5bf1
Abstract: No abstract text available
Text: 7'!' !1 111231451631789A175BCD5CEF4C1F1 1 1 1 "36D#5391 23435671839A5BCDBE41 31 31 31 31 31 31 31 31 31 31 31 31 31 31 21BE745D7ED47C21 1D7117 C87C BED4C 1 4 BE!11234516B 48B1451ED17115BE4B5171A4 BE517BEB61
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Original
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111231451631789A175BCD5CEF
23435671839A5BCDBE41
234516789ABCD16B58E4FB51D3B15
D47C51
45D7ED47C2
11234516B
48B1451
15BE4B517
BE517
BEB61
5bf1
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PDF
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MSP14LV160
Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
Text: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ
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Original
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AF9708/09/09B/10/23
nearest09
AF9709B/09C
AF9723
AF9708
TE004-44PL-04
AF9709
MSP14LV160
MSP54LV100
MCF10P-128MS
70f3350GC
63a52
95f264k
HY27US08121B
MSP55LV128
MSP55lv512
fujitsu msp55lv512
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PDF
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AUO-M201.1F
Abstract: 871A K1195
Text: 7% %&'' 1 111231451631789A175BCD5CEF4C1F1 1 111113 61 1 1 1 1 $36D%5391 23435671839A5BCDBE41 31 31 31 31 31 31 31 31 31 31 31 31 31 31 31 21BE745D7ED47C21 1D7117 C87C BED4C 1
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Original
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111231451631789A175BCD5CEF
23435671839A5BCDBE41
234516789ABCD16B58E4FB51D3B15
D47C51
45D7ED47C2
11234516B
48B1451
15BE4B517
BE517
BEB61
AUO-M201.1F
871A
K1195
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PDF
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1751C
Abstract: No abstract text available
Text: AC 1751-C SERIES AXIAL FAN High Air Flow
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Original
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1751-C
1751C
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PDF
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SG30TC15M
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode • fl-tlH O U T L IN E S G 30T C 1 5 M 150V 30A Feature • Tj=1751C • Tj=175°C • High lo Rating • Full Molded • 1SIr=40|jA • Low Ir=40|jA • U lc x u • Resistance for thermal run-away Main Use • X 'f'yf-y'fM M
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OCR Scan
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SG30TC15M
FTO-220G
waveti50Hz-t
CJ533-1
SG30TC15M
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PDF
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diode T3 Marking
Abstract: SG10SC4 SG10SC4M DIODE t3
Text: Schottky Barrier Diode Twin Diode •fl- tlH O UTLINE SG10SC4M 40 V 10A Feature • Tj=1751C • Tj=175°C • Full Molded Main Use • Switching Regulator • DC/DC Z \ y jK - $ • DC/DC Converter • m m.'f-h. 0A#t§ • mm.rtt-sznmm • Home Appliance, Game, Office Automation
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OCR Scan
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SG10SC4M
FTO-220G
SG10SC4M
50Hz-C
diode T3 Marking
SG10SC4
DIODE t3
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PDF
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DIODE MARKING EJL
Abstract: DIODE EJL SG20TC15M SS81
Text: Schottky Barrier Diode Twin Diode • fl- tlH S G 20T C 15M OUTLINE Unit: mm Package : FTO-220G Weight L54g Typ 150V 20A 4.5 Feature • Tj=1751C • 1SIr=30|jA • U lc x u • • • • • Tj=175°C High lo Rating Full Molded Low Ir=30)jA Resistance for thermal run-away
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OCR Scan
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SG20TC15M
30jjA
FTO-220G
i50HzT
CJ533-1)
DIODE MARKING EJL
DIODE EJL
SG20TC15M
SS81
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PDF
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SG10SC6M
Abstract: marking XN
Text: Schottky Barrier Diode Twin Diode • fl- tlH OUTLINE SG10SC6M 60 V 10A Feature • Tj=1751C • Tj=175°C • Full Molded Main Use • Switching Regulator • DC/DC Z \ y j K - $ • DC/DC Converter • m m .'f- h . 0A#t§ • m m .rtt-s z n m m • Home Appliance, Game, Office Automation
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OCR Scan
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SG10SC6M
FTO-220G
50Hz-C
marking XN
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PDF
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SG10TC15M
Abstract: D 92 M - 02 DIODE c 92 M - 02 DIODE
Text: Schottky Barrier Diode Twin Diode • fl- tlH S G 10T C 1 5 M OUTLINE Unit: mm Package : FTO-220G Weight L54g Typ n?hSE»(09) 15 0 V 10A 4.5 Feature • Tj=1751C • Tj=175°C • Full Molded • I r=15|jA • Lo w Ir=15^ iA • Resistance for thermal run-away
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OCR Scan
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SG10TC15M
FTO-220G
i50HzT
CJ533-1
SG10TC15M
D 92 M - 02 DIODE
c 92 M - 02 DIODE
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PDF
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marking KZ diode
Abstract: SG20TC10M
Text: Schottky Barrier Diode Twin Diode • fl- tlH S G 20T C 1OM OUTLINE Unit: mm Package ! FTO-220G Weight L54g Typ 100V 20A 4.5 Feature • Tj=1751C • Tj=175°C • Full Molded • Low Ir=30|jA • 1£ l R = 3 0 p A • Resistance for thermal run-away Main Use
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OCR Scan
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SG20TC1OM
FTO-220G
i50HzT
CJ533-1)
marking KZ diode
SG20TC10M
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFS140A Advanced Power MOSFET FEATURES b vdss • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1751C Operating Temperature Lower Leakage Current : 10 MA Max. @ VOS=100V
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OCR Scan
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IRFS140A
1751C
IEFS14
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PDF
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L014A
Abstract: No abstract text available
Text: IRFS530A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1751C Operating Temperature Lower Leakage Current : 10 jJA M a x @ Vos = 100V Lower R dsjon, : 0.092 £2 (Typ.)
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OCR Scan
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1751C
IRFS530A
L014A
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PDF
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Untitled
Abstract: No abstract text available
Text: • CURRENT REGULATOR DIODES DCR250 thru • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE •HIGH SOURCE IMPEDANCE DCR257 • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Tem perature: -65 C to + 1751C S orage Tem perature: -65:>C to +175' C
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OCR Scan
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DCR250
DCR257
1751C
JCR251
DCR252
CR253
DCR254
CR255
CR256
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PDF
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Untitled
Abstract: No abstract text available
Text: N a t i o n a l S e mi c on d u c t j r D 9 ro CLC425 Ul t ra L o w N o i s e W i d e b a n d Op A m p (A CD General Description Features The C LC 425 com bines a w ide bandw idth (1.9G H z G B W ) w ith very low input noise (1.05n V/VH z, 1 .6p A/VH z) and low d c e rro rs (1 OOjiV
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OCR Scan
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CLC425
CLC425
100dB
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PDF
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S3015A
Abstract: S3015B opto 1128
Text: 9097250 TOSHIBA D I S C R E T E / O P T O ^ 'V ^ U Z 39C 00539 jA U 'S H 't T - K O T - 7 - ( U n it • mm O o 3 - ¿ < ÿ x i l '- # , ^ jg HF ^ - ( H ig h - O rd e r F re q u e n c y M u l t i p l i e r A p p l i c a t i o n s Comb G e n e r a t o r , P u l s e S h a p in g , RF S w it c h in g A p p l i c a t i o n s
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OCR Scan
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S3015A
S3015A
S3015B
S301SA,
S3015B
opto 1128
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PDF
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MAX755
Abstract: 251C MAX735
Text: — 354 — MAX735/MAX755 M A X IM a a t i — KO'^uxW ISiJiHW ïe; P W M co -i v ' S — ^ y 7 i • x -f ■W j I / - « , + 4 .5 V iU _ h f f ;> A * O ii ÿ , M A X 7 3 5 ( ± - 5 V / '2 0 0 m A , M A X 7 5 5 H 1 W c o m * Î f f f t * è T - ÿ ï > . M A X 7 5 5 tt œ * '» Œ " T 5 E 'S T * , i f - H l t
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OCR Scan
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MAX735/MAX755
MAX735fÂ
200mA,
MAX755H
MAX755(
MAX735)
MAX755)
VCMAX735)
471mW
MAX755
251C
MAX735
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PDF
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CH250S0080
Abstract: No abstract text available
Text: Schottky Rectifier FET Protection Die CH250S0080 9 R O + 0-000 .¿oux aoool -12 MILS MIN. 13 MILS MAX. _ Q J ALUMINUM PAD SILVER PAD • S c h o ttk y B arrier R ectifier • Guard Ring P ro te cte d • Low Forward Voltage • O ptim ized fo r 42V Bus Operation
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OCR Scan
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CH250S0080
CH250S0080
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PDF
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74F10d
Abstract: No abstract text available
Text: 0 7E D I ¡ , 24^057 QQIMG^B MITSUBISHI ADVANCED SCHOTTKY TTL |0 < ^ M74F10P/FP/DP ,*oO MIT SUB IS HI Í DGTL LOGIC} 07E II •_ TRIPLE 3-IN PU T POSITIVE NAND GATE | T-93-/S DESCRIPTION PIN CONFIGURATION TOP VIEW The M 74F10P is a semiconductor integrated circuit con
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OCR Scan
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M74F10P/FP/DP
74F10P
T-93-/S
74F10d
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PDF
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