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    15N120 Search Results

    15N120 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TRS15N120HB Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    TW015N120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
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    15N120 Price and Stock

    Rochester Electronics LLC NGTB15N120IHRWG

    IGBT TRENCH FS 1200V 30A TO-247
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    DigiKey NGTB15N120IHRWG Bulk 13,477 149
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    Rochester Electronics LLC IRG8P15N120KD-EPBF

    IGBT 1200V 30A TO-247AD
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    DigiKey IRG8P15N120KD-EPBF Bulk 8,125 90
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    Rochester Electronics LLC IRG8P15N120KDPBF

    IGBT 1200V 30A TO-247AC
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    DigiKey IRG8P15N120KDPBF Bulk 6,484 108
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    Rochester Electronics LLC NGTB15N120LWG

    IGBT TRENCH FS 1200V 30A TO-247
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    DigiKey NGTB15N120LWG Tube 4,987 193
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    Rochester Electronics LLC HGT1S15N120C3

    IGBT 1200V 35A TO-262
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    DigiKey HGT1S15N120C3 Bulk 4,004 75
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    15N120 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    15N120C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    15N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		15N120C O-247 O-268 PDF

    15N12

    Abstract: 575 C2
    Text: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES


    Original     		15N120B O-220AB O-263 15N12 575 C2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW


    Original     		15N120B O-247 PDF

    IC IGBT 15N120

    Abstract: 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits
    Text: IXRP 15N120 IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability IXRP 15N120 C IXRA 15N120 TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector


    Original     		15N120 O-220 O-263 O-220 IC IGBT 15N120 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits PDF

    15N120

    Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS
    Text: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C


    Original     		15N120 O-220 20070703a 15N120 IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS PDF

    15N120BD1

    Abstract: 15N120 15N120CD1 IXGT15N120BD1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		15N120BD1 15N120CD1 O-247AD 15N120BD1 15N120 15N120CD1 IXGT15N120BD1 PDF

    IXSH15N120B

    Abstract: No abstract text available
    Text: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200


    Original     		15N120B O-247 O-268 O-247) 13/1or IXSH15N120B PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C


    Original     		15N120C O-220AB O-263 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms


    OCR Scan     		15N120AU1 O-247 -100/ps; PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		15N120C O-220AB O-263 O-220 PDF

    RGE 17-18

    Abstract: TO220-4 weight
    Text: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i


    OCR Scan     		15N120C O-220 O-263 RGE 17-18 TO220-4 weight PDF

    15N120

    Abstract: No abstract text available
    Text: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		15N120BD1 15N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM


    OCR Scan     		15N120C PDF

    IC IGBT 15N120

    Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT
    Text: IXRH 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability C TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions


    Original     		15N120 O-220 O-263 O-263 O-220 IC IGBT 15N120 15n120 "bi-directional switches" IGBT bi-directional switches IGBT PDF

    001-045

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20


    OCR Scan     		15N120B 15N120B O-268 001-045 PDF

    RGE 17-18

    Abstract: 10i2 TRI 1461
    Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGA 15N120B IXGP 15N120B V CES IC25 V CE sat ^ fi(typ) Symbol T e s tC o n d itio n s V CES ^ = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES V GEM Continuous ±20 V


    OCR Scan     		15N120B 15N120B T0-220 O-263 RGE 17-18 10i2 TRI 1461 PDF

    15N120BD1

    Abstract: 15N120CD1 IXGT15N120BD1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		15N120BD1 15N120CD1 O-247AD O-268 15N120CD1 IXGT15N120BD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V


    Original     		15N120B 15N120B O-220 O-263 PDF

    15n120

    Abstract: No abstract text available
    Text: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


    Original     		15N120 O-263AB 20110120b 15n120 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20


    Original     		15N120B 15N120B O-247 O-268 O-268AA PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V IC25 = 30 A VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20


    Original     		15N120B 15N120B O-247 O-268 O-268AA PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


    Original     		15N120B O-268 O-247 O-247) PDF

    IC IGBT 15N120

    Abstract: 15n120 H1AA1 "bi-directional switches" IGBT 15n120 igbt
    Text: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


    Original     		15N120 O-220AB 20110120b IC IGBT 15N120 15n120 H1AA1 "bi-directional switches" IGBT 15n120 igbt PDF

    IC IGBT 15N120

    Abstract: bi-directional switches IGBT 15n120
    Text: IXRA 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


    Original     		15N120 O-263AB 20110120b IC IGBT 15N120 bi-directional switches IGBT 15n120 PDF