16ELECTRONIC Search Results

Contextual Info: KM736V887 KM718V987 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document T itle 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision H is to ry Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Change DC Characteristics.

A9281

Abstract: 1993 SDRAM ra2t 1993 SDRAM samsung KM48SV2000
Contextual Info: PRELIMINARY CMOS SDRAM KM48SV2000 2M X 8 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEATURES The KM48SV2000 is a 16,777,216 bit synch­ ronous high data rate Dynamic RAM organized as 2,097,152 words by 8bits, fabricated with SAMSUNG'S high performance CMOS technology.

Contextual Info: KM736V849 KM718V949 PRELIMINARY 256Kx36 & 512KX18 Pipelined NfRAM Document Title 256Kx36 & 512Kx18-Bit Pipelined NfRAM™ Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark June. 09. 1998 Preliminary 0.1 1. Changed DC parameters

Contextual Info: KM736S849 KM718S949 PRELIMINARY 256Kx36 & 512Kx18 Pipelined NfRAM Document Title 256KX36 & 512Kx18-Bit Pipelined NfRAM™ Revision History Rev. No. Historv Draft Date Remark 0.0 1. Initial document. September. 1997 Prelim inary 0.1 1. Changed speed bin from 167MHz to 150MHz