175CC Search Results

FSC10A60

Abstract: FSC10U120 2PIN FSC06A60 gsgb FSC10A120 FSC10U60
Contextual Info: SiCKy K s i f t • Tjw=175cC ^iiE fiBR 600V FRED m • 2 l$ & # P F C SiC 600V SBD • 'J J jJ V J - (SMPS) • i - * K 7 -T7 • V7 W t/V J - 4f tt y a n y - B S fia o S fiflc S tt SiC 600V SBD ^ tt6 0 0 V ig H il T e k liu n : 2 .OOC.S/s IFM=10A -d i/d t= 5 0 A /u «

SMP50N06-25

Abstract: TF65-30
Contextual Info: Tem ic SMP50N06-25 Siliconix N -C h a n n e l E n h a n c e m e n t-M o d e M O S F E T , 2 5 -m Q i* D S o n 175°C Maximum Junction Temperature Product Summary V(TOiD«S tv ) •teion) 60 0.025 50 T O -2 2 0 A B o It I o— >K DRAIN connected to TAB

M39006

Contextual Info: Index Wet Tantalum Capacitors • Mauor Y ü Commercial Types Elastomer Seal M ax C V per Unit Volume Low D C L Low DF Silver C a se D x L 3.3 m-F 6 to to 60 470 m F .1 1 5 X .3 0 0

westcode stud base diode SI 2

Abstract: 140ak
Contextual Info: TECHN IC AL WESTCODE SEMICONDUCTORS PUBLICATION D P40 IS S U E 1 March, 1ÖBO Stud-Base Silicon Rectifier Diodes Type PCN/PCR040 70amperes average: up to 1600 volts RATING S Maximum values at 175'5C Tj unless stated otherwise R A TIN G SVMBOL C O N D IT IO N S

5.1 home theatre circuit diagram

Abstract: 2.1 to 5.1 home theatre circuit diagram 5.1 home theatre basic diagram 5.1 home theatre diagram zigbee document 053474r06 version 1.0 5.1 home theatre assembling 4.1 home theater ic ZigBee Specification, Document 053474r06 home theater 5.1 circuit diagram bd 317 schema
Contextual Info: ZigBee Specification ZigBee Document 053474r06, Version 1.0 December 14th, 2004 Sponsored by: ZigBee Alliance Accepted by ZigBee Alliance Board of Directors. Abstract The ZigBee Specification describes the infrastructure and services available to applications operating on the ZigBee platform.

Contextual Info: /M /J X I/M Very Fast Buffer Am plifiers _Applications High Speed Line Drivers Video D rivers/Im pedance Transform ation Nuclear Instrum entation A m plifiers O perational A m p lifie r Isolation High Speed A to D Input Buffers Video Cross Point Switches

CFB0101

Contextual Info: - ££L "Ë T £K P ro d u c t S p e c ific a tio n s D ecem ber 1997 CFBOlOl Series General Purpose GaAs FETs 1 o f 2 F eatures □ H igh G ain □ 19 dB m P ow er O utput □ Ion Im p lan ted M aterial □ 70 M il Strip lin e C om m ercial P ackage

ULN2000

Abstract: ULN2000A VLN2000A ULN2800 UDN2980A VLN2800A 099-4
Contextual Info: RELIABILITY REPORT RELIABILITY OF SERIES ULN2000A AND VLN 2800A D ARLIN G TO N D RIVERS This report summ arizes accelerated-life tests that have been per­ form ed on Series ULN2000/2800A integrated circuits and provides information that can be used to calculate the failure rate at any junction

Contextual Info: _ I n t e r n a t io n a l R e c t if ie r m sa | Schottky Diodes VRRM Numbw_ Volt« (7) >F(AV)oTe V m tlF M A *C (Vota) (2) CAS mJ (3) (7 )H W » IAR A *«IV RW » ì (Amp») mA I!),» • * "« Mm -Tj •QW

Contextual Info: T e m ic SUP/SUB70N06-14 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary S fa m m i- f e tt» •s t a î â j r 60 0.014 70» TO-220AB g TO -263 D R A IN con n ected to TAB n G D S Top View SUB7QN06-14

AD8184AN

Abstract: AD8079 multi channel voltage scanner
Contextual Info: ANALOG DEVICES 700 MHz, 5 mA 4-to-1 Video Multiplexer _AD8184 FUNCTIONAL BLOCK DIAGRAM FEATURES Single and Dual 2-to-1 Also Available AD8180 and AD8182 Fully Buffered Inputs and Outputs Fast Channel Switching: 10 ns High Speed > 700 MHz Bandwidth (-3 dB)

IRF130 mosfet

Abstract: irf133 83AD IRF133 international rectifier and/IRF133 irf132
Contextual Info: HE D I 40 5 5 4 5 2 OGOTOSG 1 | Data Sheet No. PD-9.303H INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IO R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF130 IRF131 IRF132

qml-38535

Contextual Info: REVISIONS LTR DESCRIPTION Add device class V criteria. Add RHA data. Editorial changes throughout, jak DATE YR-MO-DA APPROVED 97-11-12 Monica L. Poelking REV SHEET REV A A A A A SHEET 15 16 17 18 19 REV STATUS OF SHEETS PMIC N/A REV A A A A A A A A A A A

CPT50060

Contextual Info: Schottky PowerMod CPT50060 D im. Min. V Baseplate A=Common Anode V Baseplate Common Cathode U f l 1 H 1- 1 " I - r F 1 r ^ ¡ u i- i o N | No , — r m In ch es Baseplate D=Doubler A B C E F G H N Q R U V W Max. -3.630 0.700 0.800 -0.680 0.120

forward and reverse connection Diagram of 3 phase

Abstract: active brake stop switch BLDC Motor FORWARD REVERSE DIAGRAM OF 3 PHASE MOTOR
Contextual Info: F /\IR C H II_D S E M IC O N D U C T O R w w w .fairchildsem i.co m tM KA3011BD 3-Phase BLDC Motor Driver Features • 3-phase, full-wave, linear BLDC m otor driver • Power save at stop mode • Built-in current limiter • Built-in TSD Therm al shutdown circuit

I-T2N2222

Abstract: 10 35L CAPacitor 2N2222 TRANSISTOR 10 35L DIODE REF195EP REF195 crossover circuits REF195FP REF195GP ad 620 using pressure measurement
Contextual Info: ANALOG DEVICES INC bSE D • GfllbflDQ 0 D 3 Ô T Û 7 PIN CONNECTIONS 8-Lead Narrow-Body SO S Suffix t p [T • | ] NC v+ [F 3 SHUTDOWN [7 GND [T REF-195 NC 1 ] VOUT | ] TP = NO CONNECT APPLICATIONS Portable Instrumentation Industrial Process Controllers

rg1560c

Contextual Info: ffì RURG1540CC, RURG1550CC, RURG1560CC HARRIS S E M I C O N D U C T O R 15A, 400V - 600V Ultrafast Dual Diodes A pril 1995 Features Package • Ultrafast with Soft R ecovery. <55ns JEDEC STYLE TO-247 • Operating Tem p eratu

1N6400

Abstract: 1N6404 RLI57 rl766 1N6408 RL501 1N4001 1N4002 RECTRON 1n4004 RL102
Contextual Info: RECTRON LTD E4E D • 7blDE4E 0000015 fl ■ T~OI~0 [ S ILIC O N RECTIFIERS OPERATING AND STORAGE TEMPERATURE -6 5 °C to +175°C TYPE • Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current

Contextual Info: r High-Speed 2:1 Analog Multiplexer APPLICATIONS: FEATURES typical : • • • • • • • • • in fra re d s y s te m m u ltip le x in g C C D s e n s o r s ig n a ls ra d a r l/Q sw itc h in g high d e fin itio n v id e o H D T V te s t a n d c a lib ra tio n

D0214AC SMA

Contextual Info: Ultra Fast Recovery Rectifiers ES1A - ES1D CATHODE BAR I I ]ij Dim. Inches I A B C D E F G H J I- H - O l— ! - c\ Millimeter Minimum Maximum Minimum Maximum Notes .078 .068 -.030 .065 .194 .157 .100 .115 .087 .005 .020 .060 .084

Contextual Info: A fa 5 Bit GaAs Digital Attenuator DC-2 GHz MADA2020G Features • Attenuation 1 dB Steps to 31 dB • Temperature Stability ±0.1 dB from -55° to +85°C Typical • Fast Switching Speed, 3 ns Typical to 90% VC2 + f VCS VC1 + *7 5 5 RF1^ ^ RF2 Guaranteed Specifications

SUB70N03-09P

Abstract: 70604
Contextual Info: SUP/SUB70N03-09P VISHAY Vishay Siliconix Y N-Ch 30-V D-S , 175°C, MOSFET PWM Optimized New Product PRO DUCT SUM M ARY R o s (o m ) (£2) ID (A) 0.009 VG S = 10 V ±70* 0.015 © V q s » 4.5 V ±55 V (BR}DM M 30 D O TO-220AB o TO-263 ì I— w DRAIN connected to TAB

Contextual Info: SPECIFICATION SHEET ISSUEING NUMBER : T8009 ISSUEING DATE : FEB.6,1998 RRODUCT NAME : VERTICAL TYPE “DIP” RESISTOR NETWORK FOR HIGH DENSITY ASSEMBLING SERIES NAME : RA-DH SERIES HIGHER HEIGHT TYPE RA-DL SERIES (LOWER HEIGHT TYPE) IAM ELECTRONICS CO., LTD.

NDB4060

Abstract: NDP4060
Contextual Info: July 1996 Nationa I Semiconductor " NDP4060/ NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS technology.