17SEP07 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. LPU COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION 5 4 2 3 - BY TYCO ELECTRONICS CORPORATION. REVISIONS DIST ALL RIGHTS RESERVED. 00 P LTR 03 DESCRIPTION R E V IS E D PER E C O - 07- 021880 DATE DWN APVD 17SEP07 DH RP HOUSING: POLYESTER, GRAY. UL 9 4 V - 0 .

Contextual Info: VLMRGB343. Vishay Semiconductors Multi SMD LED RGB FEATURES • High brightness tricolor SMD LED • RGB individual control • Compact package outline e3 • Black surface • Qualified according to JEDEC moisture sensitivity level 2 • Compatible to IR reflow soldering

Contextual Info: TLHE/G/K/P510. Vishay Semiconductors High Intensity LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Choice of four colors • TLH.5101 and TLH.5102 with reduced light matching factor • TLH.5100 for cost effective design • Medium viewing angle

SOT 143 footprint

Abstract: VMN-PT9045-0711 SCHEMATIC L
Contextual Info: Model MPD/ MPDA Key Benefits • 1:1 Resistance ratio 1 K to 100 K standard offering • Ratio Match: ± 0.05 % • Ratio Tracking: ± 2 ppm/ºC • Current Noise: < - 30 dB • Voltage Coefficient: < 0.1 ppm/V • Three resistor series connected customs available

TLHP5100

Abstract: TLHE5100 TLHG5100 TLHG5101 TLHG5102 TLHK51 TLHK5100 TLHP5101 TLHP5102
Contextual Info: TLHE/G/K/P510. Vishay Semiconductors High Intensity LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Choice of four colors • TLH.5101 and TLH.5102 with reduced light matching factor • TLH.5100 for cost effective design • Medium viewing angle

BD 669

Abstract: transistor BD 140 BD 149 transistor XB1008-BD XB1008-BD-000V XB1008-BD-EV1 DM6030HK TS3332LD
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD September 2007 - Rev 17-Sep-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias

a1710

Contextual Info: SPICE Device Model SiA421DJ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FOR P U B L IC A T IO N ALL B Y TYCO E L E C T R O N IC S R IG H T S RESERVED. C O R P O R A T IO N . "A’ 1.65 [.065] D A A TRAVEL MAX 2.48 [.097] TRAVEL TYP 3.00 [.1 18 ] 3.99 5.00 [.197] r [-1 5 7 ]

Contextual Info: TLHB420. Vishay Semiconductors High Efficiency Blue LED, ∅ 3 mm Tinted Non-Diffused Package FEATURES • • • • • • • • 19222 DESCRIPTION This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.

Buffer Amplifier Ghz

Abstract: B1007 bd 25 701 BD 329 DM6030HK TS3332LD XB1007-BD XB1007-BD-000V XB1007-BD-EV1
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD September 2007 - Rev 17-Sep-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

TLHB420

Abstract: TLHB4200 TLHB4201 blue led vishay
Contextual Info: TLHB420. Vishay Semiconductors High Efficiency Blue LED, ∅ 3 mm Tinted Non-Diffused Package FEATURES • • • • • • • • 19222 DESCRIPTION This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.

Si3458BDV

Contextual Info: SPICE Device Model Si3458BDV Vishay Siliconix N-Channel 60V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

1535 SD

Abstract: Si4890BDY
Contextual Info: SPICE Device Model Si4890BDY Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

TLHG5200

Abstract: TLHG5201 TLHG5205 TLHR5200 TLHR5201 TLHR5205 TLHY5200 TLHY5201 TLHY5205
Contextual Info: TLHG/R/Y520. Vishay Semiconductors High Efficiency LED, ∅ 5 mm Tinted Non-Diffused Package FEATURES • Choice of three bright colors • Standard T-1¾ package • Small mechanical tolerances • Suitable for DC and high peak current • Small viewing angle

tray 8 x 8

Abstract: shinon ST-bg0 FBGA package tray dwg 25A1 D257 SECTION tray 25 x 25 ST-BG080810TJ-1 ASTM-D-257
Contextual Info: Package Information Vishay Siliconix FBGA MLF 8 x 8 MM PACKAGE TRAY C 322.6 315.0 ST-BG080810TJ-1 PPE 92.1 B A 12.7 * 150 °C MAX. 10.35 12.80 FBGA 8 x 8 1.0 mm A TRAY MADE IN JAPAN 135.9 * SHINON B see Detail 25.4 3.8 1 2.5 11.0 8.25 7.40 7.0 6.1 20° (3°) 3

Contextual Info: TLHG/O/P/R/Y4900 Vishay Semiconductors High Efficiency LED in ∅ 3 mm Clear Package FEATURES • Choice of five bright colors • Standard ∅ 3 mm T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Very small viewing angle

SOT 143 footprint

Abstract: sot-143 vishay
Contextual Info: SURFACE MOUNT NETWORKS MPD/MPDA Vishay Thin Film Molded, SOT-143 Resistor Network FEATURES • • • • • Lead Pb -free available Tight Ratio Tolerances to 0.05 % ± 2 ppm Tracking Standard Values Stocked Standard SOT-143 Footprint Pb-free Available

Si7316DN

Abstract: si7316
Contextual Info: SPICE Device Model Si7316DN Vishay Siliconix N-Channel 60V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7186DP

Contextual Info: SPICE Device Model Si7186DP Vishay Siliconix N-Channel 80V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

mosfet 0018

Contextual Info: SPICE Device Model SUM90N03-2m2P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4660DY

Contextual Info: SPICE Device Model Si4660DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

UM0097 User manual STR71x firmware library About this manual

Abstract: ADC12 M24C08 TQFP144 TIM_TO_IT 71XT 71XM
Contextual Info: UM0097 User manual STR71x firmware library Introduction About this manual This document is the STR71x firmware library user manual. It describes the STR71x peripheral firmware library: a collection of routines, data structures and macros that cover the features of each peripheral.

TLHB420

Abstract: TLHB4200 TLHB4201
Contextual Info: TLHB420. Vishay Semiconductors High Efficiency Blue LED, ∅ 3 mm Tinted Non-Diffused Package FEATURES • • • • • • • • 19222 DESCRIPTION This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.

V30150C

Abstract: 89047
Contextual Info: New Product V30150C, VF30150C & VI30150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses