16MB HIGH-SPEED ASYNCHRONOUS SRAM Search Results

CXK77L18R160GB-3

Abstract: CXK77L18R160GB-33 CXK77L18R160GB-4
Contextual Info: SONY CXK77L18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 1M x 18 3/33/4 Preliminary Description The CXK77L18R160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

43bh

Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
Contextual Info: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words

CXK77P36R160GB

Contextual Info: SONY CXK77P36R160GB / CXK77P18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77P36R160GB (organized as 524,288 words by 36 bits) and the CXK77P18R160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

CXK77Q18R160GB

Abstract: CXK77Q18R160GB-3 CXK77Q18R160GB-33 CXK77Q18R160GB-4 CXK77Q36R160GB CXK77Q36R160GB-3 CXK77Q36R160GB-33 CXK77Q36R160GB-4
Contextual Info: SONY CXK77Q36R160GB / CXK77Q18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77Q36R160GB (organized as 524,288 words by 36 bits) and the CXK77Q18R160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

CXK77N18R160GB

Abstract: CXK77N18R160GB-3 CXK77N18R160GB-33 CXK77N18R160GB-4 CXK77N36R160GB CXK77N36R160GB-3 CXK77N36R160GB-33 CXK77N36R160GB-4
Contextual Info: SONY CXK77N36R160GB / CXK77N18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 3/33/4 Preliminary Description The CXK77N36R160GB (organized as 524,288 words by 36 bits) and the CXK77N18R160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

Contextual Info: SONY CXK77Q36B160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 512K x 36 Organization 28/33/37/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

Contextual Info: SONY CXK77Q36B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 28/33/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

CXK77Q36B160GB

Abstract: CXK77Q36B160GB-28 CXK77Q36B160GB-33 CXK77Q36B160GB-4
Contextual Info: SONY CXK77Q36B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 Organization 28/33/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

CXK77N18B160GB-3

Abstract: CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 BGA-119
Contextual Info: SONY  CXK77N36B160GB / CXK77N18B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77N36B160GB (organized as 524,288 words by 36 bits) and the CXK77N18B160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

SAS controller chip

Abstract: CXK77N18B160GB-3 CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 SAS controller
Contextual Info: SONY CXK77N36B160GB / CXK77N18B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77N36B160GB (organized as 524,288 words by 36 bits) and the CXK77N18B160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

6T SRAM

Abstract: SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram
Contextual Info: TN-45-17: CellularRAM Replacing Single- and Dual-CE# SRAM Introduction Technical Note Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM Introduction Micron CellularRAM™ devices are designed to be backward-compatible with 6T SRAM

IBM0418166XLAC

Abstract: IBM0436166XLAC
Contextual Info: . Preliminary IBM0436166XLAC IBM0418166XLAC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M × 18 organization • Common I/O • CMOS technology • Asynchronous output enable and sleep mode inputs • Synchronous pipeline mode of operation with

tsop-56 samsung

Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
Contextual Info: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:

Contextual Info: SONY CXK77Q36162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 512K x 36 Description The CXK77Q36162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer

CXK77L18162AGB-25

Abstract: CXK77L18162AGB-27 CXK77L18162AGB-3 ddr1 ram
Contextual Info: SONY CXK77L18162AGB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162AGB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer

BGA-153P-021

Abstract: sony bus control BGA153-P-1422
Contextual Info: SONY CXK77Q18162AGB Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77Q18162AGB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1 • Fast clock and OE# access times

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES

CXK77L18162GB

Abstract: CXK77L18162GB-25 CXK77L18162GB-27 CXK77L18162GB-3
Contextual Info: SONY CXK77L18162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer

GW 9n

Abstract: MT58L512Y36D MT58V1MV18D MT58V512V32D MT58V512V36D 100-PIN MS-026 MT58L1MY18D MT58L512Y32D
Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1 • Fast clock and OE# access times

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES