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    160 GERMANIUM TRANSISTOR Search Results

    160 GERMANIUM TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    160 GERMANIUM TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking N1

    Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
    Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave

    transistor marking N1

    Abstract: LNB ka band Germanium power
    Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band Germanium power

    BFU725F

    Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power

    BFU725F

    Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F OT343F JESD625-A BFU725F germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference Germanium power

    Germanium Transistor

    Abstract: Germanium power ON5088,115
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF ON5088 OT343F JESD625-A Germanium Transistor Germanium power ON5088,115

    2.4 ghz transistor wifi amplifier

    Abstract: Germanium power 160 germanium transistor wifi lna Ghz dB transistor
    Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.1 — 16 November 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU768F OT343F JESD625-A 2.4 ghz transistor wifi amplifier Germanium power 160 germanium transistor wifi lna Ghz dB transistor

    ON5088

    Abstract: germanium NPN germanium transistors NPN JESD625-A SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF ON5088 OT343F JESD625-A ON5088 germanium NPN germanium transistors NPN SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power

    BFU760F

    Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
    Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU760F OT343F JESD625-A BFU760F bfu760 dielectric resonator oscillator germanium transistor table Germanium power

    2.4 ghz transistor wifi amplifier

    Abstract: Germanium power
    Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU768F OT343F JESD625-A 2.4 ghz transistor wifi amplifier Germanium power

    Germanium power

    Abstract: No abstract text available
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF ON5088 OT343F JESD625-A Germanium power

    Untitled

    Abstract: No abstract text available
    Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU760F OT343F JESD625-A

    marking s20 SMD Transistor

    Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
    Text: 62 7  & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.


    Original     		PDF BFU730LX OT883C JESD625-A marking s20 SMD Transistor sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power

    2N600

    Abstract: Germanium PNP - Low Power Transistors
    Text: 2N600 Ge PNP Lo-Pwr BJT 8.25 Transistors Bipolar Germanium PNP L. 1 of 2 Home Part Number: 2N600 Online Store 2N600 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 2N600 com/2n600 2N600 Germanium PNP - Low Power Transistors

    2N2832

    Abstract: 2N2833 2N2834 MP1612B 2n2526
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 GERMANIUM POWER TRANSISTORS Typ* Himbfr Mia, Dtmtt JtoC we ABSOLUTE MAX. RATINGS Ic A I. A BVefa V 6V,*, V BK . V Mat. la. 9 Mm. va M°C A YC,


    Original     		PDF 200ft 2N2832 2N2833 2N2834 MP1612B 2n2526

    BFU790F

    Abstract: JESD625-A Germanium power
    Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU790F OT343F JESD625-A BFU790F Germanium power

    transistor zs 35

    Abstract: Germanium power
    Text: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F Nov-19-2004 transistor zs 35 Germanium power

    JESD625-A

    Abstract: BFU710F DRO lnb Germanium power
    Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU710F OT343F JESD625-A BFU710F DRO lnb Germanium power

    germanium transistor ac 125

    Abstract: No abstract text available
    Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU730F OT343F JESD625-A germanium transistor ac 125

    TI159

    Abstract: TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor
    Text: TYPES TI159, TI 160, TI 161, TI162 P-N-P ALL0Y-JUNCTI0N GERMANIUM MEDIUM-POWER TRANSISTORS NO. DL-S 634413, DECEMBER 1963 The transistors a re in h erm etically-sealed w e ld e d leads. A p p ro x im a te weight: 4.8 gram s. cases with glass-to-m etal seals betw een case a n d


    OCR Scan     		PDF TI159, TI162 TI161, TI159 TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor

    DTG-600

    Abstract: DTG-2400 2N2733 DTG-1010 2N4278 DTG-110B 2N4277 2N4280 dtg 600 DTG-601
    Text: GERMANIUM POWER TRANSISTORS Type Number CURRENT GAIN Case Type Vc.„ V V ceo MT-23 MT-23 MT-22 MT-22 MT-22 60 40 80 60 40 45 30 60 45 30 2N4276 2N4277 2N4278 2N4279 2N4280 TO-3 TO-3 TO-3 TO-3 TO-3 30 30 45 45 60 20 20 30 30 45 20 20 25 25 30 30 30 45 45 60


    OCR Scan     		PDF SDT1909 MT-23 SDT1910 SDT2008 MT-22 SDT2009 SDT2010 DTG-600 DTG-2400 2N2733 DTG-1010 2N4278 DTG-110B 2N4277 2N4280 dtg 600 DTG-601

    1N4785

    Abstract: 2N5155 2N2526 2N3731 2N2147 2N2832 MP1612 2N3732 2N2148 2N2527
    Text: GERMANIUM POWER TRANSISTORS Type N um ber M in. Derate J to C W /° C A B S O L U T E M A X . R A T IN G S Ic A I» A f>Kao V B V cto V B V cco V M ax. I cbo @ Max. Vco @ 25 °C A Ah Bias Va V Ic A Min. M ax. f Hz M ax. Sat. Res. Q M ax. Pc Free A ir 9 2S°C


    OCR Scan     		PDF MP1612 MP1612A MP1612B MP1613 2N2147 2N2148 500fj r-33H MT-27 MT-28 1N4785 2N5155 2N2526 2N3731 2N2832 2N3732 2N2527

    1N4785

    Abstract: 2N2147 MP1612B 2N2526 2N2148 2N2832 2N3731 Germanium Power Devices 2n2834 2N3730 2N5435
    Text: GERMANIUM POWER TRANSISTORS Type Number Min. Derate JtoC W/°C ABSOL UTE MAX. RA TINGS Ic A b A BVcbo V BVC, „ V BVceo V Max. Icbo @ Max. V co @ 2S°C A hfc V„ V Bias Ic A Min. Max. Hl Max. Sat. Res. 2 Max. Pc Free Air @ 2S°C W .03 .03 .03 85 85 85


    OCR Scan     		PDF MP1612 MP1612A MP1612B MP1613 2N2147 2N2148 2N1905 150T-36 8-32NC-2A NS257 1N4785 2N2526 2N2832 2N3731 Germanium Power Devices 2n2834 2N3730 2N5435

    transistor K52

    Abstract: germanium transistor pnp GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium pnp germanium transistor mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS power ac audio transistor small signal transistor
    Text: EDISW A N MAZDA X C IO I AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE GEN ERAL The X C IO I is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can.


    OCR Scan     		PDF

    2N2156

    Abstract: 2N2152 2N2153 2N2154 2N215 2N2157 2N2158 Germanium power
    Text: 2N21 52. THRU 2N2154 2N2156 THRU 2N2Ì58 '«frifcI Ä »% §&#*•##%151%gf#i i%» »% |#-r ♦I ¡rf Central Sem iconductor Corp. Central semiconductor Corp. GERMANIUM PNP POWER TRANSISTOR 170 WATTS 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 JEDEC TO-36 CASE


    OCR Scan     		PDF 2N2152 2N215 2N2156 2N2153 T0-36 2N2152, 2N2153 2N2154 2N2157 2N2158 Germanium power