150E3 Search Results

150e-3

Abstract: bf 494 transistor ZTX1149A
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997 FEATURES * VCEO = - 25V * 3 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

230/12 volt potential transformer

Abstract: 8NLE2-200E MIL-C-85049 1E4PT2.4 2E4PT2.4 125E-2C-15.5 400E-2C-2.75 80E-1C-5.5 LCT.5E
Contextual Info: Medium Voltage Fuses Medium Voltage Fuses 2,400 - 38,000 VAC • Current-Limiting Current-limiting “E” and “R” rated fuses are equipped with a mechanical indicator or striker pin that protrudes through the fuse cap upon operation of the fuse. This

Contextual Info: POWR-GARD Fuse Datasheet MEDIUM VOLTAGE FUSES 2,400-38,000 VAC • Current-Limiting Current-limiting E- and R-rated fuses are equipped with a mechanical indicator or striker pin that protrudes through the fuse cap upon operation of the fuse. This provides visual identification

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT11*9A ISSUE 1 - JANUARY - FEATURES * * VCEO=-25V 4 Am p Continuous Current * * 10 A m p Pulse Current Low Saturation voltage * High Gain ABSOLUTE MAXIMUM RATINGS.

m 7106

Abstract: R1019
Contextual Info: VITESSE VSC7105/7106 Data Sheet 1.0625 Gbit/sec Transmitter/Receiver Chipset for Fibre Channel or Proprietary Serial Links • ANSI X3T11 Fibre Channel Compatible at 1.0625 Gbit/s • On-chip Fully Monolithic Clock Recovery and Clock Multiplication Circuits Require

Contextual Info: MITSUBISHI IGBT MODULES 150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: M itsubishi IGBT M odules are d e ­ signed fo r use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di­

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

25TN2H

Abstract: ME501210 800HB E501606 M6AB 1200HB-66H 57959L E50081 20CSJ060 30CSJ060
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 n _ i j ] _ s i _ h A E Dim. Inches Millimeters Dim. Inches Millimeters Dim. Inches 0.79 20.0 A 1.54 Max. 39.0 Max. B 0.61 15.6 B 1,268±0.008

mcl d01 94V0

Abstract: mcl d01 94vo lcd nec 2501 LD 229 TY 8016 thyristor LNNB001 mcl d01 display mcl d01 94VO 4300 MCL D01 94VO LCD DISPLAY FREE Bucket Elevator Design NH3 GL-GG
Contextual Info: POWR-GARD PRODUCTS CATALOG Littelfuse The World’s Leading Provider of Circuit Protection Solutions An Exceptional Portfolio Littelfuse is committed to providing every one of our customers with the right solutions to meet all of your circuit protection needs. Makes All the Difference

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 1 14 9 A ISSUE 1 - January 1997_ • - - FEATURES * V =- 25V CEO * * * * ° 3 A m p Continuous Current 10 Am p Pulse Current Low Saturation Voltage High Gain

TRANSISTOR SE 135

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997_ ~ FEATURES * V CEO = -2 5 V * 3 A m p C o n tin u o u s C u rre n t * 10 A m p Pulse C u rre n t * L o w S a tu ra tio n V o lta g e

48-FM-18R-5G

Abstract: 218A-4293-P6RB 55A213937P800B 48FM18R-5G FC467-1E 218A4293P18RB 218A4293P4RB 55A212942P9RB 55A212942P6RB 151D241G04
Contextual Info: MEDIUM VOLTAGE FUSE CATALOG Innovation in Circuit Protection Littelfuse Worldwide World Headquarters: • Littelfuse, Inc. 800 East Northwest Highway Des Plaines, IL 60016 USA Phone: +1 847 824-1188 http://www.littelfuse.com Littelfuse is an international corporation

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1149A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

FZT1149A

Abstract: DSA003675
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1149A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

Contextual Info: MITSUBISHI IGBT MODULES 150E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­

Contextual Info: MITSUBISHI IGBT MODULES 150E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di­

Contextual Info: Prelim inary Data Sheet ATM/SONET/SDH 155/622 Mb/s Transceiver Mux/Demux with Integrated Clock Generation VSC8111 Features Operates at Either STS-3/STM-1 155.52 Mb/s or STS-12/STM-4 (622.08 Mb/s) Data Rates Compatible with Industry ATM UNI Devices On Chip Clock Generation of the 155.52 Mhz

Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advanced Product Information Quad Port Bypass Circuit for 1.0625 Gbit/sec Fibre Channel Arbitrated Loop Disk Arrays VSC7122 Features Supports ANSI X 3T11 1.0625 Gbit/sec FC-AL D isk Attach for Resiliency • TTL Bypass Select

Contextual Info: ZTX1049A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES • VCEV = 80V • Very low saturation voltages • High gain • 20 amps pulse current APPLICATIONS • LCD backlight converters E-Line • Emergency lighting • DC-DC converters PINOUT

600HU

Abstract: GE 047 TRANSISTOR transistor nf 37 150DU12H 100DU-12H
Contextual Info: m N EREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 HIGH PERFORMANCE U-SERIES IG BTM O D TRANSISTOR POWER MODULES Major R atings and Characteristics at Tc = 25 C (T¡ M axim um = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISES

BF520

Abstract: ZTX1049A NPN Transistor VCEO 80V 100V TS16949 ZTX1149A transistor bf 494 ZTX114
Contextual Info: ZTX1049A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES • VCEV = 80V • Very low saturation voltages • High gain • 20 amps pulse current APPLICATIONS • LCD backlight converters E-Line • Emergency lighting • DC-DC converters PINOUT

1E4PT2.4

Abstract: 2E4PT2.4 1E11PT15.5 65E1C8.25 550-30R-2C-5.5 40E-1C-5.5
Contextual Info: POWR-GARD Fuses—Medium Voltage MEDIUM VOLTAGE FUSES 2,400-38,000 VAC • Current-Limiting Current-limiting E- and R-rated fuses are equipped with a mechanical indicator or striker pin that protrudes through the fuse cap upon operation of the fuse. This

CM150E3Y-24E

Abstract: cm150e3y CM150E3Y-24 igbt transistor igbt dc to dc chopper control cm150e3y24e
Contextual Info: 150E3Y-24E P o w e r e x , Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Chopper IGBTMOD E-Series Module 150 Amperes/1200 Volts Description: 150E3Y-24E Chopper IGBTMOD™ E-Series Module 150 Amperes/1200 Volts Powerex Chopper IGBTMOD™