16 X 2 BIT MEMORY Search Results

s71vs128

Abstract: S71VS064R S71VS128R mediatek Spansion NS064N S71VS256 S71VS256R NS064N NS256N S71NS064NA0
Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

S71NS128P

Abstract: S71NS-N NS064N S29NS-N S71NS064NA0 marking bjw S71NS064NA0-RA
Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

S71VS256R

Abstract: S71VS128R
Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

Spansion NS064N

Abstract: S71NS128P ns064n S71NS064NA0 Spansion NAND Flash DIE S29NS-N S71NS-N PSRAM* MuxpSRAM JEP95
Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

S71VS128R

Abstract: S71VS marking bjw S71VS064R S71NS-N NS064N S29NS-N S71NS064NA0 Spansion NAND Flash S71NS064N80-RA
Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

ADQ15

Abstract: S71NS256P S71NS128P JEP95
Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burstmode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit) and 16 Mb (1 Mb x 16-bit)

ES29LV160F

Abstract: SA10
Contextual Info: ES29LV160F 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory ES29LV160F Excel Semiconductor Inc. ES29LV160F 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory Main Characteristics Architectural Advantages

Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM: 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit)

S71NS064NA0

Abstract: A-DQ15 NS064N S29NS-N S71NS-N
Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM: 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit)

JEP95

Abstract: S71NS256PB0 s71ns256pc0
Contextual Info: S71NS-P Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode Multiplexed pSRAM 256 Mb 16 Mb x 16-bit and 128 Mb (8 Mb x 16-bit) Flash 64 Mb (4 Mb x 16-bit), and 32 Mb (2 Mb x 16-bit) pSRAM

Contextual Info: S71NS-P Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode Multiplexed pSRAM 256 Mb 16 Mb x 16-bit and 128 Mb (8 Mb x 16-bit) Flash 64 Mb (4 Mb x 16-bit), and 32 Mb (2 Mb x 16-bit) pSRAM

s71ns256pc0

Abstract: Spansion NAND Flash LF35 S29NS-P S71NS-P S71NS128PB0 S71NS256P
Contextual Info: S71NS-P Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode Multiplexed pSRAM 256 Mb 16 Mb x 16-bit and 128 Mb (8 Mb x 16-bit) Flash 64 Mb (4 Mb x 16-bit), and 32 Mb (2 Mb x 16-bit) pSRAM

S71NS256PB0

Contextual Info: S71NS-P Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode Multiplexed pSRAM 256 Mb 16 Mb x 16-bit and 128 Mb (8 Mb x 16-bit) Flash 64 Mb (4 Mb x 16-bit), and 32 Mb (2 Mb x 16-bit) pSRAM

DL161

Abstract: DL162 DL163
Contextual Info: PRELIMINARY Am42DL16x2D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

M410000002

Abstract: DL161 DL162 DL163 AM41DL1644DT
Contextual Info: PRELIMINARY Am41DL16x4D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

Am29N643

Abstract: ns064j0lb 5M-199 s29ns032 s99d
Contextual Info: S29NS128J/S29NS064J/S29NS032J/ S29NS016J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories Distinctive Characteristics

Contextual Info: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,

Contextual Info: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,

DS42514

Contextual Info: DS42514 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DS42515

Contextual Info: DS42515 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL164D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DS42546

Contextual Info: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DSP56852

Contextual Info: DSP56852/D Rev. 6.0 2/2004 DSP56852 Preliminary Technical Data DSP56852 16-bit Digital Signal Processor • 120 MIPS at 120MHz • Interrupt Controller • 6K x 16-bit Program SRAM • General Purpose 16-bit Quad Timer • 4K x 16-bit Data SRAM • 1K x 16-bit Boot ROM

PLL 120Mhz

Abstract: A-1718 TAG 034 DSP56852
Contextual Info: DSP56852/D Rev. 5.0 2/2004 DSP56852 Preliminary Technical Data DSP56852 16-bit Digital Signal Processor • 120 MIPS at 120MHz • Interrupt Controller • 6K x 16-bit Program SRAM • General Purpose 16-bit Quad Timer • 4K x 16-bit Data SRAM • 1K x 16-bit Boot ROM