150WC Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

27c256-200

Abstract: 27C256-70 eprom 27c256 27C256-3 cerdip z PACKAGE eprom 27c256 28 PIN DIP 150 NS 27C256 27C256-2 27C256-45 CY27C256
Contextual Info: V CY27C256 CYPRESS Features • W ide speed range — 45 ns to 200 ns com m ercial and m ilitary • Low power — 248 raW (commercial) — 303 mW (m ilitary) • Low standby power — Less th a n 83 raW when deselected • ± 10% Power supply tolerance

27C010-70

Abstract: 1N3064 27C010 C0104 CY27C010
Contextual Info: W r* CYPRESS Features ADVANCED INFORMATION 128K X 8 CMOS EPROM Functional Description • CMOS for optimum speed/power • High speed — — 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 1 0 0 % reprogrammable in the

1N3064

Abstract: 27C040 CY27C040
Contextual Info: '0CYPRESS ADVANCED INFORMATION 512K X Functional Description Features • CMOS for optimum speed/power • High speed — *AA = 70 ns max. • Low power — 140 mW max. — Less than 550 jiW when deselected • Byte-wide memory organization • 100% reprogrammable in the

Contextual Info: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance

64150J

Contextual Info: CY27C64 ïj CYPRESS 8K x 8 EPROM Features • TTL-corapatible I/O • CMOS for optimum speed/power Functional Description • Windowed for reprogrammability • High speed — 70 ns commercial • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power

1N3064

Abstract: 27C020 CY27C020 27C020-120 CY27C020-200DMB
Contextual Info: i f CYPRESS 256K x 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — *aa — 70 ns max. • Low power — 140 mW max. — Less than 550 jiW when deselected • Byte-wide memory organization • 100% reprogrammable in the

27C64-120

Abstract: 27C64-70 27C64 CY27C64 CY7C266 27C6470 27C61 27C64-90
Contextual Info: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power

27C64-150

Abstract: 27C64-3 eprom 27c64 27C64 27C64-1 27C64-2 27C64-200 CY27C64 27C644 27C64 8k EPROM
Contextual Info: fax id: 3006 1CY 27C6 4 CY27C64 8K x 8 EPROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these EPROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

27C010-90

Contextual Info: CYPRESS Features • • • 128K x 8 CMOS EPROM Functional Description C M O S for optim um speed/pow er High speed — *aa = 70 n s m ax. Low power — 220 mW m ax. — Less than 85 mW when d eselected • Byte-w ide m em ory organization • 100% reprogram m able in the

27C512

Abstract: 27C512-15 27C512-150 eprom 27C512 CY27C512
Contextual Info: r CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

Contextual Info: LOW RANGE INDUSTRIAL WET/WET DIFFERENTIAL TRANSMITTER MADE IN USA NIST FM APPROVED Model PX82B0-100WCDI Shown Smaller Than Actual Size PX82 Series 4-20 mA Output 0-50 to 800 in H2O 0-125 to 0-2,000 mbar Differential Pressure 1 psi = 27.68 in-H20 1 bar = 14.5 psi

Contextual Info: wf/ CYPRESS ADVANCED INFORMATION 512Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — * A A = 70 ns max. • Low power — 140 mW max. — Less than 550 jiW when deselected • Byte-wide memory organization

Contextual Info: CY27C256 y CYPRESS 32K x 8-Bit CMOS EPROM into a low-power stand-by mode. The CY27C256 is packaged in the industry standard 600-mil DIP, PLCC, and TSO P packages. T he CY27C256 is also available in a C erD IP package equipped with an erasure window to provide for reprogram ­

IC 368

Contextual Info: ¡ E P I T A X I A L TO-92B BC 368 NPN and BC 369 (PNP) are complementary silicon epitaxial transistors for audio frequency application. ABSOLUTE MAXIMUM RATINGS ECB 1A Collector Current-Continuous CEO 20V Emitter-Base Voltage VEBO 5V Total Power Dissipation

27C010A

Contextual Info: CYPRESS CY27C010 ADVANCED INFORMATION 128K x 8 CMOS EPROM Features Functional Description • CMOS for optimum speed/power • High speed — tAA - 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

Contextual Info: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

27C64 8k EPROM

Abstract: eprom 27c64 27C64 27C64-20 7258 P15 Package CY27C64 CY7C266 200JC
Contextual Info: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

gy-27

Abstract: 27C010 27C010-70 CY27C010 27C010-90 600-MIL ScansUX33
Contextual Info: s ï«r W CYPRESS Features • CMOS for optimum speed/power • High speed — *AA = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization' • 100% reprogrammable in the windowed package • EPROM technology

27C512

Abstract: CY27C512 CY27C512-150WC 27C512-70
Contextual Info: ¥ CYPRESS Features • C M O S for optim um speed/pow er • High speed — tAA = 70 n s max. Low power • — 220 m W m ax. — L ess than 85 mW w hen d eselected • Byte-w ide m em ory organization • 100% reprogram m able in the w indow ed package •

SN7441N

Abstract: SN7401 SN530 SN7311 SN510A SN51UB SN15851 advantages of master slave jk flip flop SN-7441N SN5301
Contextual Info: Sem iconductors and Comjpdiients Data Book 2 Digital Integrated C ircuits Copyright 1966 by Texas Instruments Limited. 'All Rights Reserved. Printed in the United Kingdom. This book, or parts thereof, may not be reproduced in any form without permission of the publisher, Texas Instruments

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK