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    transistor 2SC2539

    Abstract: 2SC2539
    Text: 1 1 I 1 DESCRIPTION 2SC2539 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. OUTLINE DRAWING Dimensions in mm FEATURES @ High power gain: Gpe& 14.5dB @V o. = 13.5V, PO = 14W, f = 175MHr


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    PDF 2SC2539 175MHr 175MHt, T-31E transistor 2SC2539

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    Abstract: No abstract text available
    Text: , Unc. RF POWER TRANSISTOR 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHP band mobile radio


    Original
    PDF 2SC1946A 2SC1946A i10dB 175MHr 175MHz,