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    Kyocera AVX Components DFFHV16MX1827

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    Kyocera AVX Components DFTHV16MX1827

    Power Film Capacitor, 1820 uF, 3 kV, ? 10%, PP, Chassis Mount - Bulk (Alt: DFTHV16MX1827)
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    16MX18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms

    MS18R1622AH0-CK8

    Abstract: MS18R1624AH0-CK8 MS18R1628AH0-CK8
    Text: MS18R1622 4/8 AH0-CK8 Preliminary Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Rev.1.0 Dec. 2001 Page 0 MS18R1622(4/8)AH0-CK8 Preliminary ( 16Mx18)*2(4/8)pcs Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V


    Original     		PDF MS18R1622 256/288Mbit 16Mx18) 288Mb 16K/32ns MS18R1622AH0-CK8 MS18R1624AH0-CK8 MS18R1628AH0-CK8

    b41 Marking

    Abstract: No abstract text available
    Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WEG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms b41 Marking

    a80 marking code

    Abstract: marking A32 marking code B38 samsung electronics logo MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms a80 marking code marking A32 marking code B38 samsung electronics logo MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9

    A76 MARKING CODE

    Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
    Text: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WEG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms A76 MARKING CODE a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86

    a80 marking code

    Abstract: a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8
    Text: Preliminary MS18R1622 4/8 EH0 Revision History Version 0.1 (February 2004) - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Feb. 2004 Preliminary MS18R1622(4/8)EH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb E-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms a80 marking code a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8

    a80 marking code

    Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a80 marking code MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84

    a74 marking code

    Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a74 marking code MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode

    marking b61

    Abstract: transistor marking A21 marking code b35 MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9 MS18R1624DH0-CT9
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V Overview


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms marking b61 transistor marking A21 marking code b35 MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9 MS18R1624DH0-CT9

    marking B44

    Abstract: DH0 165
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 256/288Mbit 16Mx18) 288Mb 16K/32ms marking B44 DH0 165

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    200-ball

    Abstract: A79 marking code MN18R1628EF0 samsung resitor
    Text: MN18R1624 8 EF0 MP18R1624(8)EF0 Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Version 1.0 May 2004


    Original     		PDF MN18R1624 MP18R1624 288Mbit 16Mx18) 288Mb 16K/32ms 200-ball A79 marking code MN18R1628EF0 samsung resitor

    a65 1021

    Abstract: No abstract text available
    Text: MR16R1622 4/8/G AF0(1) MR18R1622(4/8/G)AF0(1) Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002)


    Original     		PDF MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb a65 1021

    direct rdram rac

    Abstract: No abstract text available
    Text: MD16R1624 8/G AF0 MD18R1624(8/G)AF0 Change History Version 1.0 (April 2002) * First copy. * Based on 1.0 version Rambus 256/288Mbit 32 Bit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(April 2002) 256/288Mbit A-die 32 Bit RIMM Module Datasheet


    Original     		PDF MD16R1624 MD18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) direct rdram rac

    IS49NLC18160

    Abstract: No abstract text available
    Text: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz


    Original     		PDF IS49NLC93200 IS49NLC18160 IS49NLC36800 288Mb 533MHz 533MHz) 144-ball)

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 EH0 RAMBUS MODULE SERIAL PRESENCE DETECT SO-RIMMTM Module SPD Specification based on 288Mb RDRAM(E-die, 32s banks) Version 1.0 May 2004 Change History Version 0.1 (Jan. ′04) -Preliminary First Copy Based on the SAMSUNG 288Mb D-die SO-RIMM Module SPD


    Original     		PDF MS18R1622 288Mb MS18R1628EH0-CT9/CM8/CK8 16Mx18 K4R881869E-HCT9/HCM8/HCK8

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    SAMSUNG MR18R162GMN0

    Abstract: A76 MARKING CODE MR18R162GMN0-CK8
    Text: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet


    Original     		PDF MR16R1624 MR18R1624 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 A76 MARKING CODE MR18R162GMN0-CK8

    SAMSUNG MR18R162GMN0

    Abstract: MR18R162GMN0-CK8
    Text: MR16R162C G MN0 MR18R162C(G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet


    Original     		PDF MR16R162C MR18R162C 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 MR18R162GMN0-CK8

    357mhz

    Abstract: No abstract text available
    Text: MR18R1624 6/8/C/G MN0 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 288M RDRAM(M-die, 32s banks) Version 1.1a November 2000 Change History Version 1.1 (Oct. ′00) Based on the Direct RambusTM SPD Specification 1.1. Version 1.1a (Nov. ′00)


    Original     		PDF MR18R1624 MR18R162C 16Mx18 K4R881869M-NCK8/NCK7/NCG6) 357mhz

    M1017

    Abstract: IS49NLS18160
    Text: IS49NLS93200,IS49NLS18160 288Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at


    Original     		PDF IS49NLS93200 IS49NLS18160 288Mb 533MHz 533MHz) IS49NLS1816025BLI IS49NLS9320033BI IS49NLS9320033BLI IS49NLS1816033BI IS49NLS1816033BLI M1017 IS49NLS18160

    marking code b84

    Abstract: No abstract text available
    Text: MN18R1624 8 EF0 MP18R1624(8)EF0 Preliminary Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Page 0 Version 0.1 Feb. 2004 MN18R1624(8)EF0 MP18R1624(8)EF0 Preliminary


    Original     		PDF MN18R1624 MP18R1624 288Mbit marking code b84

    b58 468

    Abstract: B58 608
    Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004


    Original     		PDF MR16R1624 MR18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb b58 468 B58 608

    B83 004

    Abstract: marking a86 b72 voltage regulator
    Text: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.


    Original     		PDF MN18R162 MP18R162 288Mbit 144MB 16Mx18) 288Mb 16K/32ms B83 004 marking a86 b72 voltage regulator