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    AQW210EH

    Abstract: AQW210EHA AQW212EH AQW212EHA AQW214EH AQW214EHA AQW216EH
    Text: GU-E PhotoMOS AQW21PEH TESTING General use and economy type. DIP (2 Form A) 8-pin type. Reinforced insulation 5,000V type. FEATURES 6.4 .252 9.86 .388 GU-E PhotoMOS (AQW21PEH) 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 1. Reinforced insulation 5,000 V type


    Original     		AQW21 EN41003, EN60950 AQW216EH AQW210EH AQW214EH AQW212EH aqw21eh: 181206J AQW210EH AQW210EHA AQW212EH AQW212EHA AQW214EH AQW214EHA AQW216EH PDF

    AQY212G2S

    Abstract: AQY212G2SX AQY212G2SZ AQY212GS AQY212GSX AQY212GSZ
    Text: GU PhotoMOS AQY212GS, AQY212G2S VDE (AQY212GS) (AQY212GS) Load current greatly increased using next-generation MOSFET High Capacity 4-pin Type 4.3 .169 4.4 .173 2.1 .083 mm inch 1 4 2 3 GU PhotoMOS (AQY212GS, AQY212G2S) FEATURES TYPICAL APPLICATIONS 1. Greatly increased load current in


    Original     		AQY212GS, AQY212G2S) AQY212GS) AQY212GS AQY212G2S aqy212gs: AQY212G2S AQY212G2SX AQY212G2SZ AQY212GS AQY212GSX AQY212GSZ PDF

    AQV251

    Abstract: AQV257 AQV258 AQV251A AQV252 AQV253 AQV254 AQV255 AQV259
    Text: HE PhotoMOS AQV25P (Standard type) 6.4 .252 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 (Reinforced type) HE PhotoMOS (AQV25P) High sensitivity and low on-resistance. DIP (1 Form A) 6-pin type. 8.8 .346 TESTING FEATURES TYPICAL APPLICATIONS 1. Highly sensitive and low onresistance


    Original     		AQV25 AQV259; AQV253H AQV251, AQV252 AQV253 AQV254 aqv25: 181206J AQV251 AQV257 AQV258 AQV251A AQV252 AQV255 AQV259 PDF

    DS_X615_EN_AQY221N1S

    Abstract: AQY221N1S AQY221N1SX AQY221N1SZ
    Text: RF PhotoMOS AQY221N1S Lower output capacitance and on resistance. (CR20) High speed switching. (Turn on time: 0.04ms, Turn off time: 0.06ms). 4.4 .173 2.1 .083 4.3 .169 mm inch 1 4 2 3 RF PhotoMOS (AQY221N1S) FEATURES TYPICAL APPLICATIONS 1. Low output capacitance between


    Original     		AQY221N1S) 120mA aqy221n1s: 181206J DS_X615_EN_AQY221N1S AQY221N1S AQY221N1SX AQY221N1SZ PDF

    2 form c ssr

    Abstract: aqw214ax AQW216 ssr schematic circuit AQW212 AQW212A AQW212AX AQW212AZ AQW214 AQW215
    Text: GU PhotoMOS AQW21P Compact DIP (2 Form A) 8-pin type. Controls load voltage 60V to 600V. FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 3.6 .142 9.78 .385 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L)


    Original     		AQW21 AQW212 AQW215 AQW216 AQW210 AQW214 AQW216 AQW210 AQW217 2 form c ssr aqw214ax ssr schematic circuit AQW212 AQW212A AQW212AX AQW212AZ AQW214 AQW215 PDF

    PhotoMOS Relay

    Abstract: AQY210KS AQY210KSX AQY210KSZ
    Text: GU PhotoMOS AQY210KS TESTING Short circuit protection (Latch type). 4.3 .169 4.4 .173 2.1 .083 mm inch 1 4 2 3 GU PhotoMOS (AQY210KS) FEATURES TYPICAL APPLICATIONS 1. Short circuit protection (Latch type) When the output current exceeds a fixed amount, it is cut and the off state is


    Original     		AQY210KS) 120mA aqy210ks: 181206J PhotoMOS Relay AQY210KS AQY210KSX AQY210KSZ PDF

    AQW224N

    Abstract: AQW224NA AQW224NAX AQW224NAZ AQW227N AQW227NA AQW227NAX AQW227NAZ
    Text: RF PhotoMOS AQW22PN Lower output capacitance and on resistance. High speed switching. (Turn on time: 0.2ms, Turn off time: 0.08ms). FEATURES 6.4 .252 9.78 .385 RF PhotoMOS (AQW22PN) 3.9±0.2 .154±.008 6.4 .252 9.78 .385 1. PhotoMOS relay 2-channels (Form


    Original     		AQW22 AQW224N AQW227N aqw22n: 181206J AQW224N AQW224NA AQW224NAX AQW224NAZ AQW227N AQW227NA AQW227NAX AQW227NAZ PDF

    AQW610EH

    Abstract: AQW610EHA AQW612EH AQW612EHA AQW614EH AQW614EHA
    Text: VDE GU-E PhotoMOS AQW61PEH TESTING (AQW610EH, 614EH) (AQW612EH) General use and economy type. DIP (1 Form A/1 Form B) 8-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQW61PEH) FEATURES 6.4 .252 3.2 .126 9.86 .388 1. 60V type couples high capacity


    Original     		AQW61 AQW610EH, 614EH) AQW612EH) AQW610EH AQW612EH AQW614EH AQW610EHA AQW612EH AQW612EHA AQW614EH AQW614EHA PDF

    AQY412EHA

    Abstract: 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
    Text: VDE GU-E PhotoMOS AQY41PEH TESTING (AQY410EH, 414EH) (AQY412EH) General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 The attainment of economical pricing will


    Original     		AQY41 AQY410EH, 414EH) AQY412EH) AQY410EH AQY412EH AQY414EH AQY412EH AQY410EH AQY412EHA 414EH AQY410EHA AQY414EH AQY414EHA PDF

    AQY212GH

    Abstract: AQY212GHA AQY212GHAX AQY212GHAZ
    Text: GU PhotoMOS AQY212GH VDE Load current greatly increased using next-generation MOSFET High Capacity 4-pin Type 4.78 .188 4.78 .188 6.4 .252 3.2 .126 6.4 .252 2.9 .114 mm inch (Height includes standoff) 1 4 2 3 GU PhotoMOS (AQY212GH) FEATURES TYPICAL APPLICATIONS


    Original     		AQY212GH) aqy212gh: 181206J AQY212GH AQY212GHA AQY212GHAX AQY212GHAZ PDF

    AQV252GA

    Abstract: AQV252G AQV252GAX AQV252GAZ
    Text: HE PhotoMOS AQV252G VDE Load current greatly increased using next-generation MOSFET High Capacity 6-pin Type 6.4 .252 3.9 .154 8.8 .346 6.4 .252 3.6 .142 8.8 .346 (Height includes standoff) HE PhotoMOS (AQV252G) FEATURES TYPICAL APPLICATIONS 1. Greatly increased load current in


    Original     		AQV252G) aqv252g: 181206J AQV252GA AQV252G AQV252GAX AQV252GAZ PDF

    225R1 photomos relay

    Abstract: AQY222R1S AQY225R2S 225R1 AQY225R1SX AQY225R1S
    Text: RF PhotoMOS AQY22PRPS 60 to 80V load voltage type, lower output capacitance and on resistance. (CR) 4.3 .169 4.4 .173 2.1 .083 mm inch 1 4 2 3 RF PhotoMOS (AQY22PRPS) FEATURES TYPICAL APPLICATIONS 1. Low output capacitance between output terminals, and low ONresistance (Load voltage: 60 to 80V)


    Original     		AQY22 AQY222R1S AQY225R1S AQY225R2S 4QY225R1S AQY225R1S AQY222R1S 181206J 225R1 photomos relay AQY225R2S 225R1 AQY225R1SX PDF

    AQV212SX

    Abstract: AQV212S AQV210SX AQV212SZ AQV214S AQV214SX AQV215SX AQV216SX AQV217SX
    Text: GU PhotoMOS AQV21PS Super miniature design, SOP(1 Form A) 6-pin type. Controls load voltage 60V to 400V GU PhotoMOS (AQV21PS) FEATURES 6.3 .248 4.4 .173 2.1 .083 mm inch 1 6 2 5 3 4 1. 1 channel (Form A) in super miniature design The device comes in a super-miniature


    Original     		AQV21 AQV216S AQV215S AQV214S AQV210S AQV217S AQV212S AQV212S AQV212SX AQV210SX AQV212SZ AQV214S AQV214SX AQV215SX AQV216SX AQV217SX PDF

    DS_X615_EN_AQV221N

    Abstract: AQV221N AQV221NA AQV221NAX AQV221NAZ
    Text: RF PhotoMOS AQV221N Lower output capacitance and on resistance. High speed switching. (Turn on time: 0.2ms, Turn off time: 0.08ms). 6.4 .252 3.9 .154 8.8 .346 6.4 .252 3.6 .142 8.8 .346 mm inch 1 6 2 5 3 4 RF PhotoMOS (AQV221N) FEATURES TYPICAL APPLICATIONS


    Original     		AQV221N) 250mA 150mA aqv221n: 181206J DS_X615_EN_AQV221N AQV221N AQV221NA AQV221NAX AQV221NAZ PDF

    AQY210HLAZ

    Abstract: AQY210HL AQY210HLA AQY210HLAX
    Text: GU PhotoMOS AQY210HL TESTING Current Limit Function. DIP(1 Form A) 4-pin type. Reinforced insulation 5,000V type. GU PhotoMOS (AQY210HL) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 1. Current Limit Function To control an over current from flowing,


    Original     		AQY210HL) aqy210hl: 181206J AQY210HLAZ AQY210HL AQY210HLA AQY210HLAX PDF

    AQY210S

    Abstract: AQY210SX AQY210SZ AQY212S AQY212SX AQY212SZ AQY214S AQY214SX AQY214SZ
    Text: GU PhotoMOS AQY21PS TESTING Super miniature design, SOP(1 Form A) 4-pin type Controls load voltage 60V, 350V, 400V The device comes in a super-miniature SO package 4-Pin type measuring (W)4.3 x (L)4.4 × (H)2.1 mm (W).169 × (L).173 × (H).083 inch —approx. 70% of


    Original     		AQY21 AQY214S AQY210S AQY214S, AQY212S AQY210S AQY210SX AQY210SZ AQY212S AQY212SX AQY212SZ AQY214S AQY214SX AQY214SZ PDF

    AQV210E

    Abstract: AQV210EA AQV210EH AQV210EHA AQV214E AQV214EA AQV214EH AQV214EHA
    Text: GU-E PhotoMOS AQV210E, AQV21PEH (Standard type) General use and economy type. DIP (1 Form A) 6-pin type. Reinforced insulation 5,000V type. TESTING (Reinforced type) GU-E PhotoMOS (AQV21PE, AQV21PEH) FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346


    Original     		AQV210E, AQV21 AQV210EH, AQV214EH aqv21e: 181206J AQV210E AQV210EA AQV210EH AQV210EHA AQV214E AQV214EA AQV214EH AQV214EHA PDF

    AQY221N2S

    Abstract: AQY221N2SX AQY221N2SZ AQY221R2S AQY221R2SX AQY221R2SZ
    Text: RF PhotoMOS AQY221P2S Lower output capacitance (C type) and on resistance (R type). (CR10) High speed switching. (C type: Turn on time: 0.03ms, Turn off time: 0.03ms). 4.3 .169 4.4 .173 2.1 .083 4.3 .169 <R type> 4.4 .173 2.1 .083 <C type> FEATURES TYPICAL APPLICATIONS


    Original     		AQY221 250mA 181206J AQY221N2S AQY221N2SX AQY221N2SZ AQY221R2S AQY221R2SX AQY221R2SZ PDF

    AQV10

    Abstract: AQV101 AQV101A AQV102 AQV102A AQV103 AQV103A AQV104 AQV104A AQV20
    Text: HF PhotoMOS AQV10 , 20 High sensitivity and low on-resistance. DIP (1 Form A) 6-pin type. HF PhotoMOS (AQV10 , 20 ) FEATURES 8.8 .346 6.4 .252 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 1 6 2 5 2 5 3 4 3 4 (AQV10 series) (AQV20 series) 1. Controls low-level analog signals


    Original     		AQV10 AQV10 AQV20 optoelectronQV101 AQV103 AQV204 AQV201 AQV202 AQV203 AQV101 AQV101A AQV102 AQV102A AQV103 AQV103A AQV104 AQV104A PDF

    AQZ102

    Abstract: AQZ104 AQZ105 AQZ107 AQZ202 AQZ204 AQZ205 AQZ207 IN 400 DC
    Text: Power PhotoMOS AQZ10P, 20P High capacity PhotoMOS Relay. (Load current Max. 4A) DC load type is available. 3.5 .138 21 .827 12.5 .492 mm inch 1 2 – 3 + 4 AC/DC type 1 – 2 3 + – 4 + DC type Power PhotoMOS (AQZ10P, 20P) FEATURES TYPICAL APPLICATIONS


    Original     		AQZ10 181206J AQZ102 AQZ104 AQZ105 AQZ107 AQZ202 AQZ204 AQZ205 AQZ207 IN 400 DC PDF