AVAIL Low-Cost Precision Sensor Signal Conditioner The MAX1452 architecture includes a programmable sensor excitation, a 16-step programmable-gain amplifier PGA , a 768-byte (6144 bits) internal EEPROM, four 16-bit DACs, an uncommitted op amp, and an onchip temperature sensor. In addition to offset and span
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40mV/V
16-Bit
MAX1452
MAX1452
MAX1452AAE-T
MAX1452AAE
MAX1452AAE+
MAX1452C
MAX1452EVKIT-NS
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motorola op amp with input resistance of 1.67
Abstract: resistive Humidity Sensor MAX1452 MAX1452AAE MAX1452CAE MAX1452EAE
Text: 19-1829; Rev 1; 6/01 KIT ATION EVALU E L B A AVAIL Low-Cost Precision Sensor Signal Conditioner The MAX1452 architecture includes a programmable sensor excitation, a 16-step programmable-gain amplifier PGA , a 768-byte (6144 bits) internal EEPROM, four 16-bit DACs, an uncommitted op amp, and an onchip temperature sensor. In addition to offset and span
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MAX1452
16-step
768-byte
16-bit
16-pin
MAX1452
motorola op amp with input resistance of 1.67
resistive Humidity Sensor
MAX1452AAE
MAX1452CAE
MAX1452EAE
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Untitled
Abstract: No abstract text available
Text: 19-1829; Rev 1; 6/01 KIT ATION EVALU E L B A AVAIL Low-Cost Precision Sensor Signal Conditioner The MAX1452 architecture includes a programmable sensor excitation, a 16-step programmable-gain amplifier PGA , a 768-byte (6144 bits) internal EEPROM, four 16-bit DACs, an uncommitted op amp, and an onchip temperature sensor. In addition to offset and span
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40mV/V
16-Bit
MAX1452
MAX1452
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Untitled
Abstract: No abstract text available
Text: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV21 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYL E
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BLV21
BLV21
10dBat15W/175MHz
S125NOM
3804LFLG
175MHz
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BLW76
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLW76 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW76 is Designed for use in class-AB orclass-B operated high power transmitters in the H.F. and
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BLW76
BLW76
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t 1829
Abstract: buzer F14E E0C63158 E0C63256 E0C63358 S1C63557
Text: MF1106-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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MF1106-03
S1C63557
S1C63557
F-91976
E-08190
t 1829
buzer
F14E
E0C63158
E0C63256
E0C63358
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buzer
Abstract: E0C63158 E0C63256 E0C63358 S1C63557
Text: MF1106-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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MF1106-03
S1C63557
S1C63557
buzer
E0C63158
E0C63256
E0C63358
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PDF
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Untitled
Abstract: No abstract text available
Text: MF1106-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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MF1106-02
S1C63557
S1C63557
E-08190
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PDF
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Untitled
Abstract: No abstract text available
Text: ADP1821 Reference Design FCDC00093 Preliminary Technical Data FEATURES Single Output Voltage: 5.0 V Output Current: 1.4 A Input voltage: 9 V to 20 V Ripple <1% ppk of Output Voltage Transient step ±5%, 50% max load ADP1821 REFERENCE DESIGN DESCRIPTION This ADP1821 Reference Design uses a 9 to 20 V input voltage to generate a 5.0 V output voltage VOUT1 with a maximum
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ADP1821
FCDC00093
ADP1821.
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2160 transistor
Abstract: GSP7427 GSP7427-89 RO4003 C 2120 Y unmatched bare amplifier W-335 L381
Text: GSP7427-89 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order
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GSP7427-89
GSP7427-89
100MHz
150mA
2160 transistor
GSP7427
RO4003
C 2120 Y
unmatched bare amplifier
W-335
L381
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MMG3006NT1
Abstract: ECUV1H150JCV FR408 1008CS-150XJB AN1955 C0603C103J5RAC erj8geyj101 z667 CRCW06030000FKEA AVX Manufacture Label
Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 3, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,
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MMG3006NT1
MMG3006NT1
ECUV1H150JCV
FR408
1008CS-150XJB
AN1955
C0603C103J5RAC
erj8geyj101
z667
CRCW06030000FKEA
AVX Manufacture Label
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,
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MMG3006NT1
MMG3006NT1
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MMG3006NT1
Abstract: AVX Manufacture Label ECUV1H150JCV
Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,
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MMG3006NT1
MMG3006NT1
AVX Manufacture Label
ECUV1H150JCV
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Untitled
Abstract: No abstract text available
Text: SIEMENS • Ö235b05 D0TDflb3 OTfl PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN Type Marking Ordering Code (tape and reel)
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235b05
Q68000-A6479
Q68000-A6483
OT-23
EHP00878
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UF2840G
Abstract: transistor C 245 b
Text: P i com pany RF MOSFET Power Transistor, 40W, 28V 100-500 MHZ UF2840G - A - B » Features f— H— j • N -Channel E n h an cem en t M ode D evice I I • DM OS Structure • Low er C ap acitan ces for B roadb an d O p eratio n
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UF2840G
72APACITOR
1000pF
2-500pF
500pF
UF2840G
transistor C 245 b
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 00BSfl57 bQ5 H A P X N AMER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D _ J SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.
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bbS3T31
00BSfl57
PMBT2907
PMBT2907A
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L7E transistor
Abstract: PMBT2907A PMBT2907 1N916
Text: • 1^53^31 002SÖS7 bD5 H A P X N AUER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.
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PMBT2907
PMBT2907A
PMBT2907
bbS3T31
PMBT2907A
1N916
L7E transistor
1N916
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diode sg 87
Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Text: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate
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SGSP101/P102
SGSP201/P202
301/P30Z
SP301
SP302
E--03
SGSP101/P102
SGSP301/P302
1728J
diode sg 87
P302T
SGSP101
GS3J
P302
SGSP
sgsp302
p102
capacitance SG 21
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2SC1811
Abstract: 2SA896 138D 2SA1015
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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250nS
190nS
2SC1811
2SA896
138D
2SA1015
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHX6ND50E
PHX6ND50E
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PDF
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zener diode 7c3
Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
Text: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255/D
2PHX34608Q
zener diode 7c3
electrolytic capacitor 470
Nippon capacitors
MRF255 equivalent
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PDF
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Motorola AN-546
Abstract: MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application
Text: 1EE D I b3b 72 54 00fl7fc.?fc> M | MOTOROLA SC MOTOROLA r'33-/r X STR S/R SEM ICO NDUCTOR TECHNICAL DATA MRF460 T h e R F L in e 40 W PEP - 3 0 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for applications as a high-power linear ampli
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00fl7fc.
33-/r
MRF460
2N6368
RF460
AN-282A.
AN-546.
Motorola AN-546
MRF460
an-546 motorola
AN282A
motorola application note AN-546
AN546
2N6368
2648A
str 2652
motorola an-282a application
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Si-M M IC-Am plifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Cl block LNA / MIX • Unconditionally stable • Gain IS2-|I2 = 18.5 dB at 1.8 GHz (appl.1) gain IS21I2 = 22 dB at 1.8 GHz (appl.2) /p3out = +7 dBm at 1 8 GHz ( ^D=3V,/D=9.5mA)
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25-Technologie
IS21I2
OT-363
de/Semiconductor/products/35/35
235b05
fl535b05
015252t)
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PDF
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Untitled
Abstract: No abstract text available
Text: S G S-THOMSON Q7C D | 7 ^ ^ 2 3 7 u u s/m u s IN T E G R A T E D f f f f B e fv CIRCUIT QD14fleia fl I h c c /h c f « •• . 7929225 S G S : ^ ic S E M IC O N D U C T O R 0 8 9 0 6 i b ] j d T - V 3 '2 ^ / CORP EXPANDABLE 4-WIDE 2-INPUT A N D-O R-IN VERT GATE
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QD14fle
D--07
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PDF
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