16E5 Search Results

4LC1M16E5

Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5
Contextual Info: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh

Contextual Info: 1 MEG x 16 EDO DRAM DRAM M T4LC 1M 16E5 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • JE D E C - a n d in d u stry -sta n d a rd x l 6 tim in g , fu n ctio n s,

Contextual Info: 16E50 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 16 Load Current Max. (A)500m P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

Contextual Info: Advance information •■ AS4SC1M 16E5 A 1,8V 1M x 16 C M O S Intelliwatt1'' DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 refresh cycles, 16 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh

TT-612

Contextual Info: 1 MEG x 16 EDO DRAM MICRON I TECtWoLOBV. INC. DRAM M T4LC 1M 16E5 For the latest data sheet revisions, p/ease refer to the Micron Web site: www.micron.com/m ti/msp/htmi/da tasheet. h tmi FEATURES • JED EC- and industry-standard xl6 timing functions*, pinouts and packages

Contextual Info: 16E50-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 16 Load Current Max. (A)500m P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

varistor 270k

Abstract: ap 474
Contextual Info: Cjñarcon^ CHIP TYPE FOR SURFACE MOUNT DEVICE C h ip T y p e A lu m in u m E le ctro ly tic C a p a c ito r s • Standard ratings A C D -S E R IE S \ • Specifications Vdc (c o d e ) O p e ratin g tem perature ra n g e : —5 5 — H 05°C R ated voltage ra n g e : 4 ~ 1 6 V d c

Contextual Info: 16E5 A 5V 1Mx 16 CMOS DRAM EDO Features • Organization: 1,04 8 ,5 7 6 w ords x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 4 5 / 5 0 / 6 0 ns RAS access tim e - 2 0 / 2 0 / 2 5 ns hyper page cycle tim e

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

RAS 0510 SUN HOLD

Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
Contextual Info: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.

Contextual Info: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE MT2LDT132H X (S) MT4LDT232H (X) (S) MT8LDT432H(X)(S) FEATURES • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual in-line memory module (DIMM) • 4MB (1 Meg x 32), 8MB (2 Meg x 32),

Contextual Info: 1 MEG x 16 EDO DRAM |U|IC=RON 16E5 16E5 DRAM VrìfAlVl FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%

Contextual Info: A S p AUSTIN SEMICONDUCTOR, INC. ^ m e g H s DRAM PRELIMINARY 1 D R A M M E G x 1 6 D R A M 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • M IL-STD 883 44/50-Pin SOJ/LCC/Gull Wing 450mil • SM D Planned

DM-58

Abstract: INTERNAL DIAGRAM OF IC 7476 DM58
Contextual Info: PRELIMINARY MICRON M T4LD T 164(X ) 1 MEG x 64 DRAM M O D ULE 1 DRAM MODULE 1 MEG x 64 8 M EG ABYTE, 3.3V, FAST PAGE OR EDO PAGE M ODE FEATURES • JEDEC- an d in d u stry-stan d ard pinout in a 168-pin, dual-in-line m em ory m od u le (DIM M ) • H igh-perform ance C M O S silicon-gate process

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

4lc1m16e5-6

Contextual Info: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al

lt 1685

Contextual Info: i \ n l m TECHNOLOGY t c i 6 8 5 52Mbps, Precision Delay, RS485 Fail-Safe Transceiver FEATU R ES D € S C R IP T IO n • Precision Propagation Delay Over Tem perature: R eceiver/D river: 18.5ns + 3 .5ns ■ High Data Rate: 52Mbps The LTC 1685 is a high speed, precision delay RS485

Contextual Info: OBSOLETE M IC R O N I 1>2’ 4 MEG x 32 DRAM SODIMMs MT2LDT132H X (S), MT4LDT232H(X)(S), MT8LDT432H(X)(S) SMALL-OUTLINE DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES

LN 9297

Contextual Info: D24A 16 MEG DRAM DIE I ^ I C R O N DRAM DIE 16 MEG DRAM MT4LC4M4B1D24A, MT4LC4M4E8D24A, MT4LC1M16C3D24A, 16E5D24A FEATURES DIE DATA BASE D24A DIE OUTLINE see page 4 • S in g le 3 .3 V (x4, x l 6 ) p o w e r su p p ly • In d u stry -s ta n d a rd x4, x l 6 tim in g an d fu n c tio n s

Contextual Info: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write

Contextual Info: Preliminary information •■ I l 16E5 16E5 A 5V/3V l M x l ó CMOS DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed ■Read-modify-write >TTL-compatible, three-state DQ >JEDEC standard package and pinout - 4 5 /5 0 /6 0 ns RA S access tim e

1N44H

Abstract: 1a5ah 1178H 1N60H 1171H 1A86H 0m02 1b7ah 19C1H 1N14H
Contextual Info: SONET/SDH Payload Extractor/Aligner SPECTRA-4x155 Production PM5316 SPECTRA 4x155 SONET/SDH Payload Extractor/Aligner 4 x 155 Mbit/s Datasheet Proprietary and Confidential Production Issue 4: March 2001 Proprietary and Confidential to PMC-Sierra, Inc. and for its customers’ internal use

M32195F4

Abstract: M32196F8 M32192F8 up board 10th 2012 cs 1694 eo M32R-FPU Extended Instruction 1646 IC DATA SHEET capacitor 106c SM 8002 FS16.00
Contextual Info: REJ09B0123-0110 32 32192/32195/32196 Group Hardware Manual RENESAS MCU M32R FAMILY / M32R/ECU SERIES All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

MAX 77686 g

Abstract: MAX 77686 CDF 6D5 7B396 D5564 D898B d5623 c4369 0/MAX 77686 g 49/MAX 77686 g
Contextual Info: 7C8F8F8DC8DD8 DFD8CD8F 12344567 8 44ABCD8BCAECFDC8FCCFEFCCF 1D F8 EFC!DC8 " 3#6D55677$%4634D54&3' 34D54&362D43 7F6 C7716 A3(B6 46 D6 5$236 34D54&3' 34D54&36 >3(?6 FD6 ED6 F526 444&6 F6 E