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    15N 50 MOSFET Search Results

    15N 50 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    15N 50 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sgsp531

    Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92


    Original     		VN0640N2 TX106 IRF712 VN0340N2 MTD1N40 MTD1N40-1 RFP1N40 IRFF312 IRFF312 sgsp531 2sk76 irf33 unitrode VN0340N5 sfn02806 stm231 stm331 650P PDF

    S0211

    Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72


    Original     		2N7109 S0215 ZVN3302B TN0102N3 TN0602N3 TN0102N2 TN0602N2 SOF8104 S0211 VN03000 2SK738 nec 500t 2sk738 mosfet 3N175 MPF6659 motorola *6659 2SK73 PDF

    GG 06

    Abstract: VN35010
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35


    Original     		UFN733 2N6759 SFN333 MTM5N35 MTP5N35 VN35010 GG 06 PDF

    KP902A

    Abstract: kp904a BFW96 s0212 3N138 MFE3002 3N138 mosfet 3SK72 KT904 SD2150E
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS IDss Max (V) tA) PD Max (W) 50m 50m 50m 50m 50m 50m 50m 1.0 1.0 250m 1.0 250m 40m 70m 360m 200m 150m 150m 150m 150m 150m 360m 20 20 625m 20 1.0 0.36 1.0 ros (on) (Ohms) 9FS Min (S) VGS(th) Clsa t, Max Max


    Original     		2N48S0A BFW96 3N139 3N138 SST211 NOS102B NOS101B KP902A kp904a s0212 MFE3002 3N138 mosfet 3SK72 KT904 SD2150E PDF

    SIEMENS 800

    Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80


    Original     		O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n PDF

    ccfl lamp circuit diagram

    Abstract: ccfl driver schematic 40 ccfl driver schematic ccfl lamp driver circuit diagram capacitor 470n 400V schematic diagram of ccfl inverter 2N7002-SOT23 schematic diagram 0-12v power supply philips ccfl inverter PHU2N50E
    Text: FACT SHEET Signal lamp CCFL application with the UBA2070 Philips Semiconductors Philips Semiconductors Signal lamp (CCFL) application with the UBA2070 FACT SHEET FACT SHEET Signal lamp (CCFL) application with the UBA2070 Author(s): Emile de Jong Philips Semiconductors BL Standard Analog


    Original     		UBA2070 MKP479, SMD0805, MKT368, ccfl lamp circuit diagram ccfl driver schematic 40 ccfl driver schematic ccfl lamp driver circuit diagram capacitor 470n 400V schematic diagram of ccfl inverter 2N7002-SOT23 schematic diagram 0-12v power supply philips ccfl inverter PHU2N50E PDF

    ccfl driver schematic

    Abstract: schematic diagram 0-12v power supply philips ccfl inverter ccfl lamp circuit diagram 12v schematic of fluorescent lamps charging control lm358 fluorescent lamp circuit diagram BAS216 8 CCFL Lamps Inverter circuit 6 ccfl inverter
    Text: FACT SHEET Desktop lamp CCFL application with the UBA2070 Philips Semiconductors Philips Semiconductors Desktop lamp (CCFL) application with the UBA2070 FACT SHEET FACT SHEET Desktop lamp (CCFL) application with the UBA2070 Author(s): Emile de Jong Philips Semiconductors BL Standard Analog


    Original     		UBA2070 MKP479, SMD0805, MKT368, ccfl driver schematic schematic diagram 0-12v power supply philips ccfl inverter ccfl lamp circuit diagram 12v schematic of fluorescent lamps charging control lm358 fluorescent lamp circuit diagram BAS216 8 CCFL Lamps Inverter circuit 6 ccfl inverter PDF

    15NB50

    Abstract: 15N 50 mosfet SWITCHING WELDING SCHEMATIC BY MOSFET
    Text: s = 7 SGS-THOMSON ^ 7# K l « iL iM ( s iO ( g S S T W 15N B 50 N - CHANNEL ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOSFET PRELIMINARY DATA TYPE STW 15N B50 . m . . . . . V dss RDS(on) Id 500 V < 0 .3 6 Î2 14.6 A TYPICAL F tD S ( o n ) =0.33 £1 EXTREMELY HIGH dv/dt CAPABILITY


    OCR Scan     		PDF

    F15N05L

    Abstract: F15N06L RFM15N06L RFM15N05L f15n05 RFP15N05L RFP15N06L tl225 RFP mosfets
    Text: 3875081 G E SOLID STATE 01 DE|3ö7SDfll GD1A452 □ | ~ d T m3 1 ~ l I Logic-Level Power MOSFETs _ RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L F ile N u m b e r 1558 Power Logic Level MOSFETs T E R M IN A L D IA G R A M N-Channel Logic Level Power Field-Effect Transistors L2 FET


    OCR Scan     		3fl75dfil RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L' PMP411A. F15N05L F15N06L f15n05 RFP15N06L tl225 RFP mosfets PDF

    LTRG

    Abstract: P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06
    Text: cu R FM 15N 05/15N 06 R FP15N 05/15N 06 HARRIS N-Channel Enhancement Mode Power Field Effect Transistors M ay 1992 Packages Features TO -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0V • rD S o n = 0 .1 4 f l SOURCE y • S O A is P o w e r -D is s ip a tio n L im ite d


    OCR Scan     		05/15N FP15N 32e-8 0e-10 68e-8 LTRG P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06 PDF

    15n05

    Abstract: RFP15N06
    Text: 4302H71 £ j H a 0054307 r r i • s HAS R F R F M 1 5 N 0 5 / 1 5 N 0 6 P 1 5 N 0 5 / 1 5 N 0 6 N-Channel Enhancement Mode Power Field Effect Transistors May 1992 Packages Features T O -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S o n = 0 . 1 4 n


    OCR Scan     		4302H71 Ie-30 81e-10 32e-8 0e-10 68e-8 15n05 RFP15N06 PDF

    F15N06L

    Abstract: RFP15N05L 15N05L F15N p15n06l FP15N05L
    Text: RFM 15N 05L/06L RFP15N05L/06L h a r r is N -Channel Logic Level Power Field-Effect Transistors L2 FET August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 15A, 5 0 V and 60 V • rD S (O N ) = 0 .1 4 n SOURCE f • Design O p tim ized for 5V G ate Drives


    OCR Scan     		05L/06L RFP15N05L/06L 9SCS37634 AN7254 AN-7260. F15N06L RFP15N05L 15N05L F15N p15n06l FP15N05L PDF

    F15N06L

    Abstract: No abstract text available
    Text: ti3G2271 0D5M773 Th? HAS R FM 15N 05L/06L R FP15N 05L/06L HARRIS N-Channel Logic Level Power Field-Effect Transistors L2 FET A ug ust 19 91 Package Features TO-204AA BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S (O N ) = 0 .1 4 « DRAIN /( F L A N G E )


    OCR Scan     		ti3G2271 0D5M773 05L/06L FP15N O-204AA T0-220A 9JCS-376S4 36I48 F15N06L PDF

    F15N05L

    Abstract: F15N06L f15n05 f15n06 N05L RFP15N06L 3SI4 RFM15N05L RFM15N06L RFP15N05L
    Text: R F M 1 5 N 0 5 L /0 6 L H A IR R IS RFP15N05L/06L N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features T0-204A A BOTTOM VIEW • 15A, 50V and 60V • rDS(ON) = 0 .1 4 0 DRAIN ^ {F L A N G E ) SOURCE • Design Optimized for 5V Gate Drives


    OCR Scan     		RFM15 N05L/06L RFP15N05L/06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L S2CS-3SI47 RFM15N05L, RFM15N06L, F15N05L F15N06L f15n05 f15n06 N05L 3SI4 PDF

    IRF250a

    Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


    OCR Scan     		O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* IRF250a MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20 PDF

    15N15

    Abstract: rfm15n15 diode RA 225 R
    Text: R FM 15N 12/15N 15 R FP15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d


    OCR Scan     		12/15N FP15N12/15N15 -204A FP15N12 RFP15N15 92CS-J4B52R1 92CS-36I45 15N15 rfm15n15 diode RA 225 R PDF

    MTH8P20

    Abstract: MTH13N50 MTH7N50 MTH30N20 MTH25N10 MTH15N20 MTH35N15 MTH20N15 MTH40N06 MTP2P45
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1


    OCR Scan     		O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTH8P20 MTH13N50 MTH7N50 MTH30N20 MTH25N10 MTH15N20 MTH35N15 MTH20N15 MTH40N06 MTP2P45 PDF

    motorola 15N 06VL

    Abstract: 15N 50 mosfet 15N06VL
    Text: MOTOROLA Order this document by MTD15N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T D 15N 0 6V L TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on “ 0.085 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		MTD15N06VL/D motorola 15N 06VL 15N 50 mosfet 15N06VL PDF

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20 PDF

    Untitled

    Abstract: No abstract text available
    Text: STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Î2 - 14.6A TO-247/ISOWATT218 PowerMESH MOSFET TYP E V STW 15NB50 STH15NB50FI dss 500 V 500 V R D S o n Id < 0 .3 6 Q. < 0.3 6 Q. 14 .6 A 10 .5 A TYPICAL R D S (on) = 0.33 . EXTREMELY HIGH dv/dt CAPABILITY . ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		STW15NB50 STH15NB50FI O-247/ISOWATT218 15NB50 avalancheSOWATT218 P025C PDF

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 PDF

    MTM15N35

    Abstract: 15N 50 mosfet 15N45
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S T M O S P O W E R FETs 15 A M P E R E S These TM O S Pow er FETs are designed fo r high v o lta g e , high


    OCR Scan     		MTM15N45, MTM15N35 15N 50 mosfet 15N45 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)


    OCR Scan     		NEM0995F06-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high


    OCR Scan     		MTP15N05EL RuggedO-220AB) Y145M 221D-02 O-220 Y145M, 314B03 O-220) PDF