16DEC1 Search Results
16DEC1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 BY - 2 3 1 - REVISIONS ALL RIGHTS RESERVED. P LTR DESCRIPTION C D DATE DWN APVD REV; EC 0B40-0077-01 30APR01 LH GB REV; ECO-13-019669 16DEC13 JB RA D D 13.46 [.53 ] 1 MATERIAL: MODULE: ABS MOLDING COMPOUND. |
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0B40-0077-01 ECO-13-019669 30APR01 16DEC13 1-11EMA 10NOV99 09DEC99 14SEP99 | |
Contextual Info: 4 TH IS DRAWING S 2 U N P U B L IS H E D . RELEASED FOR PUBLICATION - .- REVISIO NS ALL RIGHTS RESERVED. COPYRIGHT By - LTR D E S C R IP TIO N DATE ECR-1 1 - 0 2 5 4 6 4 NOTES: D DWN 16DEC1 APVD RK BVH E - * P IN /j\ PITCH TOLERANCE TO BE ± .18[.007] EOR 1 ,27[.050] PITCH JUMPERS |
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16DEC1 28FEB01 | |
Contextual Info: SES08C15L04 DESCRIPTION Brightking's SES08C15L04 has been designed to provide bi-directional protection for sensitive electronics from damage or latch-up due to ESD, lightning and other voltage-induced transient events. Each device will protect four data or I/O lines. They are available with operating voltages |
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SES08C15L04 SES08C15L04 IEC61000 IEC61000-4-2 SOIC-08 041REF 04REF 16-Dec-11 | |
Contextual Info: LES08A05L05 DESCRIPTION Brightking's LES08A05L05 component is surge rated diode array designed to protect high speed data line interfaces. It has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused |
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LES08A05L05 LES08A05L05 IEC61000-4-2 SOIC-08 041REF 04REF 16-Dec-11 | |
Contextual Info: VBUS053CZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 28 V FEATURES • Ultra compact LLP75-7L package 6 5 • Low package height < 0.6 mm 4 • 3-line USB ESD-protection with max. working range = 5.5 V • VBUS-protection with 28 V working range |
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VBUS053CZ-HAF LLP75-7L 2002/95/EC 2002/96/EC 11-Mar-11 | |
Contextual Info: SiP32101 www.vishay.com Vishay Siliconix 6.5 m, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 bidirectional switch features reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 m typ at 3.3 V on-resistance |
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SiP32101 12-Bump, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiP12109 www.vishay.com Vishay Siliconix 4 A, 4.5 V to 15 V Input Synchronous Buck Regulator DESCRIPTION FEATURES The SiP12109 is a high frequency current-mode constant on-time CM-COT synchronous buck regulator with integrated high-side and low-side power MOSFETs. Its |
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SiP12109 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: V10P10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement |
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V10P10 J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: V12P10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automatic placement |
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V12P10 J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: V10P12 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm TMBS eSMP® Series Available • Ideal for automated placement |
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V10P12 AEC-Q101 O-277A J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Part Marking Information www.vishay.com Vishay Semiconductors SMF400 FRED Pt E1 AH 1st row First digit = Year E = 2013; F = 2014; G = 2015; H = 2016. Second digit: Month (1 = Jan; 2 = Feb; . O = Oct; N = Nov; D = Dec) 2nd row First digit: Current/Voltage Rating |
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SMF400 16-Dec-13 | |
Contextual Info: V8PM12-M3, V8PM12HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES • Very low profile - typical height of 1.1 mm TMBS eSMP® Series Available |
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V8PM12-M3, V8PM12HM3 J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: V8P12 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES ® TMBS eSMP Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement |
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V8P12 AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
BA 49181
Abstract: AT91SAM9G45b AT91SAM9G45B-CU TD 346 sam9g45 atmel 935 TA 49181 49110 NR 3M EMC Products se 047 equivalent
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ARM926EJ-STM 64-KByte 6438I 16-Dec-11 BA 49181 AT91SAM9G45b AT91SAM9G45B-CU TD 346 sam9g45 atmel 935 TA 49181 49110 NR 3M EMC Products se 047 equivalent | |
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1160 MHz 20.0 VDC 2160 MHz Tuning Voltage: 0.5 Supply Voltage: 9.5 10.0 10.5 VDC Output Power: +2.0 +4.5 +7.0 dBm 30 mA Pushing: 1.5 |
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10kHz 100kHz CVCO55BE-1160-2160 16-Dec-10 | |
Contextual Info: AC DC 180 Watts ECP180 Series xppower.com • Low 1” Profile with 2” x 4” Footprint • 120 W Convection / 180 W Forced cooled • High Efficiency • Medical & ITE Approvals • Built in Fan Supply • <0.5 W No Load Input Power • 3 Year Warranty |
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ECP180 SVH-21T-P1 16-Dec-13 ECP180 | |
Contextual Info: DG444, DG445 www.vishay.com Vishay Siliconix Quad SPST CMOS Analog Switches APPLICATIONS FEATURES • Audio switching • Low on-resistance: 50 • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits |
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DG444, DG445 DG211, DG212 DG445 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: UFS08A2.8L04 DESCRIPTION Brightking's UFS08A2.8L04 component is designed to protect low voltage state-of-the-art CMOS semiconductors from transients caused by electro-static discharge ESD , cable discharge events (CDE), lightning and other induced voltage surges. |
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UFS08A2 IEC61000-4-2 SOIC-08 041REF 04REF 16-Dec-11 | |
VBUS053AZ-HAFContextual Info: VBUS053AZ-HAF Vishay Semiconductors USB-OTG BUS-Port ESD-Protection for VBUS = 12 V FEATURES • Ultra compact LLP75-7L package 6 5 • Low package height < 0.6 mm 4 • 3-line USB ESD-protection with max. working range = 5.5 V • VBUS - protection with 12 V working range |
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VBUS053AZ-HAF LLP75-7L 2002/95/EC 2002/96/EC 11-Mar-11 VBUS053AZ-HAF | |
Contextual Info: UES08A05L04 DESCRIPTION Brightking's UES08A05L04 has been specifically designed to protect sensitive components which is connected to data and transmission lines from overvoltage caused by electrostatic discharge ESD , electrical fast transients (EFT) , and lightning. |
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UES08A05L04 UES08A05L04 8/20us) IEC61000-4-2 SOIC-08 041REF 04REF 16-Dec-11 | |
Contextual Info: UDT23A12L02 DESCRIPTION Brightking's UDT23A12L02 component is ultra low capacitance TVS arrays designed to protect high speed data interfaces.This series has been spe-cifically designed to protect sensitive components which are connected to high speed data and transmission lines from overvoltage caused by ESD |
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UDT23A12L02 UDT23A12L02 IEC61000-4-2 OT-23 16-Dec-11 | |
DCA50Contextual Info: SMD Power Inductor CDBH128 Description • Ferrite core construction. • Magnetically shielded. • L W H: 13.0 12.8 8.0mm Max. • Product weight: 5.4g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x × Halogen |
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CDBH128 250pcs dec6-3266 16-Dec-11 DCA50 | |
Contextual Info: VS-ST203C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors Hockey PUK Version , 370 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • International standard case TO-200AB (A-PUK) |
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VS-ST203C O-200AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SAM9M10Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static |
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ARM926EJ-Sâ 64-KByte 6355Eâ 16-Dec-11 SAM9M10 |