16C1B Search Results

2-16c1b

Abstract: S16C SC-65
Contextual Info: 2-16C1B Uniti rin 03. 2±0. 2 5, 45*0, 2 5, 45±0, 2 SO o Nane TD -3 P C N JEDEC - E I AJ Toshiba Discrete SC -6 5 2 -16 C 1B Circuit - ^ i- 1 • NiiQinNcnr Integrated Aug.2000

K4115 toshiba

Abstract: TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65
Contextual Info: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)

K2613

Abstract: toshiba k2613 2SK2613
Contextual Info: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

toshiba k2613

Abstract: K2613 K2613 TOSHIBA 2SK2613
Contextual Info: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

toshiba k2613

Abstract: 2SK2613 K2613
Contextual Info: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

Contextual Info: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Unit: mm (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

Contextual Info: 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3905 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) •

toshiba k2613

Abstract: K2613
Contextual Info: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

Contextual Info: 2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3904 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.2 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.) •

K3903

Abstract: 2SK3903 SC-65 2SK3903(F)
Contextual Info: 2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3903 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) •

k3878

Abstract: transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65
Contextual Info: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •

2SK2613

Abstract: k2613 toshiba k2613 K2613 TOSHIBA K261
Contextual Info: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

2SK3905

Abstract: SC-65 K3905
Contextual Info: 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3905 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) •

K2313

Abstract: 2SK2313 jeita sc-65 2SK2313F
Contextual Info: 2SK2313 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2313 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 8mΩ (標準) z オン抵抗が低い。

2SK3903

Abstract: SC-65
Contextual Info: 2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3903 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) •

k3904

Abstract: 2SK3904 SC-65
Contextual Info: 2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3904 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.2 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.) •

Contextual Info: TOSHIBA 16C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The 16C1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

K4115 toshiba

Abstract: TRANSISTOR K4115 k4115 toshiba k4115 K4115 toshiba transistor 2SK4115 TRANSISTOR 2SK4115 2SK4115* equivalent k411 SC-65
Contextual Info: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2

k3878

Abstract: transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor
Contextual Info: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •

K4115 toshiba

Abstract: TRANSISTOR K4115 k4115 2SK4115 TRANSISTOR 2SK4115 K4115 toshiba transistor k411 SC-65
Contextual Info: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)

3p transistor

Abstract: 2-16C1B
Contextual Info: Transistor Outline Package New Type TO–3P (N) Package Outline Dimensions Outline Dimensions Unit: mm 1.8 max 15.9 max 3.3 max 2.0 ±0.3 1.0 +0.3 –0.25 5.45 ±0.2 20.5 ±0.5 9.0 2.0 20.0 ±0.3 4.5 φ3.2 ±0.2 3 4.8 max 2 2.8 1 (Bottom view) 0.6 +0.3 –0.1

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 A1234567898AAABCDCEFCAFB A AAA AAAAAAAAAAA AA AAAAA A AAAAAAAA A A CA3E AAA AA1EEAFBAFB3CBAAECACA6 AFE CD!A"E#A CCCA988$

2SK3905

Abstract: SC-65 K3905
Contextual Info: 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3905 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) •

K2173

Abstract: 2SK2173 jeita sc-65 25A1317
Contextual Info: 2SK2173 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2173 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 13mΩ(標準) z オン抵抗が低い。