16BITS Search Results

Contextual Info: PcRam Description TS32MLE72V6K Dimensions The TS32MLE72V6K is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6K A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit

Contextual Info: PcRam Description TS32MLE72V6Y Dimensions The TS32MLE72V6Y is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6Y A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit

Contextual Info: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory

IS42RM16160E

Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
Contextual Info: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS43LR16640A

Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

HY5V66EF6P

Abstract: HY5V66EF6
Contextual Info: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.01 History Initial Draft Draft Date Remark Dec. 2004 Preliminary June. 2005 Preliminary 1. Editorial chage 0.80Typ -> 0.45 +/-0.05 page12, Ball Dimension

HY57V281620A

Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
Contextual Info: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16

TC58DAM72A1FT00

Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
Contextual Info: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable

IS42SM16800F-75BLI

Abstract: IS42SM16800F
Contextual Info: IS42SM16800F Preliminary Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are

HY57W2A1620HCT

Contextual Info: HY5W2A6C L/S F-F / HY57W2A1620HC(L/S)T-F HY5W26CF-F / HY57W281620HCT-F 4Banks x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 0.3 1. Datasheet separation (Normal & Low Power) 2. Page2 ~ Page23 : Part Number Change HY5W26CF -> HY5W2A6CF

Contextual Info: N128D1618LPAW Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1618LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: HY57V281620HC L/S T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16

HY57Y281620HC

Abstract: HY57Y281620HCLT-H
Contextual Info: HY57Y281620HC L T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57Y281620HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57Y281620HC(L)T is organized as 4banks of 2,097,152x16

AK4516A

Abstract: sound level meter VSOP 28 441K
Contextual Info: DIGITAL AUDIO PRODUCTS DIGITAL AUDIO and MULTIMEDIA SOUND CODECs AK4563A 28-pin VSOP 5.6 x 9.8 × 1.2 mm Low Power 16-Bit 4ch ADC & 2ch DAC with ALC ( 1 ) Resolution: 16bits ( 2 ) Recording Functions • 4ch Analog Input PGA (Programmable Gain Amplifier)

HY57V281620HCT-HI

Abstract: HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI
Contextual Info: HY57V281620HC L/S T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16

TC58DVM82A1FT00

Abstract: TC58DAM82A1FT00 TC58DAM82F1FT00 TC58DVM82F1FT00
Contextual Info: TC58DVM82A1FT00/ TC58DVM82F1FT00 TC58DAM82A1FT00/ TC58DAM82F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS/16M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM82x1xxxx is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable

46LR16640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

46LR16320C

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: Preliminary Rev. 0.0 ,„ c . „ LG Semicon Co.,Ltd. Description The GMM2735233CTG is a 4M x 72bits Synchronous Dynamic RAM MODULE w hich is assembled 5 pieces o f 4M x 16bits Synchronous DRAMs in 54 pin TSOP I! package and one 2048 bit EEPROM in 8pin TSSOP

Contextual Info: N128D1633LPAG2 Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1633LPAG2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: IS42RM16800F Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are

Contextual Info: IS42VM16800F Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42VM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are

Contextual Info: SH67L17 24K 4-bit Micro-controller with LCD Driver Features SH6610D-based single-chip 4-bit micro-controller with LCD driver ROM: 24K X 16bits RAM: 4136 X 4 bits - 43 System Control Register - 4093 Data memory - 180 LCD RAM Operation Voltage: 1.2V - 1.7V Typical 1.5V

HY5S5A6

Contextual Info: Preliminary HY5S5A6D L/S F(P)-xE 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.