152AA Search Results

152AA-01

Abstract: 0201 footprint marking 2x
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DSN2, 0.6x0.3, 0.4P, 0201 CASE 152AA−01 ISSUE O DATE 06 MAY 2009 SCALE 8:1 A B D 2X DIM A A1 b D E e L E 0.06 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.

NSR01L30NXT5G

Contextual Info: NSR01L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

NSR02F30NXT5G

Contextual Info: NSR02F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

024 marking bidirectional diode

Abstract: smd diode marking coding
Contextual Info: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

NSR02F30NXT5G

Contextual Info: NSR02F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

Contextual Info: 10 M AT'L NO. ENG NO. 15-2A-A7A2 A-8981-AVÓ-LF '.5 3 .3 7 5 l„78± 0„Q 8 0 .7 4 .0 7 0 ± . 0 0 3 - , P L A T E D 0 .1 0 /.0 0 4 .0 2 9 2.00 .0 7 9 B~ -0- , 1 / 5 .0 8 1.50 + 0 . 0 8 LZ !_ .0 5 0 (3 X ) .¿ u u 0 5 9 ± .0 0 3 (N O N - P L A T E D )

Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,

Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,

Contextual Info: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

CK70AW

Contextual Info: TUSONIX CAPACITO CERAMIC*RS TUSONIX Types 2425, 2499,2433, 2450 and 327 are sealed into a heavy metal housing at both ends with a low loss thermosetting phenolic. Capacitance values of these feed-thru caps range from 10OOpF to 1500pF for the 500V and MIL types and 100pF to

NSR01L30NXT5G

Contextual Info: NSR01L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

Contextual Info: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

Contextual Info: NSR02L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,

TVS 0201 Diode

Abstract: PNC0106A 024 marking bidirectional diode
Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,

NSR02L30NXT5G

Abstract: 0201 footprint
Contextual Info: NSR02L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

024 marking bidirectional diode

Abstract: laptop pcb circuits smd diode marking coding smd diode marking code 0s
Contextual Info: ESD11B5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

NSR01F30NXT5G

Contextual Info: NSR01F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,

NSR01F30NXT5G

Contextual Info: NSR01F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

Contextual Info: NSR02F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No−lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN

Contextual Info: ESD11B5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

Contextual Info: in t e l October 1998 N o tic e : T his docum ent contains inform ation on products in th e design phase o f developm ent. Do not fin al­ ize h design w ith this inform ation. R evised in ib n n a tio n will be p u blished w hen the pro d u ct is available.

CK80

Contextual Info: TOSONIX STAND-OFF CERAMIC CAPACITORS A P PLIC A TIO N Superior choice for VHF & UHF by-pass and tuner circuits. MIL too. Stand-Off capacitors are widely used for the dual purpose of by­ passing R.F. current to ground and mechanically supporting other circuit elements. They are especially