14NM Search Results

D204B

Abstract: 3500mV Fresnel lens human body temperature detection sensor application of chopper amplifier 11141
Contextual Info: a Standard S pecifications an d 'D im e n sio n s wwuv.rl>innpH<i.np Recom m ended Model D204B Encapsulation Type TO-5 IR K e c e iv in g Electrode 2x1 mm, 2 elem ents W ind ow Size 5 x 3 .8mm Spectral Response 5-14nm T ransm ittance ^75% Signal O utput Vp-p]

memoire

Abstract: RAM EDAC SEU 350Krad
Contextual Info: 0.6µm CMOS TECHNOLOGY WITH RADIATION TOLERANT FEATURES APPLICATION TO 8Kx16 DUAL PORT RAM and SEA of GATES TECHNOLOGIE CMOS 0.6µm TOLERANTE AUX RADIATIONS APPLICATION A LA MEMOIRE DOUBLE ACCES 8Kx16 ET AUX MERS DE PORTES by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Saïd HACHAD 1

DG308A

Abstract: dg3091 DG308AB DG309 DG309A DG309B JV35
Contextual Info: -,=s- o n sp s t cm o s 7 t o ^ ' •x -i -, H (o #) o S ilic o n ix - 1 5 V , G N D — 0, T a = 25X :> (V' =15V , V ìi *1SV y». 1 ^4, v/iaìx; _ 4 d — 1 -¿•6*0 > ° f Ci 1 p ^nsoN' - i i-isv " ft DG308A A / DG309A DG308AB.C DG309B.C Ai 'h kì K

Axon TWINAX

Abstract: Souriau 831 8630-07A 8630-06A Souriau 8630 Axon 3902 SCC 3401 005 07B Axon Cable P5 12296 8630-07 8949
Contextual Info: Mounting option Dimensions Float mounting 3401 001, 3401 002, D*MF, 8631 & 8635F Not available for savers connectors Engagement view Male connectors Female connectors Mounting with clinch nuts (O & L, D*M, 8630 & 8635) (E for 3401001 and 3401002 series)

sbsgp

Abstract: ceramic disc 104 aec capacitors MIL-C-83513 Tubular Pi type capacitor military passive component SFssc AEC-Q200 BEADS FILTER semiconductor metal oxide varistor EN132400 varistor far 10k 150 AN0018
Contextual Info: Surface mount EMI filters Panel mount EMI filters Hermetic panel mount EMI filters EMI Power filters Special filters and assemblies Planar arrays Discoidal multilayer capacitors Varistor filters X2Y - Integrated Passive devices Filters for High-Rel applications

12 key

Abstract: en1088 Rotary Switch 5 ways AS4024 ISO12100-1 ISO14119 440T
Contextual Info: Prosafe Trapped Key Interlock Switches Exchange Units Specifications Standards Category Approvals Operating Temperature Mechanical Operations Max. Shear Force to Key Max. Torque to Key Humidity Material EN292-1&2, EN1088, ISO12100-1&2, ISO14119, AS4024.1 Cat. 1 per EN 954-1 ISO 13849-1

INTERLOCK VALVE

Abstract: BALL VALVE DATA SHEET BALL VALVE en1088 valve interlock ball valve interlock AS4024 ISO12100-1 ISO14119 valve
Contextual Info: Prosafe Trapped Key Interlock Switches Miniature Valve Interlocks Specifications Standards Approvals Ambient Temperature Mechanical Operations Maximum Shear Force to Key Maximum Torque to Key Relative Operating Humidity Material EN292-1&2, EN1088, ISO12100-1&2,

SIO2

Abstract: M5M51008B M5M5V108C
Contextual Info: Technological Comparison Table between M5M51008B* and M5M5V108C Circuit Memory Cell Peripheral Circuit M5M51008B High Resistance Type CMOS M5M5V108C TFT Load Type CMOS Process Wafer Process Design Rule Gate Oxide Transistor Type Word Line Bit Line M5M51008B

Contextual Info: Filter Type Metallised Film Feedthrough EMI Filter Datasheet SLM* M25 Thread : 27mmA/F : M6 Spindle Metallised Film Self-Healing 100A Circuit Configuration Electrical Details Electrical Configuration Current Rating Voltage Rating Insulation Resistance (IR)

cmos transistor 0.35 um

Abstract: XH035 xh03 CMOS Process Family nmos transistor 0.35 um analog hv 102 Ultrasonic Piezoelectric poly silicon resistor inkjet module power mos transistor selection
Contextual Info: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XH035 Analog, RF and 100V High Voltage Options with Non Volatile Memory Modular 0.35 µm CMOS process with 4 different process cores for analog/mixed-signal and high voltage applications. Modules Overview

XH035

Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target

14nm65n

Abstract: STB14NM65N N-channel MOSFET to-247 STW14NM65N W14NM65N 14NM65 JESD97 STF14NM65N STI14NM65N STP14NM65N
Contextual Info: 14NM65N, 14NM65N 14NM65N,14NM65N,14NM65N N-channel 650 V, 0.33 Ω, 12 A MDmesh II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features Type VDSS @TJmax RDS(on) max ID 14NM65N 710 V < 0.38 Ω 12 A 14NM65N 710 V < 0.38 Ω

Contextual Info: Filters FN 761X AC Feedthrough Filter IEC/EN 60939 approval Rated currents from 10 to 250A Approvals 5kV pulse test capability Class Y2 capacitor Technical specifications Capacitor class: Flammability corresponding to: High potential test voltage: Insulation resistance 100VDC after 60

7612-63-M6

Abstract: m27x1
Contextual Info: Feedthrough components FN 761X AC feedthrough filter n EN/IEC 60939 approval Rated currents from 10 to 250A n 5kV pulse test capability n Class Y2 capacitor Approvals n Technical specifications Maximum continuous operating voltage: Rated currents: Capacitor class:

Contextual Info: Filter Type Metallised Film Feedthrough EMI Filter Datasheet SLVR* M24 Thread : 38mm Round Head : M10 Spindle Metallised Film Self-Healing 200A Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Voltage Rating

Contextual Info: Filter Type Metallised Film Feedthrough EMI Filter Datasheet SLVR* M24 Thread : 38mm Round Head : M10 Spindle Metallised Film Self-Healing 200A Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Voltage Rating

14NM50N

Abstract: STD14NM50N TL 139 H 48-1-A G 0275B0 STF14NM50N Part Marking TO-220 STMicroelectronics STB14NM50N STP14NM50N 14NM50N MOSFET
Contextual Info: 14NM50N, 14NM50N 14NM50N, 14NM50N N-channel 500 V, 0.246 Ω, 12 A MDmesh II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Preliminary data Features VDSS @ TJmax Type 14NM50N 14NM50N 14NM50N 14NM50N RDS on max ID 3 1 3 DPAK 550 V

EN1088

Abstract: AS4024 ISO12100-1 ISO14119 4-40T
Contextual Info: Prosafe Trapped Key Interlock Switches Access/Chain Interlocks Specifications Standards Category Approvals Single Dual Description The access interlocks are designed to allow access to hazardous areas when an appropriate key is inserted into the interlock. These access

a2714

Abstract: GuardMaster 440G GuardMaster 440G-A27143 440g a27011 440K AS4024 EN1088 ISO12100-1 ISO14119
Contextual Info: Prosafe Trapped Key Interlock Switches Slamlock Electrical Specifications Standards Single Dual Description The Prosafe Slamlock with electrical isolation combines the features of trapped key tongue actuated interlocks while also providing sets of electrical safety and auxiliary contacts. When the actuator is

MPB19

Contextual Info: LIGHT TYPE Application Industrial remote controller Medical / Communication 適用於工控產品/醫療/通訊 Mounting hole size: Ø19mm Contact configuration: 1NO 1NC / 2NO 2NC Operating type: Momentary / Self-locking Light type: Without LED SPECIFICATIONS

VLSI Technology

Abstract: "vlsi technology" abstract "vlsi technology" abstract for 35CL inverter grade SCR solar 4V led RADEC
Contextual Info: Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)

Contextual Info: 14NM50N, 14NM50N, 14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages Datasheet - production data Features Order codes 2 14NM50N TO-220FP TAB RDS on max ID 550 V 0.32 Ω 12 A 14NM50N

14NM50N

Abstract: 14nm5 STF14NM50N STD14NM50N STP14NM50N 14nm50 14NM50N MOSFET 16832 STB14NM50N
Contextual Info: 14NM50N, 14NM50N 14NM50N, 14NM50N N-channel 500 V, 0.28 Ω, 12 A MDmeshTM II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Features VDSS @ TJmax Type 14NM50N 14NM50N 14NM50N 14NM50N RDS on max ID 3 1 3 DPAK 550 V < 0.32 Ω •

"vlsi technology" abstract for

Abstract: "vlsi technology" abstract
Contextual Info: Hardening CMOS Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)