eh 688-002
Abstract: No abstract text available
Text: Artikel-Verzeichnis Index o f p arts Artikel-Nummer Part number Seite Page 16 17 17 17 16 16 17 16 16 17 18 19 19 18 19 19 18 19 19 16 16 18 18 16 16 16 18 18 18 16 16 18 18 500 EHQ 517 EHQ 518 EHQ 519 EHQ 520 EHQ 524 EHY 524 EHQ 537 EHY 557 EHY 558 EHQ 560
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Untitled
Abstract: No abstract text available
Text: RAD I ALL '• r n 18 GHz OPTIONS INDICATOR TECHNICAL DATA SHEET SMA LATCHING R 5 7 3 452420 S.P.4T. /SELF CUT-OFF / TTL DRIVE Page SWITCH 1 12 /SUPP.DIODES R F CHARACTERISTICS :4 :0 - 18 GHz :50 Ohms FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= ISOLATION
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Untitled
Abstract: No abstract text available
Text: RAD I ALL 18 GHz R 5 7 7 452 1 0 0 TECHNICAL DATA SHEET Microwave components SMA LATCHING TRANSFER Page SWITCH 112 OPTIONS:/SELF CUT-OFF I TTL DRIVE R F CHARACTERISTICS | FREQUENCY RANGE IMPEDANCE : 0 - 18 GHz : 50 Ohms 3 - 8 8 -12.4 1.20 1.30 1.40 1.50
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IC51-3044-1471-2
Abstract: IC51-3044 DT-QFE304SA-P-N-01 A304
Text: 3.130" 18 x 18 array after assembly 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U V Pin 1 2.600" Top View Bottom View after assembly 1.165" 1 2 2 0.045" Side View 0.445" 0.100" 2 0.018"±0.001" Description: DUT Adaptor: Converts a 304 pin ZIF socket to 18 x 18 Pin Grid Array Uses Yamaichi socket IC51-3044-1471-2
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IC51-3044-1471-2)
DT-QFE304SA-P-N-01
Fr4/G10
finish10µ
IC51-3044-1471-2
IC51-3044
A304
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L R 5 8 5 452010 TECHNICAL DATA SHEET SMA 18GHz LATCHING D.P.3.T. Page 1/ 2 SWITCH OPTIONS/SELF CUT-OFF R F CHARACTERISTICS : 0 - 18 GHz : 50 Ohms 1 o to right the 8 -12.4 12.4- 18 1.20 1.30 1.40 1.50 0.20 dB 0.30 dB 0.40 dB 0.50 dB >= 80 dB
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18GHz
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L R 5 8 5 452200 TECHNICAL DATA SHEET 500 TERMINATED 18 GHz SMA LATCHING D.P.3.T. Page 1/ 2 SWITCH OPTIONS/SELF CUT-OFF R F CHARACTERISTICS to right the 8 -12.4 12.4- 18 1.20 1.30 1.40 1.50 0.20 dB 0.30 dB 0.40 dB 0.50 dB >= 80 dB 70 dB 60 dB
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COMMO9012
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17J-9
Abstract: No abstract text available
Text: To: Hilda S t ancato r>frAWIMtf_KA06 N t H iftn ANGLE T H I S OSAUINR trom: filli' tflX iu -i b - u u J r UB p m p. B or i 10- 18-00 trom: A M P t'AX To: Hilda St an c a t o 3 :08p m p. 9 of 18 PR O JE C TIO N IS liNPtjRl I5 H F O . | ft P lF A ^ F n Ff)0 PURI l r ' A f l n N
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OSb1-021
OG51-0260-98
06-3E06
e/ssrv026d/dsfc
l/dept4l00/aiç
876/ednfrt>
17J-9
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IC 74175
Abstract: 74175 flip flops
Text: •'?O 7 ^ 3 CD40175B Types À- CMOS Quad ‘D’-Type Flip-Flop High-Voltage Types (20-Volt Rating Feature*: 100% tested to r quiescent current at 20 V M axim um in p u t c u rre n t o f 1 tuA at 18 V o v e r f u l l p a c k a g e tem perature range; 100 nA at 18 V
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CD40175B
20-Volt
CD40175BH.
IC 74175
74175 flip flops
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KB3310
Abstract: RTM875N-606-VD-GR KB3310QF RTM875N-606-VD-GRT KB3310QF-B0 WISTRON power sequence RTM875N-606 JMB385 TPS51125 schematic acer lcd backlight inverter
Text: 5 4 3 2 Eiger Block Diagram 3D3V_S5 23 SYSTEM DC/DC TOP 667/800MHz 667/800/1067MHz@1.05V 15 AGTL+ CPU I/F HDMI DDR Memory I/F DDR2 DIMM2 18 INTEGRATED GRAHPICS 667/800MHz LVDS, CRT I/F PCIex16 13 6,7,8,9,10,11 X4 DMI 400MHz INT.MIC 35 Line In MXM CONN 30 C-Link0
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4Z501
TPS51125
RTM875N-606-VD
EMC2102
TPS51124
667/800MHz
667/800/1067MHz
RT9026
KB3310
RTM875N-606-VD-GR
KB3310QF
RTM875N-606-VD-GRT
KB3310QF-B0
WISTRON power sequence
RTM875N-606
JMB385
TPS51125
schematic acer lcd backlight inverter
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Untitled
Abstract: No abstract text available
Text: RADI ALL TECHNICAL DATA SHEET Microwave components 18 GHz OPTIONS : SMA INDICATOR LATCHING R573 452320 S.P.3T. /SELF CUT-OFF / TTL DRIVE Page 1/ 2 SWITCH /SUPP.DIODES R F CHARACTERISTICS | INUMdth Ul- 3 0 - 1 8 GHz 50 Ohms WATO FREQUENCY RANGE IMPEDANCE
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Untitled
Abstract: No abstract text available
Text: Ironwood Electronics, Inc. PO Box 21151 • St Paul, MN 55121 • 651 452-8100 • Fax (651) 452-8400 PA-QFE176SA-P-S-01Map Rev A, 4/25/94 2 1 4 3 6 5 8 7 9 10 12 14 16 18 11 13 15 17 19 19 17 15 13 11 9 7 5 3 1 18 16 14 12 10 8 6 4 2 A B C D E F G H J K
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PA-QFE176SA-P-S-01Map
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Untitled
Abstract: No abstract text available
Text: IME D 'i n t e g r a t e d d e v i c e 4Ô2S771 G0Q3Ô17 4 • ~ rfisSSSX ' ' ’ " integratedDeviceTechndogyInc. ■ •" V- ’ - 1 K x 18-BIT CMOS BiFlFO ~ ' FEATURES: • Bi-directional Flrst-In/Flrst Out FIFO memory • Back-to-back 1 K x 18-bit F IF O organization
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2S771
18-BIT
T-V6-35
16-bit
32-bit
32-blt
IDT72521
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L 18GHz R 5 7 7 452010 TECHNICAL DATA SHEET Microwave components SMA LATCHING TRANSFER Page 1/ 2 SWITCH OPTIONS:/SELF CUT-OFF R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 18 GHz : 50 Ohms FREQUENCY GHz 0 V.S.W.R <=j INSERT. LOSS <=)
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18GHz
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Untitled
Abstract: No abstract text available
Text: |lllll| K Imiil1 .P RADI A L L 18GHz R 5 7 7 452000 TECHNICAL DATA SHEET Microwave components SMA LATCHING TRANSFER Page 1/ 2 SWITCH OPTIONS:/SELF CUT-OFF R F CHARACTERISTICS FREQUENCY GHz V.S.W.R <= CÛ : 0 - 18 GHz : 50 Ohms 1 FREQUENCY RANGE IMPEDANCE
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18GHz
R577452000
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Untitled
Abstract: No abstract text available
Text: W3 RADI ALL Microwave components R 5 8 5 452 100 TECHNICAL DATA SHEET SMA 18GHz LATCHING D.P.3.T. Page 1/ 2 SWITCH OPTIONS/SELF CUT-OFF / TTL DRIVE R F CHARACTERISTICS | FREQUENCY RANGE IMPEDANCE : 0 - 18 GHz : 50 Ohms ] 1 3 1.20 1.30 0.20 dB >= AVER. POWER *
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18GHz
800f-A
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23X23
Abstract: BGA 23X23 BGA 23X23 1 BGA zif socket 22X22 DT-BGA505A-P-Z-01
Text: 2.618" 2.600" BGA A1 PGA 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G 2 4 6 8 10 12 14 16 18 20 22 1 3 5 7 9 11 13 15 17 19 21 23 A B C D E F G H J K L M N P R T U V W Y AA AB AC 2.606" H J K L M 2.600" N P R T U V W Y AA AB 0.100"Typ.
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FR4/G10
finish10µ
23X23
22X22
DT-BGA505A-P-Z-01
BGA 23X23
BGA 23X23 1
BGA zif socket
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TA7921
Abstract: 150 watt hf transistor 12 volt rca 632 2N5993 rca transistor RCA rf power transistor 452 transistor 225/TA7921
Text: File No. 452 0UQB//D ^ow er Transistors Solid State Division 2N5993 18-W CW 8 8 -M H z E m itterBallasted Overlay Transistor Silicon N -P-N T ype for 12.5-Volt Applications in V H F Com m unications Equipm ent Features: • ■ ■ ■ ■ Emitter-ballasting resistors
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2N5993
88-MHz
SS-jV63RJ
2N5993
TA7921
150 watt hf transistor 12 volt
rca 632
rca transistor
RCA rf power transistor
452 transistor
225/TA7921
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Untitled
Abstract: No abstract text available
Text: RAD I ALL 18 GHz OPTIONS INDICATOR TECHNICAL DATA SHEET SMA LATCHING R 5 7 3 452425 S.P.4T. /SELF CUT-OFF / TTL DRIVE Page 11 2 SWITCH /SUPP.DIODES H F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 0 - 1 8 GHz 50 Ohms 0 - 3 3 - 8 1.20 1.30 1.40
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Untitled
Abstract: No abstract text available
Text: RAD I ALL '• r n 18 GHz OPTIONS INDICATOR TECHNICAL DATA SHEET SMA LATCHING R 5 7 3 452320 S.P.3T. /SELF CUT-OFF / TTL DRIVE Page 1 SWITCH 1 2 /SUPP.DIODES R F CHARACTERISTICS V.S.W.R <= INSERT. LOSS <= ISOLATION 0 - 3 1.20 1 I 0.20 dB I 8 -12.4 00 FREQUENCY GHz
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m28748
Abstract: MS2500-P2A22-61 13B00F1A 13E10L1A ms2500-p2A22 c00f1 M28748/13C00F1A M28748/14F00G1A M28748/13F00F1A
Text: MMM L-C-28748/13 & /14 / 4,5,7,9,11,14,18,20,26, 29,34,44,50,75 CONTACTS f Series M M M is described more comprehensively in our “ M M M " brochure. SIZE 22 CONTACTS Socket Pin Contacts Contacts Shown with guide hardware 18 Not in Mil Spec 20 Mil Spec
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L-C-28748/13
IL-C28748
M39029/34-440
M39029/35-441
MS2500-P2A22-61
MS2500-S2A22
m28748
13B00F1A
13E10L1A
ms2500-p2A22
c00f1
M28748/13C00F1A
M28748/14F00G1A
M28748/13F00F1A
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Untitled
Abstract: No abstract text available
Text: REVISIONS DESCRIPTION REV 01 o C DATE RELEASED R EVISED APPRDVED 3 /2 0 /9 8 PER GV 0S 14-0146-02 21MAY03 JGH TYP ELECTRICAL Nominal In p ed an ce lllhns 5D F re q u e n c y Range (GHz) DC t o I n t e r f a c e Dimensions 18 V o lt R ating (VRMS MAX) N/A
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21MAY03
90-fCGHz)
MIL-STD-202,
85D71
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ic LK 1628
Abstract: 6823a A/transistor+SI+6823A
Text: FAST CMOS 18-BIT REGISTER IDT54/74FCT16823AT/BT/CT/ET IDT54/74FCT162823AT/BT/CT/ET Integrated D evice Technology, Inc. DESCRIPTION: FEATURES: Th e F C T 16 8 2 3 A T /B T /C T /E T and F C T 162 8 2 3 A T /B T /C T / • Common features: - 0.5 M IC R O N C M O S Technology
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18-BIT
IDT54/74FCT16823AT/BT/CT/ET
IDT54/74FCT162823AT/BT/CT/ET
250ps
18-bit
IDT54/74FCT16823AT/BT/CT/ET,
162823AT/BT/CT/ET
16823B
ic LK 1628
6823a
A/transistor+SI+6823A
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Untitled
Abstract: No abstract text available
Text: .878 .162 MATING P LA N E — - — MOUNTING SURFACE ELECTRICAL Nominal Impedance Dhns 50 F re q u e n c y Range (GHz) DC t o 500 18 GHz In s e rtio n L o ss <dB MAX) ,03x \/f(GHz) RF L e a k a g e (dB MIN) (Fully Mated) V ib ra tio n MIL-STD-202, Method
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MIL-STD-202,
-348A
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Untitled
Abstract: No abstract text available
Text: —-375±:88i typ £LECTRONICS MFG. CORP .4 0 6 ± .0 1 0 5 /8 -2 4 -I U N E F -2B REF <n - .18 7 ± .0 1 0 .687 R E F - .0 2 7 MIN DIA WIRE HOLES 3 PLACES CABLE TRIMMING DIMENSIONS FERRULE DIA REF DIA REF •INSULATOR ^C A B LE BRAID 8 11 O' IT ST5M 1348NR 8F
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1348NR
IL-STD-348.
D1710
107304A
1107-304-A00E-*
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