Si7601DN
Abstract: No abstract text available
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ) 16.2 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7601DN
Si7601DN-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7601DN
Si7601DN-T1-E3
Si7601DN-T1-GE3
11-Mar-11
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Si7601DN
Abstract: si7601
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7601DN
Si7601DN-T1-E3
Si7601DN-T1-GE3
18-Jul-08
si7601
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Si7812DN
Abstract: Si7812DN-T1-GE3 Si7812DN-T1-E3
Text: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7812DN
Si7812DN-T1-E3
Si7812DN-T1-GE3
11-Mar-11
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7812DN
Si7812DN-T1-E3
Si7812DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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PDF
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Si7812DN
Si7812DN-T1-E3
Si7812DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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PDF
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Si7812DN
Si7812DN-T1-E3
Si7812DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si7601DN
Abstract: No abstract text available
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Original
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PDF
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Si7601DN
Si7601DN-T1-E3
Si7601DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management
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PDF
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Si8406DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si7812DN
Abstract: 16e marking Si7812DN-T1-E3 si7812 marking 16e
Text: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm
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Si7812DN
Si7812DN-T1-E3
08-Apr-05
16e marking
si7812
marking 16e
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm
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Si7812DN
Si7812DN-T1--E3
S-51129--Rev.
13-Jun-05
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm
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Si7812DN
Si7812DN-T1--E3
08-Apr-05
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Si7601DN
Abstract: si7601
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Original
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PDF
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Si7601DN
Si7601DN-T1-E3
Si7601DN-T1-GE3
11-Mar-11
si7601
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Untitled
Abstract: No abstract text available
Text: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Original
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PDF
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Si7601DN
Si7601DN-T1-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si8406
Abstract: No abstract text available
Text: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management
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Original
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PDF
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Si8406DB
Si8406DB-T2-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si8406
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm
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Original
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PDF
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Si7812DN
Si7812DN-T1-E3
18-Jul-08
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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PDF
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Si7812DN
Si7812DN-T1-E3
Si7812DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si7812DN-T1-GE3
Abstract: Si7812 Si7812DN Si7812DN-T1-E3
Text: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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PDF
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Si7812DN
Si7812DN-T1-E3
Si7812DN-T1-GE3
18-Jul-08
Si7812
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SI7812DN
Abstract: No abstract text available
Text: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Original
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Si7812DN
Si7812DN-T1-E3
Si7812DN-T1-GE3
11-Mar-11
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by520
Abstract: No abstract text available
Text: BY520-14E, BY520-16E www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • 24 mils lead wire diameter
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BY520-14E,
BY520-16E
22-B106
AEC-Q101
DO-204AL
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
by520
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89129
Abstract: BY520 ignition module BY520-14 BY520-16
Text: BY520-14E, BY520-16E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • 24 mils lead wire diameter • Fast switching for high efficiency
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BY520-14E,
BY520-16E
MIL-S-19500
22-B106
AEC-Q101
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
11-Mar-11
89129
BY520
ignition module
BY520-14
BY520-16
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ignition module
Abstract: by520-16 BY520-14EHE3
Text: BY520-14E, BY520-16E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • 24 mils lead wire diameter • Fast switching for high efficiency
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Original
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BY520-14E,
BY520-16E
MIL-S-19500
22-B106
AEC-Q101
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
2011/65/EU
ignition module
by520-16
BY520-14EHE3
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smd transistor marking EY
Abstract: SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11
Text: m&s.lTio2/16E U November 1964 WPFR5S7XNG MIL-B-195C+6D 27 Eecember 1*1 MILITASY SPECITICAT20N TRANSISTOR, GVN, SILICON TTPES 2N3.42, 2NX% , A:lD 2N343 i, mandatory for “8. of the DePart.mnt of Defame. by all ‘211h SDOoifiCd.iorJ Awmim 1. tamlt~ md -E 1.1
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lTio2/16E
MIL-B-195C
SPECITICAT20N
2N343
NIL-S-195Cr2
qF02ifi+
2N342
411wII.
2N342
2N342A,
smd transistor marking EY
SMD TRANSISTOR MARKING 3211
ahr TRANSISTOR smd
transistor SMD S33
ahr11
SMD Transistor 1lm
SMD TRANSISTOR MARKING 2Nx
SMD TRANSISTOR MARKING 2D
transistor kc 2026
dw11
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Untitled
Abstract: No abstract text available
Text: 1 M E G x 16 EDO DRAM V IIC Z R O N n P A V n * M M T4C 1M 16E 5 \ m M T4L C 1M 16E 5 FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single pow er supply (+3.3V +0.3V or 5V ±10%
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OCR Scan
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PDF
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024-cycle
44/50-Pin
42-Pin
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