Untitled
Abstract: No abstract text available
Text: The line up for the small 2 3 Device Parallel schottky barrier diode has increased. ★ For signal Line Level shift. ★ High speed signal switching. TYPE. NO. VRM IO * VF@IO LOW IR SBD 30V 100mA 0.53V Max. PC・Cellular LOW VF SBD 30V 100mA 0.43V Max. PHS・Hybrid IC
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RB480Y
RB481Y
RB480K
RB481K
RB731XN
1612size
100mA
200mA
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RB053L-30
Abstract: No abstract text available
Text: Schottky barrier diode Silicon Epitaxial Planer RB063L-30 Limits Reverse voltage (repetitive peak) VRM 30V Reverse voltage (DC) VR IO* 30V IFSM 70A Average rectified forward current Forward current surge peak (60Hz: ) DIMENSION (UNIT:mm) CATHODE MARK 1.5±0.2
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RB063L-30
100mA
RB053L-30
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ultra low drop, high current diode
Abstract: sot23 a60 SOD123 footprint sot23 footprint PBSS4160T PBSS4350X PBSS5240V PMEG1020EV PMEG3005AEA PMEM4010PD
Text: Semiconductors Taking the heat out of transistors and rectifiers Philips’ highly efficient low VCEsat BISS transistors and ultra low VF (MEGA) Schottky barrier rectifiers All electronic switches drain power and generate heat. But what could you do with transistors and rectifiers that are significantly more
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Original
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OT666
PBSS5240V
ultra low drop, high current diode
sot23 a60
SOD123 footprint
sot23 footprint
PBSS4160T
PBSS4350X
PMEG1020EV
PMEG3005AEA
PMEM4010PD
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PDF
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