1611C Search Results

K4E641611D

Abstract: K4E661611D
Contextual Info: K4E661611D, K4E641611D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this

1KJK

Contextual Info: tiic k ic o n ALUMINUM ELECTROLYTIC CAPACITORS series Law Impedance Long Life Approved A hi i-Solvent Feature iThnough * Low impedance and high reliability withstanding 5000 hours load life at + 1 05°c 3000/2000 hours for smaller case sizes as specified below .

Ericsson TSR 491 628

Abstract: NT 1307c ericsson TSR 491 641 Ericsson nokia 1600 schematic diagram schematic diagram UPS active power 600 schematic diagram UPS 600 Power free marking code H02 schematic diagram UPS active power 400 tsi620-10gclv
Contextual Info: Tsi620 RapidIO Switch / RapidIO-to-PCI Bridge User Manual Preliminary October 2007 80D7000_MA001_02 Titlepage Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi620, and Silicon Behind the Network, are trademarks of Tundra Semiconductor Corporation.

SL1611

Abstract: SL1612 Plessey ssb transceiver 1610c SL1610 SL1611C 1612C GEC Plessey amplifier SL1610C SL1612C
Contextual Info: 4 0 4 - GEC PLESSEY | S E M I C O N D U C T O R~S~] _ S L 1611 IS FO R M A IN T E N A N C E P U R P O S E S O N L Y A N D IS N O T R E C O M M E N D E D F O R N E W D E S IG N S SL1610, SL1611, SL1612 R F/IF AMPLIFIERS The SL1610C, 1611C and SL1612C are RF voltage

30MHz agc circuit

Abstract: SL1611C "RF IF Amplifiers" SL1610 SL1610C SL1611 SL1612 SL1612C L16-10C
Contextual Info: GEC PLESSEY ISEMICONDUCTORS I SL1611 IS FOR MAINTENANCE PURPOSES ONLY AND IS N O T RECOMMENDED FOR NEW DESIGNS SL1610, SL1611, SL1612 RF/IF AMPLIFIERS The SL1610C, 1611C and SL1612C are RF voltage am plifiers with AGC facilities. The voltage gains are 10, 20

k4e641611c

Contextual Info: 1611C, 1611C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this

Contextual Info: GEC PLESSEY w t S E M I C O N D U C T O R S DS 3299- 1 SL1610 RF/IF AMPLIFIER The SL1610C RF voltage am plifier with AGC facilities. The voltage gain is 10 and the upper frequency response is 120MHz. nc [ ] ov J AGC VCc [ SL1610 O UTPUT[ ] INPUT BIAS INPUT EARTH [

S5 100 B112 MT RELAY

Abstract: konica IR sensor DVB-T Schematic set top box MIL-STD-291C Digital Panel Meter PM 428 S5 100 B112 RELAY DVB-C receiver schematic diagram service manual tv seg pacific
Contextual Info: Test & Measurement Catalog 2015 Chapter Contents Page Company profile ❙❙ Our business fields and products 2 1 Aerospace and defense test solutions ❙❙ Radar test systems ❙❙ ILS test system 6 2 Wireless ­communications testers and systems ❙❙ Wireless device testers

Contextual Info: 11111 PL138-48 1 2.5V-3.3V Low-Skew 1-4 Differential PECL Fanout Buffer FEATURES DESCRIPTION • C&A1D' 9A97 '612*+#*+1,+$-,1C&).&)1.6'A*11 • /&).&)1 A90&97123141567*1 • 8C1991)6991D'(9A97)'61'7.&)1.6'A*1 • 

K4F641611D-TC

Abstract: K4F661611D K4F661611D-TC K4F641611D
Contextual Info: K4F661611D, K4F641611D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time ( -50 or -60) are optional features of this family. All of this family

SL1611C

Abstract: SL1612C SL1612
Contextual Info: SL1610/SL1611/SL1612C PLESSEY Semiconductors SL1610C, 1611C, SL1612C RF/IF AMPLIFIERS The SL1610C, 1611C and SL1612C are RF voltage am plifiers with AGC facilities. The voltage gains are 10, 20 and 50 tim es respectively and the upper frequency res­ ponse varies from 15 M Hz to 120 M Hz according to type.

Plessey ssb transceiver

Abstract: SL1612C GEC Plessey amplifier sl1612 SL1610 SL1610C plessey SL1610 plessey DS3846
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS DS3846 - 1.0 SL1610 & SL1612 RF/IF AMPLIFIER The SL1610C and SL1612C are RF voltage amplifier with AGC facilities. The voltage gain is 10, 20 and 50 times respectively and the upper frequency response varies from

Contextual Info: IDT Tsi620 RapidIO Switch / RapidIO-to-PCI Bridge  User Reference Manual June 4, 2013 Formal Status GENERAL DISCLAIMER Integrated Device Technology, Inc. "IDT" reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or

SL1612 Plessey

Contextual Info: GEC PLESSEY S EMI CONDS 43E D • 37böSa5 0G13MTE D I PL SB GEC PLESSEY I S E M I C O N D U C T O R S I SL1611 IS FOR M AIN TEN AN CE PURPOSES O N LY A N D IS N O T RECOM M ENDED FOR NEW DESIGNS SL1610, SL1611, SL1612 RF/IF AMPLIFIERS The SL1610C, 1611C and SL1612C are RF voltage

K4F641611C-TC

Abstract: K4F661611C-TC
Contextual Info: 1611C, 1611C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time ( -50 or -60) are optional features of this family. All of this family