Untitled
Abstract: No abstract text available
Text: CY7C1318CV18, CY7C1320CV18 18-Mbit DDR II SRAM 2-Word Burst Architecture 18-Mbit DDR II SRAM 2-Word Burst Architecture Features Configurations • 18-Mbit density 1 M x 18, 512 K × 36 CY7C1318CV18 – 1M × 18 ■ 267-MHz clock for high bandwidth CY7C1320CV18 – 512K × 36
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CY7C1318CV18,
CY7C1320CV18
18-Mbit
CY7C1318CV18
267-MHz
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Untitled
Abstract: No abstract text available
Text: CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow Through SRAM 18-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)
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CY7C1381D,
CY7C1381F
CY7C1383D,
CY7C1383F
18-Mbit
CY7C1381D/CY7C1381F/CY7C1383D/CY7C1383F
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3M Touch Systems
Abstract: No abstract text available
Text: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
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CY7C11461KV18,
CY7C11571KV18
CY7C11481KV18,
CY7C11501KV18
18-Mbit
CY7C11571KV18,
CY7C11501KV18
3M Touch Systems
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3M Touch Systems
Abstract: No abstract text available
Text: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • 18-Mbit density (2 M x 8, 2 M × 9, 1 M × 18, 512 K × 36)
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CY7C11661KV18,
CY7C11771KV18
CY7C11681KV18,
CY7C11701KV18
18-Mbit
CY7C11771KV18,
CY7C11701KV18
3M Touch Systems
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Untitled
Abstract: No abstract text available
Text: CY7C1313CV18 CY7C1315CV18 18-Mbit QDR II SRAM 4-Word Burst Architecture 18-Mbit QDR® II SRAM 4-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions CY7C1313CV18 – 1M x 18 •
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CY7C1313CV18
CY7C1315CV18
18-Mbit
CY7C1313CV18
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Untitled
Abstract: No abstract text available
Text: CY7C1312CV18 CY7C1314CV18 18-Mbit QDR II SRAM 2-Word Burst Architecture 18-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations • Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1312CV18 – 1M x 18
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CY7C1312CV18
CY7C1314CV18
18-Mbit
CY7C1312CV18
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 001-07160 Spec Title: CY7C1318CV18/CY7C1320CV18, 18-MBIT DDR II SRAM 2-WORD BURST ARCHITECTURE Sunset Owner: Jayasree Nayar NJY Replaced by: NONE CY7C1318CV18, CY7C1320CV18 18-Mbit DDR II SRAM 2-Word Burst Architecture 18-Mbit DDR II SRAM 2-Word Burst Architecture
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CY7C1318CV18/CY7C1320CV18,
18-MBIT
CY7C1318CV18,
CY7C1320CV18
CY7C1318CV18
267-MHz
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Untitled
Abstract: No abstract text available
Text: CY7C13101KV18, CY7C13251KV18 CY7C13121KV18, CY7C13141KV18 18-Mbit QDR II SRAM 2-Word Burst Architecture 18-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions
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18-Mbit
CY7C13101KV18,
CY7C13251KV18
CY7C13121KV18,
CY7C13141KV18
CY7C13101KV18
CY7C13251KV18
CY7C13121KV18
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Untitled
Abstract: No abstract text available
Text: CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture 18-Mbit QDR™-II SRAM 4-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions
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CY7C1311BV18,
CY7C1911BV18
CY7C1313BV18,
CY7C1315BV18
18-Mbit
CY7C1911BV18,
CY7C1315BV18
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Untitled
Abstract: No abstract text available
Text: CY7C1361C CY7C1363C PRELIMINARY 9-Mbit 256K x 36/512K x 18 Flow-Through SRAM Functional Description[1] Features • Supports 133-MHz bus operations The CY7C1361C/CY7C1363C is a 3.3V, 256K x 36 and 512K x 18 Synchronous Flowthrough SRAMs, respectively designed
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CY7C1361C
CY7C1363C
36/512K
133-MHz
CY7C1361C/CY7C1363C
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3M Touch Systems
Abstract: No abstract text available
Text: CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 18-Mbit QDR II+ SRAM 4-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • Separate independent read and write data ports
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18-Mbit
CY7C11611KV18,
CY7C11761KV18
CY7C11631KV18,
CY7C11651KV18
CY7C11761KV18,
CY7C11651KV18
3M Touch Systems
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KDZ10EV
Abstract: KDZ10V KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
Text: Surface Mount Zener Diodes 100mW 150mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 200mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 Marking Code Part No. BZX384-C2V4 BZX384-C2V7 BZX384-C3V0
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100mW
150mW
200mW
KDZ10EV
KDZ10V
KDZ11EV
KDZ12EV
KDZ13EV
KDZ15EV
KDZ16EV
KDZ18EV
KDZ20EV
KDZ22EV
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CY7C1312BV18-167BZC
Abstract: No abstract text available
Text: CY7C1312BV18 CY7C1314BV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth
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CY7C1312BV18
CY7C1314BV18
18-Mbit
CY7C1312BV18,
CY7C1314BV18
CY7C1312BV18-167BZC
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Untitled
Abstract: No abstract text available
Text: CY7C1312BV18 CY7C1314BV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth
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CY7C1312BV18
CY7C1314BV18
18-Mbit
CY7C1312BV18,
CY7C1314BV18
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CY7C1386D
Abstract: CY7C1387D
Text: PRELIMINARY CY7C1386D CY7C1387D 18-Mbit 512K x 36/1 Mbit x 18 Pipelined DCD Sync SRAM Functional Description[1] Features • Supports bus operation up to 250 MHz • Available speed grades are 250, 200 and 167 MHz • Registered inputs and outputs for pipelined operation
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CY7C1386D
CY7C1387D
18-Mbit
250-MHz
200-MHz
167-MHz
CY7C1386D
CY7C1387D
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Untitled
Abstract: No abstract text available
Text: UM10692 SSL2109ADB1105 - 120 V/18 W PAR38 high PF isolated LED driver demo board Rev. 1 — 9 April 2013 User manual Document information Info Content Keywords SSL2109ADB1105, flyback converter, high PF, PAR38 Abstract This document describes the operation of a 120 V/18 W non-dimmable
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UM10692
SSL2109ADB1105
PAR38
SSL2109ADB1105,
PAR38
SSL2109A
PAR30
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CY7C1386D
Abstract: CY7C1387D
Text: PRELIMINARY CY7C1386D CY7C1387D 18-Mbit 512K x 36/1 Mbit x 18 Pipelined DCD Sync SRAM Functional Description[1] Features • Supports bus operation up to 250 MHz • Available speed grades are 250, 200 and 167 MHz • Registered inputs and outputs for pipelined operation
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CY7C1386D
CY7C1387D
18-Mbit
250-MHz
200-MHz
167-MHz
CY7C1386D/CY7C1387D
CY7C1386D
CY7C1387D
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CY7C1470BV25
Abstract: No abstract text available
Text: CY7C1470BV25 CY7C1472BV25 72-Mbit 2 M x 36/4 M × 18 Pipelined SRAM with NoBL Architecture 72-Mbit (2 M × 36/4 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™
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CY7C1470BV25
CY7C1472BV25
72-Mbit
250-MHz
CY7C1470BV25
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CY7C1470BV25
Abstract: No abstract text available
Text: CY7C1470BV25 CY7C1472BV25 72-Mbit 2 M x 36/4 M × 18 Pipelined SRAM with NoBL Architecture 72-Mbit (2 M × 36/4 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™
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CY7C1470BV25
CY7C1472BV25
72-Mbit
CY7C1472BV25
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con2
Abstract: 2kbpo8m LM335Z BZX85C5V1 CON13 j6 con4 1N4148 b.a part 1 BZX85C16 STGB6NC60HD
Text: Motor Control RDK Revised: Tuesday, October 18, 2005 PowerBD-300 Revision: A1 SYSTEMS LAB M.Di Guardo G.Rasconà Bill Of Materials November 4,2005 15:19:51 Item Quantity Reference _ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
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PowerBD-300
100uF
100nF
1N4148
STTH106
STTH108)
BZX84C15
BZX85C5V1
BZX85C16
VIPER12ADIP
con2
2kbpo8m
LM335Z
BZX85C5V1
CON13
j6 con4
1N4148
b.a part 1
BZX85C16
STGB6NC60HD
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Untitled
Abstract: No abstract text available
Text: CY7C1370D, CY7C1372D 18-Mbit 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin-compatible and Functionally equivalent to ZBT™ ■ Supports 250-MHz Bus Operations with Zero Wait States ❐ Available speed grades are 250, 200, and 167 MHz
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CY7C1370D,
CY7C1372D
18-Mbit
36/1M
CY7C1370D
CY7C1372D
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CY7C1370D
Abstract: CY7C1372D G-383
Text: CY7C1370D CY7C1372D PRELIMINARY 18-Mbit 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™ • Supports 250-MHz bus operations with zero wait states — Available speed grades are 250, 225, 200, and
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CY7C1370D
CY7C1372D
18-Mbit
36/1M
250-MHz
CY7C1370D
CY7C1372D
CY7C1370D/CY7C1372D
G-383
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CY7C1470V25
Abstract: CY7C1472V25 CY7C1474V25 29T1
Text: CY7C1470V25 CY7C1472V25 CY7C1474V25 72-Mbit 2 M x 36/4 M × 18/1 M × 72 Pipelined SRAM with NoBL Architecture 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBLTM Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™
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CY7C1470V25
CY7C1472V25
CY7C1474V25
72-Mbit
250-MHz
CY7C1470V25
CY7C1472V25
CY7C1474V25
29T1
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BwC 110 Transistor
Abstract: CY7C1470BV25 CY7C1474BV25
Text: CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 72-Mbit 2 M x 36/4 M × 18/1 M × 72 Pipelined SRAM with NoBL Architecture 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™
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CY7C1470BV25
CY7C1472BV25,
CY7C1474BV25
72-Mbit
CY7C1470BV25,
CY7C1474BV25
BwC 110 Transistor
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