Untitled
Abstract: No abstract text available
Text: SA 154. SA 160 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160 5 0
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1SS108
Abstract: HITACHI 1SS108 Hitachi DSA0014
Text: ADE-208-154 Z 1SS108 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Preliminary Rev. 0 Oct 1993 Features Outline H • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. 2
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ADE-208-154
1SS108
1SS108
DO-35
SC-48
HITACHI 1SS108
Hitachi DSA0014
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SOD-123 marking code 24
Abstract: SOD-123 marking code H3 SOD-123 marking code H5 zener marking code V SOD123 500mW zener sod SOD-123 marking code 1200 marking code T 7 SOD-123 SOD123 MARKING CODE sod123 SOD-123
Text: MMSZ5221B THRU 500mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~ 75V MMSZ5267B SOD-123 PACKAGE 500mW Power Dissipation Zener Voltages from 2.4~75V Ideally Suited for Automated Assembly Processes Moisture Sensitivity Level 1 .154 3.90 .130(3.30)
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MMSZ5221B
500mW
OD-123
MMSZ5267B
OD-123
OD-123,
MIL-STD-750,
MMSZ52XXB-TG
MMSZ52XXB-TH
SOD-123 marking code 24
SOD-123 marking code H3
SOD-123 marking code H5
zener marking code V SOD123
500mW zener sod
SOD-123 marking code 1200
marking code T 7 SOD-123
SOD123 MARKING CODE
sod123
SOD-123
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sa diode
Abstract: No abstract text available
Text: SA 154. SA 160 /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160 Forward Current: 1 A Reverse Voltage: 50 to 1000 V 5 0 ; < 6 < < - 2- 6 < < - : < - /9 7 4 18 7 . * #;2 #
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BZT52-C2V4
Abstract: BZT52-C2V7 BZT52-C3 BZT52-C3V3 BZT52-C3V6 BZT52-C3V9 BZT52-C4V3
Text: BZT52-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES 2.4 to 75 Volts POWER 410 mWatts SOD-123 Unit: inch mm FEATURES .154(3.90) .141(3.60) • Planar Die construction .110(2.8) .098(2.5) .028(0.7) .019(0.5) • 410mW Power Dissipation • Zener Voltages from 2.4~75V
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BZT52-C2V4
OD-123
410mW
2002/95/EC
OD-123,
MIL-STD-750,
BZT52-C2V7
BZT52-C3
BZT52-C3V3
BZT52-C3V6
BZT52-C3V9
BZT52-C4V3
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Untitled
Abstract: No abstract text available
Text: BZT52-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER Unit: inch mm SOD-123 410 mWatts FEATURES .154(3.90) .141(3.60) • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes
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BZT52-C2V4
OD-123
410mW
OD-123,
MIL-STD-750,
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w1 marking SOD 123
Abstract: SOD-123 JEDEC BZT52-C2V4 SOD-123 marking X2 w1 marking SOD-123 ZENER SOD-123 marking X2 W1 SOD-123
Text: BZT52-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER SOD-123 500 mWatts Unit: inch mm FEATURES .154(3.90) .141(3.60) • Planar Die construction .028(0.7) .019(0.5) • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes
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BZT52-C2V4
OD-123
500mW
OD-123,
MIL-STD-750,
V010-DEC
w1 marking SOD 123
SOD-123 JEDEC
SOD-123 marking X2
w1 marking SOD-123
ZENER SOD-123 marking X2
W1 SOD-123
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Untitled
Abstract: No abstract text available
Text: BZT52-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES 2.4 to 75 Volts POWER 410 mWatts SOD-123 Unit: inch mm FEATURES .154(3.90) .141(3.60) • Planar Die construction .110(2.8) .098(2.5) .028(0.7) .019(0.5) • 410mW Power Dissipation • Zener Voltages from 2.4~75V
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BZT52-C2V4
OD-123
2002/95/EC
OD-123,
MIL-STD-750,
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220 SOD-123
Abstract: SOD-123 BZT52-B4V3 BZT52-B4V7 BZT52-B5V1 BZT52-B5V6 BZT52-B6V2 BZT52-B6V8 BZT52-B7V5 BZT52-B8V2
Text: BZT52-B4V3 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 to 51 Volts POWER 410 mWatts Unit: inch mm SOD-123 FEATURES .154(3.90) .141(3.60) • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 4.3~51V • Ideally Suited for Automated Assembly Processes
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BZT52-B4V3
OD-123
410mW
OD-123,
MIL-STD-750,
220 SOD-123
SOD-123
BZT52-B4V7
BZT52-B5V1
BZT52-B5V6
BZT52-B6V2
BZT52-B6V8
BZT52-B7V5
BZT52-B8V2
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Untitled
Abstract: No abstract text available
Text: S30445 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current40 @Temp (øC) (Test Condition)154# V(RRM)(V) Rep.Pk.Rev. Voltage450 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)25#
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S30445
Current40
Voltage450
Current10m
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SA diode
Abstract: No abstract text available
Text: SA 154. SA 160 /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160 5 0 1 3) 4) 18 7 *. /9 7 4 /* 7 4 (.) ) ( / 7 4 . : Values Units < - : . ;$ . // 7 ( ( * ; < 6
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Untitled
Abstract: No abstract text available
Text: SA 154. SA 160 /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160 5 0 1 3) 4) 18 7 *. /9 7 4 /* 7 4 (.) ) ( /* 7 4 . : Values Units < - : . ;$ . // 7 ( ( * ; < 6
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SS1030
Abstract: No abstract text available
Text: SS1030 SCHOTTKY BARRIER DIODE SOD-123 FEATURES Unit: inch mm • General rectification .154(3.90) .141(3.60) • Small power mold type (PMDU) R .110(2.8) .098(2.5) .028(0.7) .019(0.5) • High reliability • Silicon epitaxial planar • In compliance with EU RoHS 2002/95/EC directives
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SS1030
OD-123
2002/95/EC
OD-123
MIL-STD-750
SS1030
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SSM6J215FE
Abstract: No abstract text available
Text: SSM6J215FE MOSFETs Silicon P-Channel MOS U-MOS SSM6J215FE 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 154 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.8 V)
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SSM6J215FE
SSM6J215FE
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Untitled
Abstract: No abstract text available
Text: SSM6J215FE MOSFETs Silicon P-Channel MOS U-MOS SSM6J215FE 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 154 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.8 V)
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SSM6J215FE
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"Microwave Diodes"
Abstract: barrier varactor
Text: Winter 2000 Issue Article High Performance Surface Mount Diode Technology for Microwave Wireless System Applications In recent years we have seen an enormous increase in the demand for discrete RF silicon semiconductors suitable for surface mount assembly.
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OT-23
OD-323.
"Microwave Diodes"
barrier varactor
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GBU 08
Abstract: gbu08 gbu BRIDGE RECTIFIER bridge diode 6A
Text: Bulletin I2718 rev. E 05/02 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated Suitable for Universal hole mounting IO AV = 6A VRRM = 50/ 800V Easy to assemble & install on P.C.B. High Surge Current Capability
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I2718
MIL-STD-750
E160375
GBU 08
gbu08
gbu BRIDGE RECTIFIER
bridge diode 6A
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DIODE RECTIFIER BRIDGE SINGLE
Abstract: full wave bridge rectifier 6GBU Series
Text: Preliminary Data Sheet I2718 rev. C 06/01 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features IO AV = 6A VRRM = 50/ 800V Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability
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I2718
MIL-STD-750
E215862
DIODE RECTIFIER BRIDGE SINGLE
full wave bridge rectifier
6GBU Series
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GBU 08
Abstract: D0801
Text: Preliminary Data Sheet I2718 rev. D 08/01 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability High Isolation between terminals and molded case 1500 VRMS
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I2718
MIL-STD-750
E215862
GBU 08
D0801
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GBU 08
Abstract: bridge diode 6A
Text: PART OBSOLETE - EOL18 Bulletin I2718 rev. E 05/02 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated IO AV = 6A VRRM = 50/ 800V Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability
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EOL18
I2718
MIL-STD-750
E160375
Brid50
GBU 08
bridge diode 6A
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Untitled
Abstract: No abstract text available
Text: ADE-208-154 Z 1SS108 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Features Preliminary Rev. 0 Oct 1993 Outline • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
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1SS108
ADE-208-154
DO-35
1SS108
DO-35
SC-48
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74LS154
Abstract: circuit diagram of 74ls154 G1.L 74LS154 truth table decoder 74LS154 pin diagram of 74ls154 M24B MM74HC154 MM74HC154MTC MM74HC154N
Text: s e m ic o n d u c t o r Revised February 1999 MM74HC154 4-to-16 Line Decoder General Description T he M M 74H C 154 d ecoder utilizes advanced silicon-gate C M O S technology, and is well suited to m em ory address decoding or d ata routing applications. It possesses high
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MM74HC154
4-to-16
74LS154
circuit diagram of 74ls154
G1.L
74LS154 truth table
decoder 74LS154
pin diagram of 74ls154
M24B
MM74HC154MTC
MM74HC154N
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAT 15- . 2 R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-022 R - Q62702-D1265
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Q62702-D1265
Q62702-D1282
Q62702-D1291
Q62702-D1273
EHA070M
fi235b05
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Q62702-B328
Abstract: siemens 153 marking CE diode diode MARKING CE
Text: BB 804 Silicon Dual Tuning Diode Application in FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform “ square law" C-V characteristics Ideal hifi tuning device when used in low distortion back-to-back configuration Available in capacitance subgroups1 for convenient tuner alignment
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Q62702-B328
Q62702-B356
Q62702-B328
siemens 153
marking CE diode
diode MARKING CE
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