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16N170A Price and Stock

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IXYS Corporation IXGT16N170A IGBT NPT 1700V 16A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGT16N170A	Tube	556		1	1 $16.47 10 $16.47 100 $10.782 1000 $16.47 10000 $16.47	Buy Now
Mouser Electronics	IXGT16N170A		3,119			1 $16.43 10 $15.4 100 $10.78 1000 $10.35 10000 $10.35	Buy Now
TTI	IXGT16N170A	Tube	300		30	1 - 10 - 100 $14.34 1000 $14.34 10000 $14.34	Buy Now
TME	IXGT16N170A				1	1 $14.29 10 $11.35 100 $10.17 1000 $10.17 10000 $10.17	Get Quote
IXYS Corporation IXGH16N170A IGBT 1700V 16A 190W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH16N170A	Tube	254		1	1 $11.04 10 $11.04 100 $7.01633 1000 $11.04 10000 $11.04	Buy Now
Mouser Electronics	IXGH16N170A		422			1 $11.04 10 $10.75 100 $6.92 1000 $6.26 10000 $6.26	Buy Now
TTI	IXGH16N170A	Tube			300	1 - 10 - 100 - 1000 $8.52 10000 $8.52	Buy Now
TME	IXGH16N170A				1	1 $11.14 10 $8.8 100 $7.9 1000 $7.9 10000 $7.9	Get Quote
New Advantage Corporation	IXGH16N170A		292		1	1 - 10 - 100 $17.61 1000 $16.43 10000 $16.43	Buy Now
IXYS Corporation IXBH16N170A IGBT 1700V 16A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBH16N170A	Tube	138		1	1 $13.5 10 $13.5 100 $8.70433 1000 $13.5 10000 $13.5	Buy Now
Mouser Electronics	IXBH16N170A		815			1 $13.5 10 $12.78 100 $8.71 1000 $8.06 10000 $8.06	Buy Now
TTI	IXBH16N170A	Tube	600		10	1 - 10 $12.6 100 $12.6 1000 $12.6 10000 $12.6	Buy Now
TME	IXBH16N170A				1	1 $15.45 10 $12.29 100 $11.45 1000 $11.45 10000 $11.45	Get Quote
New Advantage Corporation	IXBH16N170A		200		1	1 - 10 - 100 $22.65 1000 $21.14 10000 $21.14	Buy Now
IXYS Corporation IXBA16N170AHV REVERSE CONDUCTING IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBA16N170AHV	Tube	8		1	1 $25.77 10 $25.77 100 $17.9802 1000 $17.9802 10000 $17.9802	Buy Now
Mouser Electronics	IXBA16N170AHV					1 - 10 - 100 - 1000 $19.16 10000 $19.16	Get Quote
TTI	IXBA16N170AHV	Tube			300	1 - 10 - 100 - 1000 $17.98 10000 $17.98	Buy Now
TME	IXBA16N170AHV		8		1	1 $30.68 10 $24.38 100 $22.07 1000 $22.07 10000 $22.07	Buy Now
IXYS Corporation IXBT16N170A IGBT 1700V 16A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBT16N170A	Tube			300	1 - 10 - 100 - 1000 $11.84173 10000 $11.84173	Buy Now
Mouser Electronics	IXBT16N170A		297			1 $18.3 10 $17.3 100 $14.16 1000 $11.84 10000 $11.84	Buy Now
TTI	IXBT16N170A	Tube			300	1 - 10 - 100 - 1000 $12.08 10000 $12.08	Buy Now
TME	IXBT16N170A		9		1	1 $16.39 10 $12.92 100 $12.08 1000 $12.08 10000 $12.08	Buy Now
New Advantage Corporation	IXBT16N170A		50		1	1 - 10 - 100 $25.72 1000 $25.72 10000 $25.72	Buy Now

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16N170A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	16N170A 728B1
smd diode 819 Abstract: 16N170A mos 1200v to-247 Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20	Original	PDF	16N170A 728B1 123B1 728B1 065B1 smd diode 819 16N170A mos 1200v to-247
16N170A Abstract: TO-247 weight IXGH16N170A Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	16N170A 728B1 TO-247 weight IXGH16N170A
16N170AH1 Abstract: 16N170A robot control 16N170 Text: Advance Technical Data High Voltage IGBT IXGH/IXGT 16N170A VCES IXGH/IXGT 16N170AH1 IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 40 ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700	Original	PDF	16N170A 16N170AH1 O-247 405B2 16N170A robot control 16N170
16N170AH1 Abstract: 16N170A IXGT16N170A IXGH16N170AH1 Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170A 16N170AH1 16N170AH1 16N170A IXGT16N170A IXGH16N170AH1
16N170A Abstract: diode 22 161 smd Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	16N170A 16N170A diode 22 161 smd
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V VGES Continuous	Original	PDF	16N170A 16N170A O-268 O-247
A1540 Abstract: rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1 Text: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	16N170AH1 ISOPLUS247 E153432 minute00 405B2 A1540 rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1
Untitled Abstract: No abstract text available Text: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	16N170AH1 ISOPLUS247 E153432 405B2
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170A 16N170AH1 W1700
16N170 Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170A 16N170A O-268 O-247 16N170
Untitled Abstract: No abstract text available Text: High Voltage IGBT w/ Sonic Diode 16N170A 16N170A 16N170AH1 16N170AH1 VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 70ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	PDF	IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 338B2
IXGH16N170A Abstract: IXGT16N170A Text: 16N170A 16N170A 16N170AH1 16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 35ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	PDF	IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 16N170A DH10A-1800PA IXGH16N170A IXGT16N170A
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	PDF	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

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16N170A Price and Stock

IXYS Corporation IXGT16N170A

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IXYS Corporation IXBH16N170A

IXYS Corporation IXBA16N170AHV

IXYS Corporation IXBT16N170A

16N170A Datasheets Context Search

Untitled

smd diode 819

16N170A

16N170AH1

16N170AH1

16N170A

Untitled

A1540

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Untitled

16N170

Untitled

IXGH16N170A

7N60B equivalent

50N60