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    7036S12PF8 Renesas Electronics Corporation 16K X 18K Visit Renesas Electronics Corporation
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    7036L20PF Renesas Electronics Corporation 16K X 18K Visit Renesas Electronics Corporation
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    Murata Manufacturing Co Ltd GRM21BR71C105KA01K

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1 uF 16 VDC 10% 0805 X7R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GRM21BR71C105KA01K 30,117
    • 1 $0.16
    • 10 $0.091
    • 100 $0.059
    • 1000 $0.042
    • 10000 $0.028
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    Melexis Microelectronic Integrated Systems MLX90316KDC-BDG-100-RE

    Board Mount Motion & Position Sensors Triaxis Programmable Rotary Position Sensor feat. Ana-PWM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MLX90316KDC-BDG-100-RE 27,016
    • 1 $4.83
    • 10 $4.11
    • 100 $3.85
    • 1000 $3.48
    • 10000 $3.31
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    Murata Manufacturing Co Ltd GRM31MR71C105KA01K

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1 uF 16 VDC 10% 1206 X7R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GRM31MR71C105KA01K 10,106
    • 1 $0.31
    • 10 $0.203
    • 100 $0.115
    • 1000 $0.076
    • 10000 $0.061
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    Melexis Microelectronic Integrated Systems MLX90316KDC-BCG-200-RE

    Board Mount Motion & Position Sensors Triaxis Programmable Rotary Position Sensor feat. Ana-PWM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MLX90316KDC-BCG-200-RE 5,446
    • 1 $7.7
    • 10 $4.48
    • 100 $3.73
    • 1000 $3.22
    • 10000 $3.21
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    Melexis Microelectronic Integrated Systems MLX90316KDC-BDG-100-TU

    Board Mount Motion & Position Sensors Triaxis Programmable Rotary Position Sensor feat. Ana-PWM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MLX90316KDC-BDG-100-TU 4,549
    • 1 $6.74
    • 10 $5.14
    • 100 $3.21
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    16K X 4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3VR10

    Abstract: AL5DS9289V AL5DS9389V marking a0l
    Text: AL5DS9xx9V AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V 4K/8K/16K/32K x 18 bits AL5DS9269/79V 16K/32K x 16 bits AL5DS9149/59/69/79/89V 4K/8K/16K/32K/64K x 9 bits AL5DS9069/79/89V 16K/32K/64K x 8 bits Preliminary 2002-Copyright by AverLogic Technologies, Corp.


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    AL5DS9349V/59V/69V/79V 4K/8K/16K/32K AL5DS9269/79V 16K/32K AL5DS9149/59/69/79/89V 4K/8K/16K/32K/64K AL5DS9069/79/89V 16K/32K/64K 2002-Copyright 3VR10 AL5DS9289V AL5DS9389V marking a0l PDF

    CY7C162

    Abstract: L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
    Text: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum


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    L7C162 MIL-STD-883, CY7C162 28-pin L7C162 28-pin CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20 PDF

    L7C164CC20

    Abstract: L7C164WC12 L7C164WC15 L7C164WC20
    Text: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation


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    L7C164/166 MIL-STD-883, CY7C164/166 24-pin 22/24-pin 22/28-pin L7C164 L7C166 L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20 PDF

    A12L

    Abstract: A13L CY7C006 CY7C016 TSOP 48 memory arbitration scheme C0066
    Text: with Sem, In t, Busy CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True dual-ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)


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    CY7C006 CY7C016 CY7C006) CY7C016) 65-micron 68-pin 7C006 A12L A13L CY7C006 CY7C016 TSOP 48 memory arbitration scheme C0066 PDF

    A12L

    Abstract: A13L CY7C006 CY7C016 C0066
    Text: with Sem, In t, Busy CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)


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    CY7C006 CY7C016 CY7C006) CY7C016) 65-micron 68-pin 64-pinor A12L A13L CY7C006 CY7C016 C0066 PDF

    CY7C006

    Abstract: CY7C016
    Text: fax id: 5207 1 CY7 C0 16 CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)


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    CY7C006 CY7C016 CY7C006) CY7C016) 65-micron 68-pin CY7C006 CY7C016 PDF

    c 335 16k

    Abstract: lmis 99248
    Text: Cypress Semiconductor Qualification Report QTP# 99325 VERSION 1.0 January, 2000 5V Synchronous FIFOs – R42HDHA Technology, Fab 4 CY7C43683 16K x 36 Undirectional Synchronous FIFO w/ Bus Matching – 128 Pins TQFP CY7C43684 16K x 36 x 2 Bidirectional Synchronous FIFO w/


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    R42HDHA CY7C43683 CY7C43684 CY7C43686 7C43684, CY7C1049-VC CY7C1049-VCB 30C/60 c 335 16k lmis 99248 PDF

    SEM 2005 16 PINS

    Abstract: sem 2005 CYPRESS CROSS REFERENCE dual port sram sem 2005 16 pin CY7C006A CY7C007A CY7C016A CY7C017A TPD16-3
    Text: CY7C006A CY7C007A CY7C017A32K/16K x 8, 32K x 9 Dual-Port Static RAM CY7C006A/CY7C007A CY7C016A/CY7C017A 32K/16K x8, 32K/16K x9 Dual-Port Static RAM Features • Automatic power-down • True dual-ported memory cells which allow simultaneous access of the same memory location


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    CY7C006A CY7C007A CY7C017A32K/16K CY7C006A/CY7C007A CY7C016A/CY7C017A 32K/16K CY7C006A) CY7C007A) CY7C016A) SEM 2005 16 PINS sem 2005 CYPRESS CROSS REFERENCE dual port sram sem 2005 16 pin CY7C006A CY7C007A CY7C016A CY7C017A TPD16-3 PDF

    64 CERAMIC LEADLESS CHIP CARRIER LCC

    Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
    Text: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ROW SELECT 8 O ROW ADDRESS CONTROL The L7C164 and L7C166 provide asynchronous unclocked operation with matching access and cycle times.


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    L7C164/166 L7C164 L7C166 L7C164, L7C166KC20 L7C166KC15 L7C166KC12 L7C166KM25 L7C166KM20 64 CERAMIC LEADLESS CHIP CARRIER LCC L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20 PDF

    SEM 2006

    Abstract: A12L CYDC064B16 CYDC128B08 CYDC128B16 CYDC256B16
    Text: CYDC256B16, CYDC128B16, CYDC064B16, CYDC128B08, CYDC064B08 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM Features • Lead Pb -free 14 x 14 x 1.4 mm 100-pin TQFP Package • True dual-ported memory cells which allow simultaneous access of the same memory location


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    CYDC256B16, CYDC128B16, CYDC064B16, CYDC128B08, CYDC064B08 4k/8k/16k 8k/16k 100-pin 4/8/16k 8/16k SEM 2006 A12L CYDC064B16 CYDC128B08 CYDC128B16 CYDC256B16 PDF

    PM12C

    Abstract: No abstract text available
    Text: fax id: 20 10 CYM1821 16K x 32 Static RAM Module Features • High-density 512-Kbit SRAM module • 32-bit standard footprint supports densities from 16K x 32 through 1M x 32 • High-speed CMOS SRAMs constructed from eight 16K x 4 SRAM SOJ packages mount­


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    CYM1821 512-Kbit 32-bit PM12C PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C460 CY7C462 CY7C464 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32Kx9FIFO Features Functional Description • 8K x 9 , 16K x 9 , 32K x 9 FIFO buffer memory T h e CY7C460, CY7C462, and CY7C464 are respectively, 8K, 16K, and 32K w ords


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    CY7C460 CY7C462 CY7C464 32Kx9FIFO CY7C460, CY7C462, PDF

    Untitled

    Abstract: No abstract text available
    Text: CYM1821 — 16K x 32 Static RAM Module CYPRESS ^ SEMICONDUCTOR Features Functional Description • High-density 512-Kbit SRAM module The CYM1821 is a high-performance 512-Kbit static RAM module organized as 16K words by 32 bits. This module is con­ structed from eight 16K x 4 SRAM SOJ


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    CYM1821 512-Kbit CYM1821 CYM1821PZâ 64-Pin CYM1821LPZâ CYM1821PMâ PDF

    CYM1821PZ-15C

    Abstract: No abstract text available
    Text: CYM1821 5f CYPRESS 16K x 32 Static RAM Module Features Functional Description • High-dcnsity 512-Kbit SRAM module The CYM1821 is a high-performance 512-Kbit static RAM module organteed as 16K words by 32 bits. This module is con­ structed from eight 16K x 4 SRAM SOJ


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    512-Kbit 32-bit CYM1821 M1821PM-- CYM1821PZ-15C CYM1821FM-- 1821PZ-20C CYM1821PM-- 1821PZ-25C PDF

    s288

    Abstract: ENABLE25
    Text: -L . □PM / V X Dense-Pac Microsystems, Inc. DPS288 16K X 18 CMOS SRAM MODULE O NOT RECOMENDED FOR NEW DESIGNS D ESC R IP TIO N : The DPS288 is a 16K X 18 Static Random Access Memory SRAM fabricated using 18 C M O S 16K X 1 SRAMs. The memory utilizes asynchronous circuitry


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    DPS288 DPS288 30A002-05 s288 ENABLE25 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYM1611 — ^ 16K x 16 Static RAM Module CYPRESS SEMICONDUCTOR Features Functional Description • High-density 256-kbit SRAM module T he CYM1611 is a very high performance 256-kbit static R A M module organized as 16K words by 16 bits. T he module is constructed from four 16K x 4 SRAMs in


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    CYM1611 256-kbit CYM1611 CYM16UHV-20M CYM1611HV-25C CYM1611LHV-25C 16UHV-25M CYM1611LHV-25M CYM1611HV-30C PDF

    Untitled

    Abstract: No abstract text available
    Text: □PMDense-Pac Microsystems, DPS288 _ 16K X 18 C M O S SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTIO N: The D PS288 is a 16K X 18 Static Random Access M em ory SRAM fabricated using 18 C M O S 16K X 1 SRAM s. The memory utilizes asynchronous circuitry


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    DPS288 PS288 16KX18 PDF

    Untitled

    Abstract: No abstract text available
    Text: DPS7M464/DPS8M464 Dense-Pac Microsystems, Inc. ^ 16K X 4 C M O S SR A M M O D U L E NOT RECOMENDED FOR NEW DESIGNS D ESC R IP TIO N : The D P S7M 464/D P S8M 464 are 16K X 4 SRAM module built with four 16K X 1 C M O S SRAMs. The memory utilizes asyncronous circuitry and may be


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    DPS7M464/DPS8M464 464/D Inputs/0A002-08 A0-A13 DPS8M464 30A002-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ n n i i y U I^ IV DPS129 Dense-Pac Microsystems, Inc. 0 16K X 8 CM OS SRAM M ODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS129 is a 16K X 8 Static Random Access Memory SRAM module using 8 CM OS 16K X 1 SRAMs. The memory utilizes asynchronous circuitry


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    DPS129 DPS129 125-C 16KX8 PDF

    ZD D59

    Abstract: IDT7MB6039
    Text: Integrated Device Technology* Inc. 2 x 16K x 60 DATA/INSTRUCTION CACHE MODULE FOR IDT79R3000 CPU IDT7MB6039 The IDT7MB6039 is a 240K-byte high-speed CMOS static RAM cache module constructed on a multilayer epoxy sub­ strate FR-4 , using30 (16K X 4) SRAM sand8 IDT74FCT373


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    IDT79R3000 IDT7MB6039 240K-Byte 12MHz, 20MHz, 25MHz 33MHz IDT79R3000 128-pin ZD D59 IDT7MB6039 PDF

    Untitled

    Abstract: No abstract text available
    Text: □PM DPS288 Dense-Pac Microsystems, Inc. 16K X 18 C M O S SRAM M O D U LE O NOT RECOMENDED FOR NEW DESIGNS DESCRIPTIO N: The D PS288 is a 16K X 18 Static Random Access M em ory SRAM fabricated using 18 C M O S 16K X 1 SRAM s. The memory utilizes asynchronous circuitry


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    DPS288 PS288 16KX18 30A002-05 PDF

    pioneer ic

    Abstract: No abstract text available
    Text: fiÀ PIONEER ~ PI2C2158 PI2C2157 — 16K x 16 SPARC CACHE SRAM PI2C2158 — 16K x 16 SPARC™ CACHE SRAM S E M I C O N D U C T O R C O R P O R A TION II111 II1IIII11111 IIII11II111II111 II111111111 II11111111111 Product Features: • 16K x 16 Synchronous Static


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    I1111 I111I I111111111 I11111111111 PI2C2157) CY7C157 PI2C2158) PI2C2158 CY7C157 pioneer ic PDF

    Untitled

    Abstract: No abstract text available
    Text: DPS129 □PM Dense-Pac Microsystems, Inc. ^ 16K X 8 C M O S SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS129 is a 16K X 8 Static Random Access Mem ory SRAM module using 8 CMOS 16K X 1 SRAMs. The memory utilizes asynchronous circuitry and may be maintained in any state for an indefinite


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    DPS129 DPS129 PDF

    di/CY7C470-25DMB

    Abstract: No abstract text available
    Text: CY7C470 CY7C472 CY7C474 PRELIMINARY CYPRESS SEMICONDUCTOR 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Functional Description 8K x 9 , 16K x 9, and 32K x 9 FIFO buffer memory Asynchronous read/write High-speed 33.3-MHz read/write independent of depth/width


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    CY7C470 CY7C472 CY7C474 CYC47X programCY7C474 di/CY7C470-25DMB PDF