150 WATTS POWER AMPLIFIER CIRCUIT Search Results

J293

Contextual Info: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s

Hytron

Abstract: HY31B HY51B HYTRONIC HY31
Contextual Info: 2-38 Type Engineering Bulletin 5 1 - 1 H Y51A-H Y51B y PHYSICAL DATA Plate Grid Filament Insulation Base Plate Lead Max. Overall Length Max. Diameter Bulb Net Weight Processed Graphite Molybdenum-Nlokel Thorlated Tungsten Processed Lava 4 Pin UX Iso. Large Metal Cap

120S1G3M3

Contextual Info: MODEL 120S1G3 M1, M2, M3, M4 120 WATTS CW 0.8 – 3.0 GHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 120S1G3 is a portable, self-contained, air-cooled, broadband, completely solid-state amplifier designed for

6146 tube

Abstract: tube 6146 6146 6146 tubes 400w audio amplifier 6146+tubes
Contextual Info: 6146 VHF BEAM POWER AMPLIFIER GENERAL DATA Electrical : Heater, for Unipotential Cathode: Voltage. 6.3 ± 10$ Current.1.25 . . Transconductance, f o r p i a t e volts = 200 , gria-No.2 volts = 2 0 0 , a n d p l a t e ma. * 10 0 .

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage

20KT

Abstract: KIA8246H KIA8256H 100 watts IC audio amplifier circuit diagram
Contextual Info: KE C SEMICONDUCTOR TECHNICAL DATA " KIA8256H BIPOLAR LINEAR INTEGRATED CIRCUIT THREE AUDIO POWER AMPLIFIER The KIA8256H is 3 channel audio power amplifier for consumer applications. This IC provides an output power of 6 watts per channel at Vcc=20V, f=lkHz, THD=0%, RL=8^

Contextual Info: Data Sheet 150V Input Mini Family DC-DC Converter Module Features • DC input range: 100 – 200 V • Isolated output • Encapsulated circuitry for shock and vibration resistance • Extended temperature range • • • • • • • • • • •

Contextual Info: 3C/I50-A Standard Valves— VALVE TYPE 3C/I50-A H IGH FR E Q U E N C Y TRIO DE. SPECIFICATION. Cathode. Thoriated tungsten filament. Constant voltage type. Dimensions. Maximum overall length 9 $ " 25-2 cm. Bulb diameter 2-83" (7-2 cm.) Net weight 0-7 lbs. (320 gms.)

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

MRF136

Abstract: mrf136y amplifier 18006-1-Q1 class A push pull power amplifier mrf136y design rf push pull mosfet power amplifier zener motorola 1N4740 1N5925A 319B
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up

power transistor audio amplifier 500 watts circuit diagram

Abstract: LM1875 10w audio amplifier circuit diagram layout down 50 watts stereo power amplifier diagram 600 watts amplifier circuit diagram with specific w06c
Contextual Info: LM1875 20W Audio Power Amplifier General Description Features The LM1875 is a monolithic power amplifier offering very low distortion and high quality performance for consumer audio applications. The LM1875 delivers 20 watts into a 4Ω or 8Ω load on ± 25V

MRF5003

Abstract: "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF5003/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5003 N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

j687

Abstract: MRF323 VK200 case 244-04
Contextual Info: Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

CRCW08051000FKTA

Abstract: MHV5IC2215N J088 TAJA105K035R 01145 A113 A114 A115 AN1955 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage 28 Volts LDMOS IC

transistor MRF321

Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Contextual Info: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

mrf1535

Abstract: TRIMMER capacitor AN721 MRF1535FNT1 MRF1535N MRF1535NT1 VK200 A05T A113 AN211A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 10, 9/2006 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

Contextual Info: Document Number: MHVIC2114R2 Rev. 4, 8/2006 Freescale Semiconductor Technical Data Replaced by MHVIC2114NR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHVIC2114R2 The MHVIC2114R2 wideband integrated circuit is designed for base station

Contextual Info: Low Cost, Dual/Triple Video Amplifiers AD8072/AD8073 a PIN CONFIGURATIONS 8-Lead Plastic N , SOIC (R), and ␮SOIC (RM) Packages Both will operate from a single 5 V to 12 V power supply. The outputs of each amplifier swing to within 1.3 volts of either supply rail to accommodate video signals on a single 5 V supply.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 8, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

MRF392

Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

MRF321

Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321
Contextual Info: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

MJE371

Abstract: MJE521 TO-225AA MJE-371
Contextual Info: ON Semiconductor MJE371 Plastic Medium-Power PNP Silicon Transistors 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers

cr 4180 r4

Abstract: Nippon capacitors
Contextual Info: M O TO R O LA Order this document by MRFIC0913/D SEM ICO N DUCTO R TECHNICAL DATA The M RFIC Line M R F IC 0 9 13 900 M H z G a A s Integrated Pow er Am plifier This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.8 watts output power and 48% minimum power added efficiency

Contextual Info: Common Source Push-Pull Pair ARF475FL D G S S G RF POWER MOSFET S S D N - CHANNEL PUSH - PULL PAIR 165V 450W 150MHz The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.