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    d634

    Abstract: d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634
    Text: 2s d 633 s /' J j y N P N = s m * w ? - 1j y h y ^ y v ? •SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR 2 S D 634 2s d O X % t> X 4 O '' y o Power o Hammer • H igh 635 7 > 7 — F 7 -t 7’ , Sw itching D rive, P ulse DC C u r r e n t Low C ollector


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    2SD634, 2SD633, 2SD635 d634 d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634 PDF

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    Abstract: No abstract text available
    Text: ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted Storage Temperature.— 55° Cto + 1 5 0 ° C Operating Temperature.— 55° Cto + 1 0 0 ° C Lead Soldering Temperature (1 /1 6 inch (1 • 6 mm) from case for 10 seconds). .2 6 0 ° C


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